December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units -30 V 20 V 7.5 A 20 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG S TA = 25C unless otherwise noted - Pulsed PD G Operating and Storage Temperature Range W 1.1 -65 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 12 C/W (c) 1998 Fairchild Semiconductor Corporation NDT456P Rev. F Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V V TJ = 55C -1 A -10 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA -3 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 A RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A -1 TJ = 125C -0.5 TJ = 125C VGS = - 4.5 V, ID = -6 A -1.5 -1.1 -2.6 0.026 0.03 0.035 0.054 0.041 0.045 ID(on) On-State Drain Current VGS = -10 V , VDS = - 5 V -20 A VGS = -4.5 V, VDS = - 5 V -10 Gfs Forward Transconductance VGS = -10 V, ID = -7.5 A 13 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 1440 pF 905 pF 355 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, ID = -7 A, VGEN = -10 V, RGEN = 12 VDS = -10 V, ID = -7.5 A, VGS = -10 V 10 20 ns 65 120 ns 70 130 ns 70 130 ns 47 67 nC 5 nC 12 nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min Typ Max Units -2.5 A -1.2 V 140 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 2.5 A trr Reverse Recovery Time VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/s Notes: 1. P D (t) = T J -T A R JA (t) = T J -T A R JC +R CA (t) = I 2D (t) x R DS(ON)@T J - 0.85 (Note 2) RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RJA is found to be: a. 42oC when mounted on a 1 in2 pad of 2oz copper. b. 95oC when mounted on a 0.066in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDT456P Rev. F Typical Electrical Characteristics -6.0 -5.0 -3.5 R DS(on) , NORMALIZED -16 2.5 -4.5 -4.0 VGS = -10V -12 -3.0 -8 -4 -2.5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) -20 0 0 -1 V DS -2 V GS=-3.5V 2 -4.0 -4.5 1.5 -7.0 0.5 -3 0 -4 -8 , DRAIN-SOURCE VOLTAGE (V) -20 V R DS(on) , NORMALIZED 1 .2 5 = -10V GS 1 0 .7 5 DRAIN-SOURCE ON-RESISTANCE 2.5 0 .5 -50 VGS = -10V 2 25C 1 -55C 0.5 0 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) 125 TJ = 125C 1.5 150 0 -4 -8 -12 -16 -20 I D , DRAIN CURRENT (A) J Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. T = -55C 25 J VDS =- 10V 125 V GS(th) , NORMALIZED -16 -12 D -8 -4 0 -0.8 -1.6 V GS -2.4 -3.2 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -4 GATE-SOURCE THRESHOLD VOLTAGE 1.2 -20 , DRAIN CURRENT (A) -16 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. I D =-7.5A I -12 I D , DRAIN CURRENT (A) 1 .5 R DS(ON), NORMALIZED -10 1 Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE -5.0 VDS = VGS I D =- 250A 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEM PERATURE (C) 125 150 J Figure 6. Gate Threshold Variation with Temperature. NDT456P Rev. F Typical Electrical Characteristics 20 -IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1 .1 I D =- 250A 1 .0 8 1 .0 6 1 .0 4 1 .0 2 1 0 .9 8 0 .9 6 0 .9 4 -5 0 -2 5 0 T J 25 50 75 100 , JU N CTION T EM PERA T U RE (C) 125 150 V GS = 0V 5 -55C 0.01 0.001 0.0001 0 0.2 -V SD 0.4 10 -VGS , GATE-SOURCE VOLTAGE (V) 3000 2000 Ciss Coss 1000 Crss 300 f = 1 MHz VGS = 0V 200 0.1 0.2 0.5 1 2 5 10 20 30 8 R GEN 6 4 2 0 0 10 20 30 40 50 60 Figure 10. Gate Charge Characteristics. t on t d(on) RL t off tr t d(off) tf 90% 90% V OUT VOUT DUT G 1.2 -20V -VDD D 1 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. V IN 0.8 VDS =- 5V -10V I D = -7.5A VDS , DRAIN TO SOURCE VOLTAGE (V) VGS 0.6 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 4000 CAPACITANCE (pF) 25C 0.1 Figure 7. Breakdown Voltage Variation with Temperature. 500 400 TJ = 125C 1 10% 10% 90% S V IN 50% 50% 10% PULSE W IDTH Figure 11. Switching Test Circuit. INVERTED Figure 12. Switching Waveforms. NDT456P Rev. F 3 .5 18 STEADY-STATE POWER DISSIPATION (W) VDS = -5V TJ = -55C 15 25C 12 125C 9 6 3 g FS , TRANSCONDUCTANCE (SIEMENS) Typical Thermal Characteristics 0 0 -2 -4 -6 -8 1a 3 2 .5 2 1 .5 1b 1c 1 4.5"x5" FR-4 Board o TA = 25 C Still Air 0 .5 0 -10 0 .2 0 .4 0 .6 0 .8 2 o z COPPER M O U N T ING PAD AREA (in 2 ) 1 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. SOT-223 Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 10 40 20 8 1a 6 1b 1c 4 4.5"x5" FR-4 Board o TA = 25 C Still Air VGS = -10V 2 0 0 0.2 0.4 0.6 0.8 -ID , DRAIN CURRENT (A) -ID , STEADY-STATE DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 10 R N) LIM IT 10m s 100 ms 1s 10s DC 1 0.3 0.1 VGS = -10V SINGLE PULSE RJA = See Note 1c TA = 25C 0.01 0.1 0.2 0.5 2oz COPPER MOUNTING PAD AREA (in2 ) Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 100 us 1m s 3 0.03 1 (O DS 1 2 5 10 30 50 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 16. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0 .2 0 .1 0 .1 0 .05 0 .0 5 0 .02 0 .0 2 0 .01 R (t) = r(t) * R JA JA R JA = See Note 1 c P(p k) 0 .0 1 t1 0 .0 0 5 Single Pulse 0 .0 0 2 0 .0 0 1 0 .0 0 0 1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0 .0 0 1 0 .01 0 .1 t 1 , TIM E (sec) 1 10 100 300 Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT456P Rev. F SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F852 014 F852 014 F852 014 F852 014 SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no flow code) TNR 2,500 D84Z SOT-223 Unit Orientation TNR 500 13" Dia 7" Dia 343x64x343 184x187x47 Max qty per Box 5,000 1,000 Weight per unit (gm) 0.1246 0.1246 Weight per Reel (kg) 0.7250 0.1532 343mm x 342mm x 64mm Intermediate box for Standard F63TNR Label Note/Comments F63TNR Label F63TNR Label sample 184mm x 184mm x 47mm Pizza Box for D84Z Option SOT-223 Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 3000 FSID: PN2222A SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets September 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOT-223 (12mm) A0 6.83 +/-0.10 B0 7.42 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 1.50 +/-0.10 E1 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 1.88 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.292 +/0.0130 9.5 +/-0.025 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOT-223 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. B SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47) 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.