LED Product Line LOW CURRENT GaN LEDs Peak Wavelength (nm) Brightness (mW) Min C430-CB230-E1000 Typ .425 .650 Color Blue Forward Voltage Min Typ Max Typ Max 426 428 430 4.0 4.5 ESD Rating Dimensions Class II See Fig. 1 ESD Rating Dimensions All measurements taken at 10mA. LOW CURRENT InGaN LEDs Brightness (mW) Min Typ C460-CB230-E1000 1.0 1.3 C470-CB230-E1000 1.0 C525-CB230-E1000 Dominant Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max Deep Blue 455 460 465 3.5 3.7 Class II See Fig. 1 1.3 Blue 465 470 475 3.5 3.7 Class II See Fig. 1 .500 .650 Green 520 525 535 3.5 3.7 Class II See Fig. 1 ESD Rating Dimensions Class II See Fig. 2 ESD Rating Dimensions All measurements taken at 10mA. STANDARD BRIGHTNESS LEDs Brightness (mW) C430-CB290-E1000 Min Typ .850 1.1 Peak Wavelength (nm) Color Blue Forward Voltage Min Typ Max Typ Max 426 428 430 4.0 4.5 All measurements taken at 20mA. SUPERBRIGHTTM InGaN LEDs Brightness (mW) Min Typ C450-CB290-E1000 2.5 3.5 C460-CB290-E1000 2.0 C470-CB290-E1000 Dominant Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max Deep Blue 445 450 455 3.3 3.7 Class II See Fig. 2 3.0 Deep Blue 455 460 465 3.3 3.7 Class II See Fig. 2 2.0 2.5 Blue 465 470 475 3.3 3.7 Class II See Fig. 2 C490-CB290-E1000 2.0 2.5 Aqua Blue 485 490 495 3.3 3.7 Class II See Fig. 2 C505-CB290-E1000 1.5 2.0 Traffic Green 500 505 510 3.3 3.7 Class II See Fig. 2 C525-CB290-E1000 1.0 1.5 Green 520 525 535 3.3 3.7 Class II See Fig. 2 All measurements taken at 20mA. ULTRABRIGHTTM GaN LEDs CPR3AX Rev. D (c) Cree, Inc. 2001-02 All Rights Reserved. Tel: 919-313-5300 * Fax: 919-313-5451 www.cree.com Brightness (mW) C430-UB290-E1000 Min Typ 1.4 2.0 Peak Wavelength (nm) Color Blue Forward Voltage Min Typ Max Typ Max 426 428 430 4.2 4.7 ESD Rating Dimensions Class II See Fig. 3 ESD Rating Dimensions All measurements taken at 20mA. ULTRABRIGHTTM InGaN LEDs Brightness (mW) Min Typ C460-UB290-E1000 3.8 5.5 C460-UB291-E1000 3.8 C470-UB290-E1000 Dominant Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max Deep Blue 455 460 465 3.5 3.9 Class II See Fig. 3 5.5 Deep Blue 455 460 465 3.5 3.9 Class II See Fig. 2 3.4 5.0 Blue 465 470 475 3.5 3.9 Class II See Fig. 3 C470-UB291-E1000 3.4 5.0 Blue 465 470 475 3.5 3.9 Class II See Fig. 2 C490-UB290-E1000 3.3 4.8 Aqua Blue 485 490 495 3.5 3.9 Class II See Fig. 3 C505-UB290-E1000 2.5 3.5 Traffic Green 500 505 510 3.5 3.9 Class II See Fig. 3 C525-UB290-E1000 1.7 3.0 Green 520 525 535 3.5 3.9 Class II See Fig. 3 ESD Rating Dimensions All measurements taken at 20mA. MEGABRIGHTTM InGaN LEDs Brightness (mW) Min Typ C460-MB290-E1000 8.0 11.0 C470-MB290-E1000 7.5 C503-MB290-E1000 Dominant Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max Deep Blue 455 460 465 3.7 4.0 Class II See Fig. 3 10.0 Blue 465 470 475 3.7 4.0 Class II See Fig. 3 6.0 8.0 Traffic Green 498 503 508 3.8 4.0 Class II See Fig. 3 C505-MB290-E1000 6.0 8.0 Traffic Green 500 505 510 3.8 4.0 Class II See Fig. 3 C527-MB290-E1000 5.0 7.0 Green 520 525 535 3.8 4.0 Class II See Fig. 3 All measurements taken at 20mA. CPR3AX Rev. D (c) Cree, Inc. 2001-02 All Rights Reserved. Tel: 919-313-5300 * Fax: 919-313-5451 www.cree.com MEGABRIGHTTM UltraViolet InGaN LEDs Brightness (mW) Peak Wavelength (nm) Color Forward Voltage ESD Rating Dimensions 4.0 Class I See Fig. 3 3.7 4.0 Class I See Fig. 3 3.7 4.0 Class I See Fig. 3 Min Typ Max Typ Max UV 390 395 400 3.7 10.0 12.0 UV 390 400 410 10.0 12.0 UV 400 405 410 Min Typ C395-MB290-E400 9.0 11.0 C400-MB290-E400 C405-MB290-E400 All measurements taken at 20mA. XBRIGHTTM InGaN LEDs Brightness (mW) Min Typ Dominant Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max ESD Dimensions Rating C460-XB290-E1000-A C460-XB290-E1000-B 11.0 15.0 Deep Blue 455 460 465 3.7 4.0 Class II See Fig. 4 C470-XB290-E1000-A C470-XB290-E1000-B 11.0 14.0 Blue 465 470 475 3.7 4.0 Class II See Fig. 4 C505-XB290-E1000-A C505-XB290-E1000-B 8.5 11.0 Traffic Green 500 505 510 3.8 4.0 Class II See Fig. 4 C527-XB290-E1000-A C527-XB290-E1000-B 7.0 9.0 Green 520 527 535 3.8 4.0 Class II See Fig. 4 All measurements taken at 20mA. "-A" XB LEDs feature Au/Sn backside metalization. "-B" XB LEDs feature Au backside metalization. XBRIGHTTM UltraViolet InGaN LEDs Brightness (mW) Min Typ Peak Wavelength (nm) Color Forward Voltage Min Typ Max Typ Max ESD Rating Dimensions C395-XB290-E400-A C395-XB290-E400-B 13.0 16.0 UV 390 395 400 3.7 4.0 Class I See Fig. 4 C405-XB290-E400-A C405-XB290-E400-B 14.0 17.0 UV 400 405 410 3.7 4.0 Class I See Fig. 4 All measurements taken at 20mA. "-A" XB LEDs feature Au/Sn backside metalization. "-B" XB LEDs feature Au backside metalization. CPR3AX Rev. D (c) Cree, Inc. 2001-02 All Rights Reserved. Tel: 919-313-5300 * Fax: 919-313-5451 www.cree.com XBRIGHTTM 900 Power ChipTM LEDs Brightness (mW) Min C470-XB900-A C470-XB900-B Typ TBD 150 Dominant Wavelength (nm) Color Blue Forward Voltage Min Typ Max Typ Max 465 470 475 3.7 4.0 Dimensions See Fig. 5 All measurements taken at 350mA. "-A" XB LEDs feature Au/Sn backside metalization. "-B" XB LEDs feature Au backside metalization. XBRIGHTTM 900 UltraViolet Power ChipTM LEDs Brightness (mW) Min C405-XB900-A C405-XB900-B Typ Peak Wavelength (nm) Color TBD 250 UV Forward Voltage Min Typ Max Typ Max 400 405 410 3.7 4.0 Dimensions See Fig. 5 All measurements taken at 350mA. "-A" XB LEDs feature Au/Sn backside metalization. "-B" XB LEDs feature Au backside metalization. Fig. 1 Topside View - CB230 Die Cross Section Bottom View G * SiC(R) LED Chip 200 x 200 m Anode (+) h = 250 m Mesa (junction) 175 x 175 m GaN/InGaN SiC Substrate Backside Metallization Gold Bond Pad 120 m Diameter h Cathode (-) Fig. 2 Topside View - CB290 and UB291 G * SiC(R) LED Chip 300 x 300 m Mesa (junction) 240 x 240 m Gold Bond Pad 120 m Diameter CPR3AX Rev. D (c) Cree, Inc. 2001-02 All Rights Reserved. Die Cross Section Bottom View Anode (+) h = 250 m GaN/InGaN Backside Metallization SiC Substrate h Cathode (-) Tel: 919-313-5300 * Fax: 919-313-5451 www.cree.com Fig. 3 Bottom View Topside View - UB290 and MB290 G * SiC(R) LED Chip 300 x 300 m Mesa (junction) 240 x 240 m Die Cross Section Anode (+) h = 250 m GaN/InGaN Backside Metallization Gold Bond Pad 120 m Diameter SiC Substrate Cathode (-) Fig. 4 Bottom View Topside View G * SiC(R) LED Chip 300 x 300 m Die Cross Section Cathode (-) Junction Area 248 x 248 m Top Area 200 x 200 m h = 250 m Backside Metallization 220 x 220 m Gold Bond Pad 96 m Diameter SiC Substrate InGaN Anode (+) Fig. 5 Topside View - Power ChipTM G-SiC LED Chip Bottom View Junction Area 845 x 845 m Die Cross Section 900 x 900 m Width = 30 m Bond Pad 120 m Diameter CPR3AX Rev. D (c) Cree, Inc. 2001-02 All Rights Reserved. Backside Metallization Anode (+) Cathode (-) SiC Substrate h = 250 m InGaN Tel: 919-313-5300 * Fax: 919-313-5451 www.cree.com