MRFE6S9045NR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with fre-
quencies up to 1000 MHz. The high gain and broadband performance of this
device makes it ideal for large-signal, common - source amplifier applications
in 28 volt base station equipment.
•Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.1 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth
•Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,
Pout = 16 Watts Avg., Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
•Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,
Full Frequency Band (920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Integrated ESD Protection
•225°C Capable Plastic Package
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +66 Vdc
Gate- Source Voltage VGS - 0.5, + 12 Vdc
Maximum Operation Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.0
1.1
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFE6S9045N
Rev. 0, 10/2007
Freescale Semiconductor
Technical Data
880 MHz, 10 W AVG., 28 V
SINGLE N-CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO-270-2
PLASTIC
MRFE6S9045NR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 3A (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22- A113, IPC/JEDEC J- STD -020 3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 10 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µA)
VGS(th) 1 2 3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
VDS(on) 0.05 0.23 0.3 Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.02 — pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 27 — pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 81 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg., f = 880 MHz, Single- Carrier
N- CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain Gps 21 22.1 25 dB
Drain Efficiency ηD30.5 32 — %
Adjacent Channel Power Ratio ACPR — -46 -44 dBc
Input Return Loss IRL — -19 -9 dB
(continued)
MRFE6S9045NR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920- 960 MHz, 50 ohm system) VDD = 28 Vdc,
IDQ = 350 mA, Pout = 16 W Avg., f = 920-960 MHz, GSM EDGE Signal
Power Gain Gps — 20 — dB
Drain Efficiency ηD— 46 — %
Error Vector Magnitude EVM — 1.5 — %
Spectral Regrowth at 400 kHz Offset SR1 — -62 — dBc
Spectral Regrowth at 600 kHz Offset SR2 — -78 — dBc
Typical CW Performances (In Freescale GSM Test Fixture Optimized for 920 -960 MHz, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA,
Pout = 45 W, f = 920 -960 MHz
Power Gain Gps — 20 — dB
Drain Efficiency ηD— 68 — %
Input Return Loss IRL — -12 — dB
Pout @ 1 dB Compression Point
(f = 940 MHz)
P1dB — 52 — W
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 350 mA, 865- 900 MHz Bandwidth
Video Bandwidth @ 48 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 10 —
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 10 W Avg. GF— 0.72 — dB
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.011 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.006 — dBm/°C
4
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
Figure 1. MRFE6S9045NR1 Test Circuit Schematic
Z10 0.360″ x 0.270″ Microstrip
Z11 0.063″ x 0.270″ Microstrip
Z12 0.360″ x 0.065″ Microstrip
Z13 0.095″ x 0.065″ Microstrip
Z14 0.800″ x 0.065″ Microstrip
Z15 0.260″ x 0.065″ Microstrip
Z16 0.325″ x 0.065″ Microstrip
PCB Taconic RF -35 0.030″, εr = 3.5
Z1 0.215″ x 0.065″ Microstrip
Z2 0.221″ x 0.065″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.460″ x 0.270″ Microstrip
Z5 0.040″ x 0.270″ Microstrip
Z6 0.280″ x 0.270″ x 0.530″Taper
Z7 0.087″ x 0.525″ Microstrip
Z8 0.435″ x 0.525″ Microstrip
Z9 0.057″ x 0.525″ Microstrip
R2
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C3
L1
Z1
C2
Z2 Z3
C1
Z4 Z5 Z6 Z7
C4
Z8
C6
Z9
Z10
C14
C12
B1
R3
R1
L2
B2
C7
C5
C9
C8
C10 C16 C17 C18
C15
Z11 Z12 Z13 Z15
C11
Z16
+
+ + +
C13
Z14
Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead 2743019447 Fair Rite
B2 Ferrite Bead 2743021447 Fair Rite
C1, C7, C10, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC
C2, C4, C12 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson
C3 15 pF Chip Capacitor ATC100B150JT500XT ATC
C5, C6 12 pF Chip Capacitors ATC100B120JT500XT ATC
C8, C9 13 pF Chip Capacitors ATC100B130JT500XT ATC
C11 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC
C13 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson
C15, C16, C17 10 µF, 35 V Tantalum Capacitors T491D106K035AT Kemet
C18 220 µF, 50 V Electrolytic Capacitor EMVY500ADA221MJA0G Nippon Chemi -con
L1, L2 12.5 nH Inductors A04T-5 Coilcraft
R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 560 kΩ, 1/4 W Chip Resistor CRCW120656001FKEA Vishay
R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay
MRFE6S9045NR1
5
RF Device Data
Freescale Semiconductor
Figure 2. MRFE6S9045NR1 Test Circuit Component Layout
C15
TO−270/272
Surface /
Bolt down
R2
R1 B1
R3
C7
L1
C1 C2
C3
C4
C6
C5
C8
L2
C10
C9 C11
C12
C13
C14
B2
C18
C16 C17
VGG
VDD
CUT OUT AREA
6
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
TYPICAL CHARACTERISTICS
960
15
23
800
−70
50
IRL
Gps
ALT1
ACPR
22 40
21 30
19 −30
18 −40
17 −50
16 −60
940920900880860840820
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−15
−10
ηD, DRAIN
EFFICIENCY (%)
0
−5
ηD
960
16
23
800
−70
34
IRL
Gps
ALT1
ACPR
22 32
21 30
20 −30
19 −40
18 −50
17 −60
940920900880860840820
Gps, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
−20
−15
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ Pout = 10 Watts Avg.
ηD, DRAIN
EFFICIENCY (%)
−10
0
−5
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance @ Pout = 20 Watts Avg.
Figure 5. Two - Tone Power Gain versus
Output Power
200
17
24
IDQ = 525 mA
Pout, OUTPUT POWER (WATTS) PEP
22
20
10
Gps, POWER GAIN (dB)
23
21
350 mA
1
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
175 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−30
−10
1
Pout, OUTPUT POWER (WATTS) PEP
10
−20
200
−60
−40
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
−50
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
20 −20
ηD
VDD = 28 Vdc, Pout = 20 W (Avg.)
IDQ = 350 mA, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
262.5 mA
437.5 mA
19
18
100
IDQ = 175 mA
350 mA
525 mA
262.5 mA
437.5 mA
100
VDD = 28 Vdc
Pout = 10 W (Avg.) IDQ = 350 mA
N−CDMA IS−95 Pilot Sync, Paging
Traffic Codes 8 Through 13
MRFE6S9045NR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
10
−80
−10
7th Order
Pout, OUTPUT POWER (WATTS) PEP
5th Order
3rd Order
−20
−30
−40
1 200
IMD, INTERMODULATION DISTORTION (dBc)
−50
−60
VDD = 28 Vdc, IDQ = 350 mA, f1 = 880 MHz
f2 = 880.1 MHz, Two−Tone Measurements
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
10
0
IM7−L
TWO−TONE SPACING (MHz)
−10
−20
−30
−40
−50
−60
1 100
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 48 W (PEP), IDQ = 350 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
Figure 9. Pulsed CW Output Power versus
Input Power
33
56
P6dB = 49.21 dBm (83.36 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 350 mA, Pulsed CW
12 µsec(on), 1% Duty Cycle, f = 880 MHz
54
52
50
46
24 2625 2827 3129
Actual
Ideal
55
51
53
49
30 32
Pout, OUTPUT POWER (dBm)
48
47
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0 −75
Pout, OUTPUT POWER (WATTS) AVG.
70 −5
50 −25
40
−45
30
−55
10
110
−65
20
ALT1
ηD
Gps TC = −30_C
ACPR
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 350 mA
f = 880 MHz, N−CDMA IS−95 Pilot
Sync, Paging, Traffic Codes 8
Through 13
ALT1, CHANNEL POWER (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
25_C
100
−70
100
IM5−L
IM5−U
IM3−U IM3−L
−70
IM7−U
34
P3dB = 48.40 dBm (69.18 W)
P1dB = 47.38 dBm
(54.7 W)
65
60
55
45
35
25
15
5
−20
−30
−35
−40
−50
−60
−70
−30_C
85_C
25_C
−15
−10
85_C
25_C
−30_C
−30_C
85_C
25_C
85_C
8
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
TYPICAL CHARACTERISTICS
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 10 W Avg., and ηD = 32%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
100
23
1
0
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 350 mA
f = 880 MHz
TC = −30_C
85_C
10
22
21
19
17
70
60
50
40
30
20
ηD, DRAIN EFFICIENCY (%)
Gps
ηD
Gps, POWER GAIN (dB)
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 24 V
Gps, POWER GAIN (dB)
10008020
23
21
20
19
40 60
22
IDQ = 350 mA
f = 880 MHz
20
18
16
15
10
−30_C
18
28 V 32 V
85_C
25_C
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
106
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
25_C
MRFE6S9045NR1
9
RF Device Data
Freescale Semiconductor
N- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 14. Single-Carrier CCDF N- CDMA
10
1
0.1
0.01
0.001
2468
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
PROBABILITY (%)
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−60
−110
−10
(dB)
−20
−30
−40
−50
−70
−80
−90
−100
+ACPR in 30 kHz
Integrated BW
1.2288 MHz
Channel BW
2.9
0.7 2.2
1.5
0−0.7
−1.5
−2.2
−2.9
−3.6 3.6
f, FREQUENCY (MHz)
Figure 15. Single-Carrier N-CDMA Spectrum
−ACPR in 30 kHz
Integrated BW
−ALT1 in 30 kHz
Integrated BW
+ALT1 in 30 kHz
Integrated BW
10
RF Device Data
Freescale Semiconductor
MRFE6S9045NR1
Figure 16. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
850
865
880
3.05 + j1.27
3.31 + j1.33
3.16 + j1.33
0.42 + j0.30
0.42 + j0.44
0.45 + j0.60
VDD = 28 Vdc, IDQ = 350 mA, Pout = 10 W Avg.
895
910 3.35 + j1.05
3.43 + j1.200.48 + j0.74
0.50 + j0.85
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zo = 5 Ω
Zsource
f = 850 MHz
f = 910 MHz
Zload f = 910 MHz
f = 850 MHz
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PACKAGE DIMENSIONS
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MRFE6S9045NR1
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MRFE6S9045NR1
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2007 •Initial Release of Data Sheet
MRFE6S9045NR1
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Document Number: MRFE6S9045N
Rev. 0, 10/2007