Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
MMBT5088LT1/D
MMBT5088LT1G,
SMMBT5088LT1G,
MMBT5089LT1G,
SMMBT5089LT1G
Low Noise Transistors
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
VCEO 30
25
Vdc
Collector−Base Voltage
MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
VCBO 35
30
Vdc
Emitter−Base Voltage VEBO 4.5 Vdc
Collector Current − Continuous IC50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure
,
BRD8011/D.
MMBT5088LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBT5089LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1x M G
G
1x = Device Code
x = Q for MMBT5088L
SMMBT5088L
x = R for MMBT5089L
SMMBT5089L
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
SMMBT5088LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBT5089LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
V(BR)CEO 30
25
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
V(BR)CBO 35
30
−
−
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) MMBT5088, SMMBT5088
(VCB = 15 Vdc, IE = 0) MMBT5089, SMMBT5089
ICBO
−
−
50
50
nAdc
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0) MMBT5088, SMMBT5088
(VEB(off) = 4.5 Vdc, IC = 0) MMBT5089, SMMBT5089
IEBO
−
−
50
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
hFE 300
400
350
450
300
400
900
1200
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
−0.5
Vdc
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
−0.8
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT50 −
MHz
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Ccb
−4.0
pF
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Ceb
−10
pF
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
hfe 350
450
1400
1800
−
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz) MMBT5088, SMMBT5088
MMBT5089, SMMBT5089
NF
−
−
3.0
2.0
dB
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G
http://onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300 mA
30 mA
RS 0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
RS 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
IC = 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G
http://onsemi.com
4
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2
1.00.1 5.0
FE
VCE = 5.0 V
TA = 125C
25C
-55C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.8
-1.2
-1.6
-2.4
TJ = 25C to 125C
-55C to 25C
RVBE, BASE-EMITTER
TEMPERATURE COEFFICIENT (mV/ C)
-0.4
-2.0
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25C
Figure 10. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0.01
0
TJ = 25C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25C
Ccb
Cob Ceb Cib
Figure 12. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
MMBT5088LT1G, SMMBT5088LT1G, MMBT5089LT1G, SMMBT5089LT1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBT5088LT1/D
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