DS30368 Rev. 4 - 2 1 of 3 BSS123W
www.diodes.com ã Diodes Incorporated
BSS123W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·High Drain-Source Voltage Rating
·Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 100 V
Drain-Gate Voltage RGS £ 20KWVDGR 100 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous
Pulsed
ID
IDM
170
680 mA
Total Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
·Case: SOT-323
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminal Connections: See Diagram
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
·Marking: Date Code and Type Code, See Page 3
·Type Code: K23
·Weight: 0.006 grams (approximate)
Mechanical Data
TCUDORP WEN
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.