IXTH26P20P - IXYS - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C - 200 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ- 200 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C - 26 A

IDM TC= 25°C, pulse width limited by TJM - 70 A

IAR TC= 25°C - 26 A

EAR TC= 25°C50mJ

EAS TC= 25°C 1.5 J

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns

PDTC= 25°C 300 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062 in.) from case for 10s 300 °C

TSOLD Plastic body for 10s 260 °C

MdMounting torque (TO-3P,TO-220,TO-247) 1.13/10 Nm/lb.in.

Weight TO-247 6.0 g

TO-3P 5.5 g

TO-220 3.0 g

TO-263 2.5 g

DS99913(10/07)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = -250 μA - 200 V

VGS(th) VDS = VGS, ID = -250μA - 2.5 - 4.5 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS - 10 μA

VGS = 0V TJ = 150°C - 250 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 170 mΩ

PolarPTM

Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

IXTA26P20P

IXTH26P20P

IXTP26P20P

IXTQ26P20P

VDSS = - 200V

ID25 = - 26A

RDS(on) ≤≤

≤≤

≤ 170mΩΩ

ΩΩ

Ω

Preliminary Technical Information

Features:

zInternational standard packages

zFast intrinsic diode

zDynamic dV/dt Rated

zAvalanche Rated

zRugged PolarPTM process

zLow QG and Rds(on) characterization

zLow Drain-to-Tab capacitance

zLow package inductance

- easy to drive and to protect

Applications:

zHight side switching

zPush-pull amplifiers

zDC Choppers

zCurrent regulators

zAutomatic test equipment

Advantages:

zLow gate charge results in simple

drive requirement

zImproved Gate, Avalanche and

dynamic dV/dt ruggedness

zHigh power density

zFast switching

G = Gate D = Drain

S = Source TAB = Drain

TO-263 (IXTA)

GS

D(TAB)

TO-247 (IXTH) TO-220 (IXTP)

DD(TAB)

G

S

GDS

TO-3P (IXTQ)

D(TAB)

GDSD(TAB)

IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, (Note 1) 10 17 S

Ciss 2920 pF

Coss VGS = 0V, VDS = -25V, f = 1MHz 540 pF

Crss 100 pF

td(on) 18 ns

tr 33 ns

td(off) 46 ns

tf 21 ns

Qg(on) 56 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC

Qgd 20 nC

RthJC 0.5 °C/W

RthCS (TO-3P)(TO-247) 0.21 °C/W

(TO-220) 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

ISVGS = 0V - 26 A

ISM Repetitive - 104 A

VSD IF = -13A, VGS = 0V, Note 1 - 3.0 V

trr 240 ns

QRM 2.20 μC

IRM -18.0 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 3.3Ω (External)

IF = -13A, -di/dt = -100A/μs

VR = -100V, VGS = 0V

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

TO-247 (IXTH) Outline

Terminals: 1 - Gate 2 - Drain

e

∅ P

1 2 3

TO-3P (IXTQ) Outline

Pins: 1 - Gate 2 - Drain

TO-220 (IXTP) Outline

TO-263 (IXTA) Outline

IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 1. Output Characteristics

@ 25º C

-28

-24

-20

-16

-12

-8

-4

0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Volts

I

D

- A mpe res

V

GS

= -10

V

-8

V

-5

V

-6

V

-7

V

Fig. 2. Extended Output Characteristics

@ 25ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0-30-27-24-21-18-15-12-9-6-30V

DS

- V olts

I

D

- A mpe res

V

GS

= -10

V

-9

V

-8

V

-6

V

-7

V

-5

V

Fi g . 3. Outp u t Char acteristi cs

@ 150ºC

-28

-24

-20

-16

-12

-8

-4

0-10-9-8-7-6-5-4-3-2-10V

DS

- Volts

I

D

- Am peres

V

GS

= -10

V

-8

V

-6

V

-5

V

-7

V

Fig. 4. R

DS(on)

Normalized to I

D

= -13A vs.

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- N ormalize d

V

GS

= -10V

I

D

= -26

A

I

D

= -13

A

Fig. 5. R

DS(on)

Normalized to I

D

= -13A vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

3.4

-90-80-70-60-50-40-30-20-100I

D

- A mp e res

R

DS(on)

- N orma liz ed

V

GS

= - 10V

-15V

- - - -

T

J

= 25ºC

T

J

= 175ºC

Fig. 6. Maxim um Drain Current vs.

Case Temp eratu r e

-28

-26

-24

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Cen tigrade

I

D

- A mp ere s

Fig. 7. Input Adm ittance

-45

-40

-35

-30

-25

-20

-15

-10

-5

0-7-6.5-6-5.5-5-4.5-4-3.5-3

V

GS

- Volts

I

D

- A mp ere s

T

J

= - 40ºC

25ºC

150ºC

Fig. 8. Transconductance

0

4

8

12

16

20

24

28

32

-50-45-40-35-30-25-20-15-10-50

I

D

- Amp eres

g

f s

- S ie me ns

T

J

= - 40ºC

25ºC

150ºC

Fi g . 9. F or war d Vo l tag e D r o p of

Intrinsic Diode

-80

-70

-60

-50

-40

-30

-20

-10

0-4-3.5-3-2.5-2-1.5-1-0.5

V

SD

- Vo lts

I

S

- Am peres

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

00 5 10 15 20 25 30 35 40 45 50 55 60

Q

G

- NanoCoul ombs

V

GS

- V o lts

V

DS

= - 100V

I

D

= - 13A

I

G

= -1mA

Fig. 11. Capacitance

10

100

1,000

10,000

-40-35-30-25-20-15-10-50

V

DS

- Volts

Capacitance - P icoF arads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. For war d-Bi as Safe Op e r ati n g Area

1

10

100

10 100 1000

V

DS

- Volts

I

D

- A mp ere s

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

----

100ms

IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 13 . Maximum T r a n si e n t Thermal I mped ance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: T_26P20P(B5)10-10-07