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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SB1245 Ultra Low VF Schottky Barrier Rectifier Applications * This device is designed for low voltage, high frequency inverters, free-wheeling and polarity protection applications. * This is also designed as bypass diode for solar modules. Features * * * * * UL Flammability Classification 94V-O Environment Standards MIL-S-19500/228 Compliant Low Power Loss, High Efficiency High Surge Capacity Pb-free, RoHS Compliant DO-201AD COLOR BAND DENOTES CATHODE Ordering Information Part Number Top Mark Package Packing Method SB1245 SB1245 DO-201AD Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 45 V VRMS Maximum RMS Voltage 31 V VDC Maximum DC Blocking Voltage 45 V IF(AV) Maximum Average Forward Current 12 A IFSM Peak Forward Surge Current, 8.3 ms Single Half-Sine-Wave, Superimposed on Rated Load (JEDEC Method) 150 A Maximum Forward Voltage at IF = 12 A 0.55 V VF IR Maximum DC Reverse Current at Rated VDC I2t Rating for Fusing (t<8.3 ms) TJ TSTG TJ = 25C 0.1 TJ = 100C 10 3.7 Operating Junction Temperature Range -55 to +150 Operating Junction Temperature Range, In DC Forward Mode -55 to +200 Storage Temperature Range -55 to +175 (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. 1.3 mA A2sec C C www.fairchildsemi.com SB1245 -- Ultra Low VF Schottky Barrier Rectifier February 2015 Values are at TA = 25C unless otherwise noted. Symbol RJL Parameter Typical Thermal Resistance, Junction-to-Lead Value Unit 10.5 C/W Note: 1.Temperature read point using thermocouple is at 10 mm from case edge. (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. 1.3 www.fairchildsemi.com 2 SB1245 -- Ultra Low VF Schottky Barrier Rectifier Thermal Characteristics(1) 20 16 16 DC Forward Current [A] Average Forward Current [A] 20 12 8 4 12 8 4 Temperature read point using thermocouple is at 10mm from case edge. Temperature read point using thermocouple is at 10mm from case edge. 0 0 50 100 0 150 0 50 o 100 150 200 o Lead Temperature [ C] Lead Temperature [ C] Figure 1a. Average Forward Current Derating Curve Figure 1b. DC Forward Current Derating Curve 100 100 o TJ=150 C IR- Instantaneous Reverse Current [mA] o 10 o TJ=100 C IR- Reverse Current [mA] 1 o 0.1 TJ=85 C 0.01 1E-3 o TJ=25 C 1E-4 1E-5 o TJ= -40 C 1E-6 1E-7 5 10 15 20 25 30 35 40 TJ=150 C 10 o TJ=125 C o TJ=100 C 1 o TJ=75 C 0.1 0.01 o TJ=25 C 1E-3 0 45 60 80 100 120 140 10000 CJ- Total Capacitance [pF] 100 IF- Forward Current [A] 40 Figure 3. Typical Reverse Characteristics Figure 2. Reverse Current vs. Reverse Voltage 10 o TA=100 C 1 o TA=25 C 0.1 o TA= -40 C 0.01 0.0 20 Percent of Rated Reverse Voltage [%] VR- Reverse Voltage [V] 0.2 0.4 0.6 0.8 100 10 0.1 1.0 1 10 100 VR - Reverse Voltage [V] VF- Forward Voltage [V] Figure 5. Typical Junction Capacitance Figure 4. Forward Voltage vs. Forward Current (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. 1.3 1000 www.fairchildsemi.com 3 SB1245 -- Ultra Low VF Schottky Barrier Rectifier Typical Performance Characteristics SB1245 -- Ultra Low VF Schottky Barrier Rectifier Physical Dimensions 25.40 MIN (2X) 9.50 7.20 b NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO-201 VARIATION AD. B) PLASTIC PACKAGE BODY. D) ALL DIMENSIONS ARE IN MILLIMETERS. E) b DIMENSION REPRESENT LIKE BELOW: OPTION AD = 1.20MIN TO 1.30MAX OPTION AE = 0.94MIN TO 1.07MAX E) DRAWING FILE NAME: DO201AREV1 5.60 4.80 Figure 6. AXIAL LEADED, JEDEC DO201, OPTION AD (c) 2009 Fairchild Semiconductor Corporation SB1245 Rev. 1.3 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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