VUO62-12NO7
-
~
+
~
~
D1 D3 D5
D2 D4 D6
3~ Rectifier Bridge
Standard Rectifier Module
Part number
VUO62-12NO7
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-D
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
RRM
1200
I 60
FSM
550
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191220bData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO62-12NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.07
R1.1 K/W
R
min.
60
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
V
T = °C
C
120
P
tot
110 WT = 25°C
C
RK/W0.4
20
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions
Unit
1.30
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
8.1 mΩ
V0.96T = °C
VJ
I = A
V
20
1.27
I = A
60
I = A
60
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
19
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
550
595
1.11
1.06
A
A
A
A
470
505
1.52
1.48
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20191220bData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO62-12NO7
Ratings
XXXX-XXXX yywwZ
Circuit
Diagram
Product
Number
Date Code
Logo
UL
Lot#
1234
Location
Package
T
op
°C
M
D
Nm5.75
mounting torque
4.25
T
VJ
°C150
virtual junction temperature
-40
Weight g159
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
M
T
Nm5.75
terminal torque
4.25
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
9.5
26.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
150 A
per terminal
125-40
terminal to terminal
PWS-D
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO62-12NO7 460451Box 10VUO62-12NO7Standard
3000
ISOL
T
stg
°C125
storage temperature
-40
2500
threshold voltage
V0.78
mΩ
V
0 max
R
0 max
slope resistance *
6.9
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
°C
* on die level
150
IXYS reserves the right to change limits, conditions and dimensions. 20191220bData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO62-12NO7
-
~
+
~
~
D1 D3 D5
D2 D4 D6
Outlines PWS-D
IXYS reserves the right to change limits, conditions and dimensions. 20191220bData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
VUO62-12NO7
011
100
1000
10000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
20
40
60
80
100
0.001 0.010 0.100 1.000
200
300
400
5
00
1 10 100 1000 10000
0.0
0.4
0.8
1.2
0 25 50 75 100 125 150 1750 10 20
0
10
20
30
0 25 50 75 100 125 150
0
20
40
60
80
100
I
FSM
[A]
t [s] t [ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t [ms]
Constants for Z
thJC
calculation:
i R
th
(K/W) t
i
(s)
1 0.05 0.001
2 0.14 0.030
3 0.25 0.060
4 0.35 0.130
5 0.31 0.920
0.8 x V
RRM
50 Hz
T
VJ
= 45°C T
VJ
= 45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 25°C
Graph 1*
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fi
g
.
6
T
r
ans
i
ent
therma
l
i
m
ped
a
nc
e
ju
n
c
t
i
on
to
case
vs.
t
i
me
p
e
r
d
i
od
e
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191220bData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved