Semiconductor Components Industries, LLC, 2003
April, 2003 - Rev. 6 1Publication Order Number:
1N5817/D
1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free wheeling diodes, and
polarity protection diodes.
•Extremely Low VF
•Low Stored Charge, Majority Carrier Conduction
•Low Power Loss/High Efficiency
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 0.4 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
•Shipped in plastic bags, 1000 per bag.
•Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to
the part number
•Polarity: Cathode Indicated by Polarity Band
•Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Please See the Table on the Following Page
Device Package Shipping
ORDERING INFORMATION
AXIAL LEAD
CASE 59-10
DO-41
PLASTIC
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
1N5817 Axial Lead 1000 Units/Bag
1N5817RL Axial Lead 5000/Tape & Reel
1N5818 Axial Lead 1000 Units/Bag
1N5818RL Axial Lead 5000/Tape & Reel
1N5819 Axial Lead 1000 Units/Bag
1N5819RL Axial Lead 5000/Tape & Reel
MARKING DIAGRAM
1N
581x
1N581x= Device Code
x = 7, 8 or 9
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1N5817, 1N5818, 1N5819
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2
MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
Non-Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (Note 1)
(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
IO1.0 A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) TA85 80 75 °C
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half-wave, single phase 60 Hz,
TL = 70°C)
IFSM 25 (for one cycle) A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied) TJ, Tstg -65 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 80 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
vF0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL = 25°C)
(TL = 100°C)
IR1.0
10 1.0
10 1.0
10
mA
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
125
115
105
95
85
75 2015107.05.04.03.0
2.0
TR, REFERENCE TEMPERATURE (
°
C)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature
1N5817
40 30 23
60
80
RθJA (°C/W) = 110
125
115
105
95
85
75 2015107.05.0 304.03.0
40 30 23
RθJA (°C/W) = 110
80 60
Figure 2. Maximum Reference Temperature
1N5818
125
115
105
95
85
75 2015107.05.0 304.0 40
RθJA (°C/W) = 110
60
80
Figure 3. Maximum Reference Temperature
1N5819
Circuit
Load
Half Wave
Resistive Capacitive*
Full Wave, Bridge
Resistive Capacitive
Full Wave, Center Tapped*†
Resistive Capacitive
Sine Wave
Square Wave
0.5
0.75
1.3
1.5
0.5
0.75
0.65
0.75
1.0
1.5
1.3
1.5
40
30
23
TR, REFERENCE TEMPERATURE ( C)
°
VR, DC REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
*Note that VR(PK) 2.0 Vin(PK).†Use line to center tap voltage for Vin.
Table 1. Values for Factor F
TR, REFERENCE TEMPERATURE (
°
C)
1N5817, 1N5818, 1N5819
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3
NOTE 1. — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 VRWM. Proper derating may be
accomplished by use of equation (1).
TA(max) =
where TA(max) =
TJ(max) =
PF(AV) =
PR(AV) =
RθJA =
TJ(max) - RθJAPF(AV) - RθJAPR(AV)
Maximum allowable ambient temperature
Maximum allowable junction temperature
(1)
Average forward power dissipation
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
Average reverse power dissipation
Junction-to-ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
TR = TJ(max) - RθJAPR(AV) (2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR - RJAPF(AV) (3)
Inspection of equations (2) and (3) reveals that TR is the
ambient temperature at which thermal runaway occurs or
where TJ = 125°C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115°C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is: (4)
VR(equiv) = Vin(PK) x F
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find TA(max) for 1N5818 operated in a
12-volt dc supply using a bridge circuit with capacitive filter
such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input
Voltage = 10 V(rms), RθJA = 80°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109°C
Step 1. Find @ VR = 9.2 V and RθJA = 80°C/W.
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W
@I(FM)
I(AV) = 10 and IF(AV) = 0.5 A.
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 - (80) (0.5) = 69°C.
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.
1N5817, 1N5818, 1N5819
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4
7/8
20
40
50
90
80
70
60
30
10 3/45/81/23/81/4 1.01/81
RθJL
, THERMAL RESISTANCE, JUNCTION−TO−LEAD (°C/W)
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
L, LEAD LENGTH (INCHES)
Figure 4. Steady-State Thermal Resistance
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05 4.02.01.00.80.60.40.2
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
dc
SQUARE WAVE
TJ ≈ 125°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10k2.0k1.0k5002001005020105.02.01.00.50.20.1 5.0k
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
ZθJL(t) = ZθJL • r(t)
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of
an
equivalent square power pulse.
TJL = Ppk RJL [D + (1 - D) r(t1 + tp) + r(tp) - r(t1)]
where
TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Fig-
ure 6, i.e.:
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1
+ tp.
t, TIME (ms)
NOTE 2. — MOUNTING DATA
Data shown for thermal resistance junction-to-ambient
(RθJA) for the mountings shown is to be used as typical guide-
line values for preliminary engineering, or in case the tie
point temperature cannot be measured.
TYPICAL VALUES FOR RθJA IN STILL AIR
Mounting
Method 1/8 1/4 1/2 3/4
Lead Length, L (in)
RθJA
1
2
3
52
67 65
80 72
87 85
100 °C/W
°C/W
°C/W
50
Mounting Method 1
P.C. Board with
1-1/2 ″ x 1-1/2″
copper surface.
Mounting Method 3
P.C. Board with
1-1/2 ″ x 1-1/2″
copper surface.
LL
L = 3/8″
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
LL
Mounting Method 2
5
10
20
Sine Wave
I(FM)
I(AV)
= π (Resistive Load)
Capacitive
Loads {
Figure 5. Forward Power Dissipation
1N5817-19
Figure 6. Thermal Response
1N5817, 1N5818, 1N5819
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5
100705.0
125
115
105
95
85
75 207.0 103.02.0 301.0 40
15
5.0
3.0
2.0
0.3
0.2
0.1
403612
30
20
1.0
0.5
0.05
0.03 2416 208.04.0 28032
10
20
7.0
5.0
2.0
0.2
0.3
0.5
0.7
1.0
3.0
0.9 1.0 1.1
0.1
0.07
0.05
0.03
0.02 0.60.50.40.30.2 0.70.1 0.8
NOTE 3. — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
TA(A) TA(K)
RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)
PD
TL(A) TC(A) TJTC(K) TL(K)
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 7. Typical Forward Voltage
IFSM, PEAK SURGE CURRENT (AMP)
NUMBER OF CYCLES
Figure 8. Maximum Non-Repetitive Surge Current
IR, REVERSE CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
TC = 100°C
25°C
1 Cycle
TL = 70C
f = 60 Hz
Surge Applied at
Rated Load Conditions
1N5817
1N5818
1N5819
TJ = 125°C
100°C
25°C
Use of the above model permits junction to lead thermal re-
sistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RθS = Thermal Resistance, Heatsink to Ambient
RθL = Thermal Resistance, Lead to Heatsink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, re-
spectively.) Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum
RθJ = 36°C/W typically and 46°C/W maximum.
75°C
1N5817, 1N5818, 1N5819
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NOTE 4. — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to minor-
ity carrier injection and stored charge. Satisfactory circuit
analysis work may be performed by using a model consist-
ing of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For exam-
ple, relative waveform rectification efficiency is approxi-
mately 70 percent at 2.0 MHz, e.g., the ratio of dc power to
RMS power in the load is 0.28 at this frequency, whereas
perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in
waveform efficiency is not indicative of power loss: it is
simply a result of reverse current flow through the diode ca-
pacitance, which lowers the dc output voltage.
10 200.8
70
200
100
50
30
20
10
6.04.02.01.00.6 8.00.4 40
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
TJ = 25C
f = 1.0 MHz
1N5819
1N5818
1N5817
1N5817, 1N5818, 1N5819
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PACKAGE DIMENSIONS
CASE 59-10
ISSUE S
AXIAL LEAD, DO-41
B
D
K
K
F
F
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A4.10 5.200.161 0.205
B2.00 2.700.079 0.106
D0.71 0.860.028 0.034
F−−− 1.27−−− 0.050
K25.40 −−−1.000 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59−04 OBSOLETE, NEW STANDARD 59−09.
4. 59−03 OBSOLETE, NEW STANDARD 59−10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
1N5817, 1N5818, 1N5819
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “T ypical” parameters which may be provided in SCILLC data sheets and/or
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1N5817/D
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