AUIRF2807
11/09/11
www.irf.com 1
Features
lAdvanced Planar Technology
lLow On-Resistance
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
S
D
G
HEXFET® Power MOSFET
GDS
Gate Drain Source
TO-220AB
AUIRF2807
D
S
D
G
V
(BR)DSS
75V
R
DS(on)
max. 13mΩ
I
D(Silicon Limited)
82A
h
I
D (Package Limited)
75A
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for, pro-
vides the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy
dg
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.65
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
JA
Junction-to-Ambient ––– 62
±20
5.9
43
23
10 lbf
y
in (1.1N
y
m)
-55 to + 175
°C/W
300 (1.6mm from case )
W
340
230
Max.
82
h
58
280
75
1.5
PD - 96384A
AUIRF2807
2www.irf.com
S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 370μH, RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12)
ISD ≤ 43A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Notes:
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 13
V
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 38 ––– ––– S
I
DSS Drain-to-Source Leakage Current ––– ––– 25 μA
––– ––– 250
I
GSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
gTotal Gate Charge ––– ––– 160
Q
gs Gate-to-Source Charge ––– ––– 29 nC
Q
gd Gate-to-Drain ("Miller") Charge ––– ––– 55
t
d(on) Turn-On Delay Time ––– 13 –––
t
rRise Time –––64–––
t
d(off) Turn-Off Delay Time ––– 49 ––– ns
t
fFall Time ––– 48 –––
L
DInternal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
SInternal Source Inductance Between lead,
and center of die contact
C
iss Input Capacitance ––– 3820 –––
C
oss Output Capacitance ––– 610 –––
C
rss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 100 150 ns
Q
rr
Reverse Recovery Charge ––– 410 610 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = -20V
mΩ
integral reverse
p-n junction diode.
VDS = 50V, ID = 43A
f
ID = 43A
VDS = 60V
Conditions
VGS = 10V,, See Fig.10
f
VGS = 0V
VDS = 25V
VGS = 20V
T
J
= 25°C, I
S
= 43A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 43A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 43A
f
VDS = VGS, ID = 250μA
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 10V, See Fig.6 and 13
f
VDD = 38V
ID = 43A
RG = 2.5Ω
––– –––
––––––
4.5
7.5
–––
–––
–––
82
h
280
pF
––– MOSFET symbol
showing the
AUIRF2807
www.irf.com 3
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
Qualification Information
†
Moisture Sensitivity Level
3L-TO-220
N/A
Charged Device Model Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
RoHS Compliant Yes
ESD
Machine Model Class M4(+/- 800V )
†††
(per AEC-Q101-002)
Human Body Model Class H1C(+/- 2000V )
†††
(per AEC-Q101-001)
AUIRF2807
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0
V = 25V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
71A
AUIRF2807
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
040 80 120 160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
43A
V = 15V
DS
V = 37V
DS
V = 60V
DS
0.1
1
10
100
1000
0.0 0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
AUIRF2807
6www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
20
40
60
80
100
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
AUIRF2807
www.irf.com 7
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
18A
30A
43A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
QG
QGS QGD
VG
Charge
VGS
AUIRF2807
8www.irf.com
Peak Diode Recovery dv/dt Test Circuit
Fig 14. For N-channel HEXFET® power MOSFETs
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
AUIRF2807
www.irf.com 9
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF2807
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF2807
10 www.irf.com
Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF2807 TO-220 Tube 50 AUIRF2807
AUIRF2807
www.irf.com 11
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to
support this warranty. Except where mandated by government requirements, testing of all parameters of each product
is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information
with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR
products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the
design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are
designed and manufactured to meet DLA military specifications required by certain military, aerospace or other
applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in
applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible for
compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
International Rectifier:
AUIRF2807