BZX384C15 - Vishay Presicion Group

VISHAY

BZX384-Series

Document Number 85764

Rev. 1.5, 08-Jul-04

Vishay Semiconductors

www.vishay.com

17431

Small Signal Zener Diodes

Features

• Silicon Planar Power Zener Diodes

• The Zener voltages are graded according to the

international E 24 standard.

• Standard Zener voltage tolerance is ± 5 %.

Replace "C" with "B" for ± 2 % tolerance.

Mechanical Da ta

Case: SOD-323 Plastic case

Weight: approx. 5.0 mg

Packaging Codes/Options:

GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box

GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

1) Device on fiberglass substrate

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

1) Valid that electrodes are kept at ambient temperature

Parameter Test condition Symbol Value Unit

Power dissipation Ptot 200 1) mW

Parameter Test condition Symbol Value Unit

Thermal resistance junction to

ambient air RthJA 650 1) °C/W

Junction temperature Tj150 °C

Storage temperature range TS- 65 to + 150 °C

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2Document Number 85764

Rev. 1.5, 08-Jul-04

VISHAY

BZX384-Series

Vishay Semiconductors

Electrical Characteristics

(1) Measured with pulses tp = 5 ms

Partnumber Marki

Code

Zener Voltage

Range Dynamic Resistance Test

Curre

Temperature

Coefficient of

Zener Voltage

Test

Curre

Reverse Leakage

Current

VZ @ IZT rzj @ IZT1 rzj @ IZT2 IZT1 αVZ @ IZT1 @IZT2 IRVR

VΩ Ω mA 10-4/°C mA µA V

min max typ typ min max

BZX384C2V4 W1 2.2 2.6 70 (≤100) 275 5 -9 -4 1 50 1

BZX384C2V7 W2 2.5 2.9 75 (≤100) 300 (≤600) 5 -9 -4 1 20 1

BZX384C3 W3 2.8 3.2 80 (≤95) 325 (≤600) 5 -9 -3 1 10 1

BZX384C3V3 W4 3.1 3.5 85 (≤95) 350 (≤600) 5 -8 -3 1 5 1

BZX384C3V6 W5 3.4 3.8 85 (≤90) 375 (≤600) 5 -8 -3 1 5 1

BZX384C3V9 W6 3.7 4.1 85 (≤90) 400 (≤600) 5 -7 -3 1 3 1

BZX384C4V3 W7 4 4.6 80 (≤90) 410 (≤600) 5 -6 -1 1 3 1

BZX384C4V7 W8 4.4 5 50 (≤80) 425 (≤500) 5 -5 2 1 3 2

BZX384C5V1 W9 4.8 5.4 40 (≤60) 400 (≤480) 5 -3 4 1 2 2

BZX384C5V6 WA 5.2 6 15 (≤40) 80 (≤400) 5 -2 6 1 1 2

BZX384C6V2 WB 5.8 6.6 6.0 (≤10) 40 ( ≤150) 5 -1 7 1 3 4

BZX384C6V8 WC 6.4 7.2 6.0 (≤15) 30 (≤80)52712 4

BZX384C7V5 WD 7 7.9 6.0 (≤15) 30 (≤80)53711 5

BZX384C8V2 WE 7.7 8.7 6.0 (≤15) 40 (≤80) 5 4 7 1 0.7 5

BZX384C9V1 W F 8.5 9.6 6.0 (≤15) 40 (≤100) 5 5 8 1 0.5 6

BZX384C10 WG 9.4 10.6 8.0 (≤20) 50 (≤150) 5 5 8 1 0.2 7

BZX384C11 WH 10.4 11.6 10 (≤20) 50 (≤150) 5 5 9 1 0.1 8

BZX384C12 WI 11.4 12.7 10 (≤25) 50 (≤150) 5 6 9 1 0.1 8

BZX384C13 WK 12.4 14.1 10 (≤30) 50 (≤170) 5 7 9 1 0.1 8

BZX384C15 WL 13.8 15.6 10 (≤30) 50 (≤200) 5 7 9 1 0.05 0.7VZnom.

BZX384C16 WM 15.3 17.1 10 (≤40) 50 (≤200) 5 8 9.5 1 0.05 0.7VZnom.

BZX384C18 WN 16.8 19.1 10 (≤45) 50 (≤225) 5 8 9.5 1 0.05 0.7VZnom.

BZX384C20 WO 18.8 21.2 15 (≤55) 60 (≤225) 5 8 10 1 0.05 0.7VZnom.

BZX384C22 WP 20.8 23.3 20 (≤55) 60 (≤250) 5 8 10 1 0.05 0.7VZnom.

BZX384C24 WR 22.8 25.6 25 (≤70) 60 (≤250) 5 8 10 1 0.05 0.7VZnom.

BZX384C27 WS 25.1 28.9 25 (≤80) 65 (≤300) 2 8 10 0.5 0.05 0.7VZnom.

BZX384C30 WT 28 32 30 (≤80) 70 (≤300) 2 8 10 0.5 0.05 0.7VZnom.

BZX384C33 WU 31 35 35 (≤80) 75 ( ≤325) 2 8 10 0.5 0.05 0.7VZnom.

BZX384C36 WW 34 38 35 (≤90) 80 (≤350) 2 8 10 0.5 0.05 0.7VZnom.

BZX384C39 WX 37 41 40 (≤130) 80 (≤350) 2 10 12 0.5 0.05 0.7VZnom.

BZX384C43 WY 40 46 45 (≤150) 85 (≤375) 2 10 12 0.5 0.05 0.7VZnom.

BZX384C47 W Z 44 50 50 (≤170) 85 (≤375) 2 10 12 0.5 0.05 0.7VZnom.

BZX384C51 X1 48 54 60 (≤180) 85 (≤400) 2 10 12 0.5 0.05 0.7VZnom.

BZX384C56 X2 52 60 70 (≤200) 100 (≤425) 2 9 11 0.5 0.05 0.7VZnom.

BZX384C62 X3 58 66 80 (≤215) 100 (≤450) 2 9 12 0.5 0.05 0.7VZnom.

BZX384C68 X4 64 72 90 (≤240) 150 (≤475) 2 10 12 0.5 0.05 0.7VZnom.

BZX384C75 X5 70 79 95 (≤255) 170 (≤500) 2 10 12 0.5 0.05 0.7VZnom.

VISHAY

BZX384-Series

Document Number 85764

Rev. 1.5, 08-Jul-04

Vishay Semiconductors

www.vishay.com

Electrical Characteristics

Partnumber Marki

Code

Zener V oltage

Range Dynamic Resistance Test

Curre

Temperature

Coefficient of

Zener Voltage

Test

Curre

Reverse Leakage

Current

VZ @ IZT rzj @ IZT1 rzj @ IZT2 IZT1 αVZ @ IZT1 @IZT2 IRVR

VΩ Ω mA 10-4/°C mA µA V

min max typ typ min max

BZX384B2V4 W1 2.35 2.45 70 (≤100) 275 5 -9 -4 1 50 1

BZX384B2V7 W2 2.65 2.75 75 (≤100) 300 (≤600) 5 -9 -4 1 20 1

BZX384B3 W3 2.94 3.06 80 (≤95) 325 (≤600) 5 -9 -3 1 10 1

BZX384B3V3 W 4 3.23 3.37 85 (≤95) 350 (≤600) 5 -8 -3 1 5 1

BZX384B3V6 W 5 3.53 3.67 85 (≤90) 375 (≤600) 5 -8 -3 1 5 1

BZX384B3V9 W 6 3.82 3.98 85 (≤90) 400 (≤600) 5 -7 -3 1 3 1

BZX384B4V3 W 7 4.21 4.39 80 (≤90) 410 (≤600) 5 -6 -1 1 3 1

BZX384B4V7 W 8 4.61 4.79 50 (≤80) 425 (≤500) 5 -5 2 1 3 2

BZX384B5V1 W 9 5.00 5.20 40 (≤60) 400 (≤480) 5 -3 4 1 2 2

BZX384B5V6 WA 5.49 5.71 15 (≤40) 80 (≤400) 5 -2 6 1 1 2

BZX384B6V2 W B 6.08 6.32 6.0 (≤10) 40 (≤150) 5 -1 7 1 3 4

BZX384B6V8 WC 6.66 6.94 6.0 (≤15) 30 (≤80)52712 4

BZX384B7V5 WD 7.35 7.65 6.0 (≤15) 30 (≤80)53711 5

BZX384B8V2 W E 8.04 8.36 6.0 (≤15) 40 (≤80) 5 4 7 1 0.7 5

BZX384B9V1 WF 8.92 9.28 6.0 (≤15) 40 (≤100) 5 5 8 1 0.5 6

BZX384B10 WG 9.80 10.2 8.0 (≤20) 50 (≤150) 5 5 8 1 0.2 7

BZX384B11 WH 10.8 11.2 10 (≤20) 50 (≤150) 5 5 9 1 0.1 8

BZX384B12 W I 11.8 12.2 10 (≤25) 50 (≤150) 5 6 9 1 0.1 8

BZX384B13 W K 12.7 13.3 10 (≤3 0) 50 (≤170) 5 7 9 1 0.1 8

BZX384B15 W L 14.7 15.3 10 (≤30) 50 (≤200) 5 7 9 1 0.05 0.7VZnom.

BZX384B16 WM 15.7 16.3 10 (≤40) 50 (≤200) 5 8 9.5 1 0.05 0.7VZnom.

BZX384B18 WN 17.6 18.4 10 (≤45) 50 (≤225) 5 8 9.5 1 0.05 0.7VZnom.

BZX384B20 WO 19.6 20.4 15 (≤55) 60 (≤225) 5 8 10 1 0.05 0.7VZnom.

BZX384B22 W P 21.6 22.4 20 (≤5 5) 60 (≤250) 5 8 10 1 0.05 0.7VZnom.

BZX384B24 WR 23.5 24.5 25 (≤70) 60 (≤250) 5 8 10 1 0.05 0.7VZnom.

BZX384B27 W S 26.5 27.5 25 (≤8 0) 65 (≤300) 2 8 10 0.5 0.05 0.7VZnom.

BZX384B30 WT 29.4 30.6 30 (≤80) 70 (≤300) 2 8 10 0.5 0.05 0.7VZnom.

BZX384B33 WU 32.3 33.7 35 (≤80) 75 (≤325) 2 8 10 0.5 0.05 0.7VZnom.

BZX384B36 W W 35.3 36.7 35 (≤90) 80 (≤350) 2 8 10 0.5 0.05 0.7VZnom.

BZX384B39 WX 38.2 39.8 40 (≤130) 80 (≤350) 2 10 12 0.5 0.05 0.7VZnom.

BZX384B43 WY 42.1 43.9 45 (≤150) 85 (≤375) 2 10 12 0.5 0.05 0.7VZnom.

BZX384B47 WZ 46.1 47.9 50 (≤170) 85 (≤375) 2 10 12 0.5 0.05 0.7VZnom.

BZX384B51 X1 50.0 52.0 60 (≤180) 85 (≤400) 2 10 12 0.5 0.05 0.7VZnom.

BZX384B56 X2 54.9 57.1 70 (≤200) 100 (≤425) 2 9 11 0.5 0.05 0.7VZnom.

BZX384B62 X3 60.8 63.2 80 (≤215) 100 (≤450) 2 9 12 0.5 0.05 0.7VZnom.

BZX384B68 X4 66.6 69.4 90 (≤240) 150 (≤475) 2 10 12 0.5 0.05 0.7VZnom.

BZX384B75 X5 73.5 76.5 95 (≤255) 170 (≤500) 2 10 12 0.5 0.05 0.7VZnom.

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4Document Number 85764

Rev. 1.5, 08-Jul-04

VISHAY

BZX384-Series

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Forward characteristics

Figure 2. Admissible Power Dissipation vs. Ambient Temperature

Figure 3. Pulse Thermal Resistance vs. Pulse Duration

18114

100

150

200

250

18192

°C

18116

Figure 4. Dynamic Resistance vs. Zener Current

Figure 5. Capacitance vs. Zener Voltage

Figure 6. Dynamic Resistance vs. Zener Current

18117

18193

18119

VISHAY

BZX384-Series

Document Number 85764

Rev. 1.5, 08-Jul-04

Vishay Semiconductors

www.vishay.com

Figure 7. Dynamic Resistance vs. Zener Current

Figure 8. Thermal Differential Resistance vs. Zener Voltage

Figure 9. Dynamic Resistance vs. Zener Voltage

18120

°C/W

18121

18122

Figure 10. Temperature Dependence of Zener Voltage vs. Zener

Voltage

Figure 11. Change of Zener Voltage vs. Junction Temperature

Figure 12. Change of Zener Voltage vs. Junction Temperature

°C

18135

18124

18194

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6Document Number 85764

Rev. 1.5, 08-Jul-04

VISHAY

BZX384-Series

Vishay Semiconductors

Figure 13. Temperature Dependence of Zener Voltage vs. Zener

Voltage

Figure 14. Change of Zener voltage from turn-on up to the point of

thermal equilibrium vs. Zener voltage

Figure 15. Change of Zener voltage from turn-on up to the point of

thermal equilibrium vs. Zener voltage

ıC

18195

18196

18160

VISHAY

BZX384-Series

Document Number 85764

Rev. 1.5, 08-Jul-04

Vishay Semiconductors

www.vishay.com

18111

Figure 16. Breakdown Characteristics

18112

Figure 17. Breakdown Characteristics

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8Document Number 85764

Rev. 1.5, 08-Jul-04

VISHAY

BZX384-Series

Vishay Semiconductors

Package Di mens ions in mm (Inches)

18191

Figure 18. Breakdown Characteristics

17443

Cathode Band

0.3 (0.012)

2.85 (0.112)

2.50 (0.098)

1.95 (0.076)

1.60 (0.062)

1.1 (0.043)

1.5 (0.059)

0.15 (0.006) max.

1.25 (0.049) max.

0.1 (0.004) max. 0.25 (0.010) min.

1.60 (0.062)

1.40 (0.055)

0.39 (0.015)

ISO Method E

Mounting Pad Layout

VISHAY

BZX384-Series

Document Number 85764

Rev. 1.5, 08-Jul-04

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Prot ection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to impr ove te chnical design

and may do so without further notic e.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423