2011-08-05
1
SMBTA56/MMBTA56
1
2
3
PNP Silicon AF Transistor
• Low collector-emitter saturation voltage
• Complementary type: SMBTA06 / MMBTA06(NPN
)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBTA56/MMBTA56 s2G 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 80 V
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 4
Collector current IC500 mA
Peak collector current, tp ≤ 10 ms ICM 1 A
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 79°C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 215 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-08-05
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SMBTA56/MMBTA56
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 80 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 4 - -
Collector-base cutoff current
VCB = 80 V, IE = 0
VCB = 80 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Collector-emitter cutoff current
VCE = 60 V, IB = 0
ICEO - - 0.1
DC current gain1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
100
100
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
VCEsat - - 0.25 V
Base-emitter voltage1)
IC = 100 mA, VCE = 1 V
VBE(ON) - - 1.2
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 7 - pF
1Pulse test: t < 300µs; D < 2%
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SMBTA56/MMBTA56
DC current gain hFE = ƒ(IC)
VCE = 1 V
EHP00852
10
h
C
FE
10
1
10
-1 0
Ι
100 C
25 C
-50 C
1
10
2
10
3
10
mA
2
10
3
10
0
10
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0.0
10
EHP00850
CEsat
V
0
3
10
Ι
C
mA
1
10
2
10
C
5
5
100
25 C
-50C
0.5 V 1.0
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
EHP00849
10
0V
BEsat
1.5
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
mA
5
10
2
100 ˚C
25 ˚C
-50 ˚C
Collector current IC = ƒ(VBE)
VCE = 1V
EHP00846
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
100 C
25 C
-50 C
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SMBTA56/MMBTA56
Collector cutoff current ICBO = ƒ(TA)
VCB = 80 V
EHP00851
10
0C
A
150
nA
CBO
10
4
1
10-1
5
50 100
5
102
100
5
Ι
T
max
typ
5
103
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10
EHP00848
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
55
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
5
10
15
20
25
30
35
40
45
50
55
pF
65
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
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SMBTA56/MMBTA56
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
4
10
Ptotmax/ PtotDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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SMBTA56/MMBTA56
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-08-05
7
SMBTA56/MMBTA56
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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