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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. * * * * * * 10A, 400V, RDS(on) = 0.54 @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-220 G DS GD S IRF Series TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current IRF740B IRFS740B Units V A 400 - Continuous (TC = 100C) 10 10 * 6.3 6.3 * A 40 40 * A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 13.4 5.5 -55 to +150 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 30 V 450 mJ 134 1.08 44 0.35 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case RCS Thermal Resistance, Case-to-Sink RJA Thermal Resistance, Junction-to-Ambient (c)2001 Fairchild Semiconductor Corporation IRF740B 0.93 IRFS740B 2.86 Units C/W 0.5 -- C/W 62.5 62.5 C/W Rev. A, November 2001 IRF740B/IRFS740B November 2001 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 400 -- -- V -- 0.4 -- V/C VDS = 400 V, VGS = 0 V -- -- 10 A VDS = 320 V, TC = 125C -- -- 100 A Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.43 0.54 -- 9.6 -- S -- 1400 1800 pF -- 150 195 pF -- 35 45 pF -- 20 50 ns -- 80 170 ns -- 125 260 ns -- 85 180 ns -- 41 53 nC -- 7 -- nC -- 17 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A gFS Forward Transconductance VDS = 40 V, ID = 5.0 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 10 A, RG = 25 (Note 4, 5) VDS = 320 V, ID = 10 A, VGS = 10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM -- -- 40 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 10 A, dIF / dt = 100 A/s (Note 4) -- 330 -- ns -- 3.57 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 7.9mH, IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF740B/IRFS740B Electrical Characteristics IRF740B/IRFS740B Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2.4 1 10 VGS = 10V IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 2.0 1.6 VGS = 20V 1.2 0.8 0.4 0 10 25 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0.0 0 5 10 15 20 25 30 35 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2500 12 VDS = 80V 10 Capacitance [pF] 2000 Ciss 1500 Coss 1000 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] VDS = 200V VDS = 320V 8 6 4 2 Note : ID = 10 A 0 0 -1 10 0 10 1 10 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF740B/IRFS740B Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 5.0 A 0.5 0.0 -100 200 Figure 7. Breakdown Voltage Variation vs Temperature 1 10 1 ms 10 ms DC 0 10 Notes : 200 1 ms 10 ms 100 ms DC 0 10 -1 Notes : 10 o o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 150 100 s 10 s ID, Drain Current [A] ID, Drain Current [A] 100 s 10 100 Operation in This Area is Limited by R DS(on) 10 Operation in This Area is Limited by R DS(on) 1 50 Figure 8. On-Resistance Variation vs Temperature 2 2 0 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 -50 o o -2 0 1 10 2 10 3 10 10 VDS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for IRF740B Figure 9-2. Maximum Safe Operating Area for IRFS740B 10 ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [] Figure 10. Maximum Drain Current vs Case Temperature (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 (Continued) 0 D = 0 .5 N o te s : 1 . Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .2 10 0 .1 -1 0 .0 5 PDM 0 .0 2 JC (t), T h e r m a l R e s p o n s e 10 IRF740B/IRFS740B Typical Characteristics Z 0 .0 1 t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C (t) = 2 .8 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 JC (t), T h e r m a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for IRF740B PDM 0 .0 1 Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for IRFS740B (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF740B/IRFS740B Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp (c)2001 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, November 2001 IRF740B/IRFS740B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF740B/IRFS740B Package Dimensions TO - 220 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 (Continued) 3.30 0.10 TO-220F 10.16 0.20 2.54 0.20 o3.18 0.10 (7.00) (1.00x45) 15.87 0.20 15.80 0.20 6.68 0.20 (0.70) 0.80 0.10 ) 0 (3 9.75 0.30 MAX1.47 #1 +0.10 0.50 -0.05 2.54TYP [2.54 0.20] 2.76 0.20 2.54TYP [2.54 0.20] 9.40 0.20 4.70 0.20 0.35 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A, November 2001 IRF740B/IRFS740B Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. 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