IRF740B - ON SEMICONDUCTOR

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November 2001

Rev. A, November 2001

IRF740B/IRFS740B

400V N-Ch annel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

Features

• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V

• Low gate charge ( typical 41 nC)

• Low Crss ( typical 35 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature

Thermal Characteristi cs

Symbol Parameter IRF740B IRFS740B Units

VDSS Drain-Source Volt age 400 V

IDDrain Current - Continuous (TC = 25°C) 10 10 * A

- Continuous (TC = 100°C) 6.3 6.3 * A

IDM Drain Current - Pulsed (Note 1) 40 40 * A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ

IAR Avalanche Current (Note 1) 10 A

EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns

PDPower Dissipation (TC = 25°C) 134 44 W

- Derate above 25°C 1.08 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter IRF740B IRFS740B Units

RθJC Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

TO-220

IRF Series

GSD

TO-220F

IRFS Series

Rev. A, November 2001

IRF740B/IRFS740B

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temper ature

2. L = 7.9mH, IAS = 10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Sta rting TJ = 25°C

4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA400 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 0.4 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 10 µA

VDS = 320 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 5.0 A -- 0.43 0.54 Ω

gFS Forward Transconductance VDS = 40 V, ID = 5.0 A -- 9.6 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1400 1800 pF

Coss Output Capacitance -- 150 195 pF

Crss Reverse Transfer Capacit ance -- 35 45 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 200 V, ID = 10 A,

RG = 25 Ω

-- 20 50 ns

trTurn-On Rise Time -- 80 170 ns

td(off) Turn-Off De l a y Time -- 125 260 ns

tfTurn-Off Fa ll Time -- 85 180 n s

QgTotal Gate Charge VDS = 320 V, ID = 10 A,

VGS = 10 V

-- 41 53 nC

Qgs Gate-Source Charge -- 7 -- nC

Qgd Gate-Drain Charge -- 17 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 10 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = 10 A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, I S = 10 A,

dIF / dt = 100 A/µs

-- 330 -- ns

Qrr Reverse Recovery Charge -- 3.57 -- µC

IRF740B/IRFS740B

0 5 10 15 20 25 30 35

0.0

0.4

0.8

1.2

1.6

2.0

2.4

VGS = 20V

VGS = 10V

! No te : TJ = 25"

RDS(ON) [#],

Drain-Source O n-Resistance

ID, Drain Current [A]

246810

10-1

100

101

150oC

25oC

-55oC

! Notes :

1. VDS = 40V

2. 2 50$s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

10-1 100101

10-1

100

101

V GS

Top : 1 5 .0 V

1 0 .0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

5 .5 V

Bottom : 5.0 V

! Notes :

1. 250$s P ulse Test

2. TC = 25"

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45

VDS = 200V

VDS = 80V

VDS = 320V

! Note : ID = 10 A

VGS, G ate-Source Voltage [V]

QG, To ta l G a te C h a rg e [n C ]

10-1 100101

500

1000

1500

2000

2500

3000

Coss

Ciss = Cgs + Cgd (C ds = shorted)

Coss = Cds + Cgd

Crss = Cgd

! Notes :

1. VGS = 0 V

2. f = 1 MH z

Crss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

10-1

100

101

150"

! Notes :

1. VGS = 0V

2. 250$s P ulse Test

25"

IDR, Reverse D rain Current [A]

VSD, Source-Drain voltage [V]

Typical Characteristics

Figure 5. Capacitance C haracteristi cs Figure 6. Gate Charge Characteristics

Figure 3. On-Resistanc e Variation vs

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation with Sour ce Cur rent

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s

IRF740B/IRFS740B

100101102103

10-2

10-1

100

101

102

100 ms

10 ms1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature ["

]

100101102103

10-1

100

101

102

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

! No te s :

1 . V GS = 10 V

2 . ID = 5.0 A

RDS(ON) , (Norm alized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

N o te s :

1 . V GS = 0 V

2 . ID = 250 $A

BV DSS , (No r ma lized )

Drain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9 -1. M aximum Safe Op er at in g Are a

for I R F 7 40B

Figure 10. Maximum Drain Curren t

vs Case Temperature

Figu re 7. Breakdo w n Vol ta ge Variation

vs Temperature Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for IRFS740B

IRF740B/IRFS740B

Typical Characteristics (Continued)

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

! Notes :

1 . Z%JC(t) = 0.9 3 "/W Ma x .

2 . Du ty Fa c to r, D = t1/t2

3 . TJM - T C = PDM * Z %JC(t)

s in gle puls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), T he rma l Res p o ns e

t1, S quare Wave Pulse D uration [sec]

Figure 11 -1 . Tr ansient Therm al Response Cur ve for IRF740B

PDM

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

! Notes :

1 . Z%JC(t) = 2.8 6 "/W Ma x .

2 . Du ty Fa c to r, D = t1/t2

3 . TJM - T C = PDM * Z %JC(t)

s in g le p uls e

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), T he rma l Res p o ns e

t1, S quare Wave Pulse D uration [sec]

Figure 11-2. Transient Thermal Response Curve for IRFS740B

PDM

IRF740B/IRFS740B

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & W aveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

IRF740B/IRFS740B

Peak Diode Recovery dv /d t Test Ci rcuit & Wavefor m s

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

IRF740B/IRFS740B

Package Dimensions

TO - 220

Dimensions in Millimeters

IRF740B/IRFS740B

Package Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

3.30 ±0.10

15.80 ±0.20

15.87 ±0.20

6.68 ±0.20

9.75 ±0.30

4.70 ±0.20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.20

0.35 ±0.10

ø3.18 ±0.10

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

0.50 +0.10

–0.05

TO-220F

Dimensions in Millimeters

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