Rugged Power MOSFETs IRF540R, IRF541R IRF542R, IRF543R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 100V-60V fos(on) = 0.085Q and 0.110 Features: BH Single pulse avalanche energy rated @ SOA is power-dissipation limited lM Nanosecond switching speeds @ Linear transfer characteristics Hf High input impedance The IRF540R, IRF541R, IRF542R and IRF543R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown File Number 2009 TERMINAL DIAGRAM 0 9208-42658 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION avalanche mode of operation. These are n-channel en- cS SOURCE hancement-mode silicon-gate power field-effect transis- pRAIN ! tors designed for applications such as switching regulators, (FLANGE) -______ DRAIN switching converters, motor drivers, relay drivers, and driv- OC ers for high-power bipolar switching transistors requiring = => high speed and low gate-drive power. These types can be GATE operated directly from integrated circuits. TOP VIEW 9203-30528 pakane Pes are supplied in the JEDEC TO-220AB plastic JEDEC TO-220AB Absolute Maximum Ratings P. t IRF540R IRF541R IRFS42R IRF543R Units Ves Drain - Source Voltage @ 100 60 100 60 v Vosr Drain - Gate Voltage (Res == 20 KQ) 100 60 100 60 Vv lo @ Te = 25C Continuous Drain Current 27 27 24 24 A lb @ Tc = 100C Continuous Drain Current 17 17 15 15 A lo Pulsed Drain Current @ 108 108 96 96 A Ves Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 125 (See Fig. 14) w Linear Derating Factor 1.0 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 230 mj Tg Storage Temperature Range ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-92Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) t(RFS40R, IRFS41R IRF542R, IRF543R Parameter Type Min. | Typ. | Max. | Units Test Conditions BVpss_ Drain - Source Breakdown Voltage IRF540R = IRF542R 100 _ v Ves = OV IRFS41R = IRF543R 60 - - Ip = 250uA Vesun Gate Threshold Voltage ALL 2.0 = 40 Vos = Vas, Ip = 250 A loss Gate-Source Leakage Forward ALL = _ 500 nA Ves = 20V less Gate-Source Leakage Reverse ALL al _ ~500 nA Ves =-20V loss Zero Gate Voltage Drain Current = _ 250 LA Vos = Max. Rating, Ves = 0V ALL | 1000 | uA | Vos = Max, Rating x 0.8, Vas = OV, Te = 125C lot On-State Drain Current @ IRF540R | 97 _ _ A Eee Vos > lptom X Roston) max. Ves = 10V infsagni 24 | ~ | A Rosiom Static Drain-Source On-State IRF540R *" Resistance iRFS4iR| | 997 | 0.085) 9 _ _ IAFS4oR Ves = 10V, In = 15A IRF543R _ 0.09 0.11 Q Qts Forward Transconductance @ ALL 6.0 10 = SQ) | Vos > Inton X Rostonmax, lo = 15A Cus Input Capacitance ALL = 1275 = pF Ves = OV, Vos = 25V, f= 1.0 MHz Coss Output Capacitance ALL = 550 _ pF See Fig. 10 Crs Reverse Transfer Capacitance ALL = 160 = pF tation Turn-On Delay Time ALL 16 30 ns Vop = 30V, In = 15A, Zo = 4.70 t Rise Time ALL = 27 60 ns See Fig. 17 tam _ Turn-Off Delay Time ALL = 38 80 ns__| (MOSFET switching times are essentially t Fall Time ALL _ 14 30 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 38 60 nc Ves = 10V, lo = 34A, Vos = 0.8 Max. Rating. {Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL 17 nc essentially independent of operating ae RA oe? temperature.) Qga Gate-Drain (Miller) Charge ALL = 21 =_ nc Lo internal Drain inductance _ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL = 45 nH | Measured from the inductances, | drain jead, 6mm (0.25 in.) from package to Lo center of die. Ls Internal Source Inductance ALL _ 75 _ nH Measured from the 6 Ls source lead, 6mm (0.25 in.) from s package to source vice anes bonding pad. Thermal Resistance RuJG Junction-to-Case ALL = = 1.0 | C/W RinCS_ Case-to-Sink ALL _ 1.0 - C/W_|_ Mounting surface flat, smooth, and greased. RnJA _Junctlon-to-Ambient ALL _- - 80 C/W _| Free Air Operation Source-Drain Diode Ratings and Characteristics ts Continuous Source Current IRF640R| __ _ 97 A Modifled MOSFET symbol (Body Diode) IRF541R showing the Integral IRF542R 4 A reverse P-N junction rectifier. inFs4an| ~ | ~ | ? Isa -- Pulse Source Current IRFS40R | | aoa | A s (Body Diode) @ IRF541A IRF42R each-anese inFeagR| | ~ | % | A Veo _Diode Forward Voltage @ IRFS4OR _ _ 25 v_ | Te = 28C, ls =27A, Vas = OV Reegae| | | 23 V_ | Te = 25C, Is = 24, Vas = OV tr Reverse Recovery Time ALL = 500 = ns | Ti = 150C, |p = 27A, dir/dt = 100A/ys Qan Reverse Recovered Charge ALL = 2.9 = uC Ty = 150C, In = 27A, die/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time Is negligibie. Turn-on speed is substantially controlied by Ls + Lo. Ts = 25C to 150C. @ Pulse Test: Pulse width <= 300us, Duty Cycie s 2%. Repetitive Rating: Pulse width limited by max. Junction temperature. See Transient Thermal |mpedance Curve (Fig. 5). Voo = 26V, starting Ty = 28C, L = 440 wH, Ros = 502, Ipeax = 28A. See figures 15, 16. 6-93Rugged Power MOSFETs IRFS40R, IRF541R IRF542R, IRF543R 50 50 W0 us PULSE TEST f Vos > 'Dton) * 40 49 F Roston) max. a a 3 rs 2 s z < 0 < 30 5 z < = = = = 3 3; z 2 z 20 < 5 5 3 s 10 0 0 10 20 30 40 50 0 2 4 6 8 10 Vpg, ORAIN-TO-SOURCE VOLTAGE {VOLTS} Vgs. GATE-TO-SOURCE VOLTAGE (VOLTSI Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics vo00 500 OPERATION IN THIS AREA IS LIMITED 80 pis PULSE 200 = a BY Rostom 8 a & & 100 = & 3 = Ee ~ 350 z= z ws ec c 3 3 20 z z 5 5 To 25C s 2 Ty 1809C MAX STE Ringe 0K W SINGLE PULSE 2 IRFSAIR, SR 10 0 ' 2 3 4 5 10 2 5 10 20 $0 100 200 500 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. ORAIN.TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area 10 0.8 => 02 Pom Leo tj 4 01 ~ tg 0.05 1, DUTY FACTOR, O= it . IMPEDANCE} : 2. PER UNIT BASE = Rinjg = 1.0 DEG. CW. 3. Ty + Te * Pom 2tnclt). 0.02 ZepsctO/ Rey. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) 0.01 0-8 2 6 10-4 2 1o-t 2 6 10-2 2 197! 2 5 10 2 4 10 41, SQUARE WAVE PULSE OURATION (SECONDS) Fig, 5 Maximum Effective Tra Vs. Pulse Duration jent Thermal impedance, Junction-to-CasRugged Power MOSFETs IRF540R, IRF541R IRF542R, IRF543R 80 ys PULSE TEST ves Ty = 150C Gj, TRANSCONOUCTANCE (SIEMENS) Vos *!o1on) * Raston) max. lpg. REVERSE DRAIN CURRENT (AMPERES) 0 10 20 20 40 50 0 04 08 12 16 2.0 Ip. ORAIN CURRENT (AMPERES) Vgp. SOURCE-TO- DRAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 1.25 25 118 20 3 a (NORMALIZED) a 2 D> rs o Vos = 10V ( 1 ig = 16A 0.65 Os BV oss. ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) RDS(on). ORAIN-TO-SOURCE ON-STATE RESISTANCE 0.75 a 40 0 40 80 120 160 ~40 Q 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE {C} Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 -- Normalized On-Resistance Vs. Temperature 2000 Cigg = Cys + Cg, Cys SHORTED ip = 34a wo FOR TEST CI FIGURE 18 400 20 Cray = Cog -Vos* Cop C, f= 1 MHz 1600 Cons" Coat GEE a Cyst Cog a = 2 2 Vos = g 8 ean = (200 = Vos ~ = S$ Vou = 60V, IRFS40R, 542A = ws 2 FA 10 S 800 3 s 2 S 2 oS > Q 5 10 1 20 3% 30 38 (40 45 (0 0 20 40 60 a0 Vps, DRAIN-TO-SQURCE VOLTAGE (VOLTS) Qy. TOTAL GATE CHARGE (nC} Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source VoltageRugged Power MOSFETs IRF540R, IRF541R IRF542R, IRF543R 30 Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL T) = 250C. (HEATING - EFFECT OF 2.0 us PULSE IS MINIMAL.) a = = 3 w 24 3 2 a 5 ! & B02 e = 18 IRFS40R, 541R z sg s Vgg = tov C we 2 3 a c i > x= 3 a =) z 12 Ey Z = 1 <0 J a a a 5 s + _ pet ay 6 B a , 6 o 20 40 60 a0 100 120 By 50 Hr) 100 125 150 Ig. DRAIN CURRENT (AMPERES) Tp, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature VARY tp TO OBTAIN REQUIRED PEAK IL S2C3- 42659 Pa. POWER DISSIPATION (WATTS) Fig. 15 Unclamped Energy Test Circuit @ 20 46 60 80 100 120 146 Tc, CASE TEMPERATURE (C) Fig. 14 ~ Power Vs. Temperature Derating Curve 92CS- 42660 Fig. 16 Unciamped Energy Wavetorms CURRENT )+Vps REGULATOR (ISOLATED SUPPLY) L SAME TYPE 30V i2v AS DUT BATTERY ADJUST RL TO OBTAIN $ 390) SPECIFIED Ip Vos VGs Feuise ( bey) out | GENERATOR oT SJ - source S| | oe -- O-Vps IMPE DANCE IG D Lo 4 J CURRENT CURRENT _______. SHUNT SHUNT = 92GS-44103 Fig. 17 Switching Time Test Circuit Fig. 18 Gate Charge Test Circuit 6-96