RF01091-2, Rev. B (12/4/13) ©2013 Microsemi Corporation Page 1 of 4
One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com
USB50403C – USB50424C
Available Bidir ectional TV Sar r ay
DESCRIPTION
This USB50403C – USB50424C Transient Voltage Suppressor (TVS) family is packaged in a
SOT-143 configuration giving protection to 1 bidi r ect i onal data or interface l in e. It is designed
for use i n applicat ion s where protec tion is required at t he board l evel from voltage transients
caused by elec trostatic discharge (ESD) as defined in IEC 61000–4-2, el ect r i cal fast t r ansient s
(EF T) per IEC 61000 -4-4 and secondary effects of lightnin g. It i s also avai l abl e in RoHS
compliant versions.
These TVS ar r ays have a p eak po wer rating of 500 watts for an 8/20 µsec pulse. This array is
sui table for protection of sensitive cir cuit ry cons isting of TTL, CM OS, DRAM’s, SRAM’s,
HCM OS, HSIC micropro ce sso rs, and Universal Serial Bus (USB) and I/O transceivers .
SOT-143
Package
Also available in:
Unidire ct ional SOT-143
(s urfac e mount )
USB50403 – USB50424
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Protects 1 bidir ect io na l line.
• Surge protection per IEC 61000-4-2 and IEC 61000-4-4.
• Provides electrically isolated protection.
• UL 94V-0 flammability classification.
• Ultra low capacitance, 3 pF per line pair.
• Ultra low leakage.
• RoHS compliant versions available.
APPLICATIONS / BENE FITS
• EIA-RS485 data rates: 5 Mbs
• 10 Base T Ethernet.
• USB data rate: 900 Mbs
MAXIMUM RATING S
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road B usiness Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameter s/Test Conditions
Symbol
Value
Unit
Junction and Storage Tem perature
TJ and TSTG
-55 to +150
ºC
Peak Pulse Power @ 8/20
µ
s (see Figure 1)
PPP
500
W
Impulse Repetition Rate
df
< .01
%
Total Capacitance (f = 1 MHz) @ 0 V
CT
3
pF
Solder Temperature @ 10 s
260
oC
RF01091-2, Rev. B (12/4/13) ©2013 Microsemi Corporation Page 2 of 4
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USB50403C – USB50424C
M ECHANICAL a nd PACKAGING
• CASE: Molded SOT-143 surface mount
• TERMINALS: Tin-lead or RoHS co mpl iant ann ealed matte-tin plating
• MARKING: See electric al characteristics table
• POLARITY: Pin #1 (Please refer to Schematic and Pad Layout for pin 1.)
• TAPE & REEL option: Per EIA standard 481-1-A. Consult factory for quantiti es
• WEIGHT: Approximately 0.035 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
USB 5 04 03 C (e3)
Rated for USB
applications
500W PPP Rating
4 Pin Package
RoHS Compliance
e3 = RoHS Compl iant
Blank = non-RoHS Compliant
Bidirectinal Designator
Rated Sta ndoff Voltage (VWM)
SYMBOL S & DEFINITI ONS
Symbol
Definition
αV(BR) Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that cau sed it expressed in %/°C or mV/°C.
CT
Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.
ID
Standby Current: The current through the device at rated stand-off voltage.
V(BR)
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown regi on.
VC
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
VWM Working Standoff Voltage: The maxim um-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
ELECT RICAL CHARACTERISTICS
PART
NUMBER DEVICE
MARKING*
STAND-
OFF
VOLTAGE
VWM
Volts
BREAKDOWN
VOLTAGE
V(BR)
@1 m A
Volts
CLAMPING
VOLTAGE
VC
@ 1 Amp
(F igure 2)
Volts
CLAMPING
VOLTAGE
VC
@ 5 Amp
(F igure 2)
Volts
STANDBY
CURRENT
ID
@ VWM
µA
TOTAL
CAPACITANCE
(f= 1 MHz)
CT
@ 0 V
pF
TEMPERATURE
COEFFICIENT
OF V(BR)
α
V(BR)
mV/°C
MAX
MIN
MAX
MAX
MAX
MAX
MAX
USB50403C 53 3.3 4 8 11 200 3 -5
USB50405C
55
5.0
6.0
10.8
13
40
3
1
USB50412C 512 12.0 13.3 19 26 1 3 8
USB50415C 515 15.0 16.7 24 32 1 3 11
USB50424C
524
24.0
26.7
43
57
1
3
28
* Devic e marking has a dot suffix for the e# RoHS compliant option (e.g. 53●, 512●, etc.)
RF01091-2, Rev. B (12/4/13) ©2013 Microsemi Corporation Page 3 of 4
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USB50403C – USB50424C
GRAPHS
td - Pulse D uration - µs
FIGURE 1
P eak Pu lse Power vs Pulse Time
t – Time in microseconds
FIGURE 2
Pulse Waveform
PPP – P eak P ul se P ower - kW
I
PP
– Peak Pulse Current - %I
PP
RF01091-2, Rev. B (12/4/13) ©2013 Microsemi Corporation Page 4 of 4
One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support@microsemi.com
USB50403C – USB50424C
PACKAGE DIM ENSIONS
SCHEMATIC AND PAD LAYOUT
Schematic
Dimensions
Ltr
Inch
Millimeters
Min
Max
Min
Max
A
0.890
1.120
22.61
28.45
A1
0.013
0.100
0.330
2.54
B
0.760
0.940
19.30
23.88
B1
0.370
0.510
9.40
12.95
C
0.085
0.180
2.16
4.57
D
2.800
3.040
71.12
77.22
E
1.200
1.400
30.48
35.56
e1
1.920 BSC
48.26 BSC
e2
0.200 BSC
5.08 BSC
H
2.100
2.640
53.34
67.06
L
0.55 REF
13.97 REF
S
0.450
0.600
11.43
15.24
Dimensions
Ltr
Inch
Millimeters
Typ
Typ
A
0.079
2.00
B
0.071
1.80
C
0.047
1.20
C1
0.033
0.85
D
0.112
2.85
E
0.075
1.90
F
0.108
2.75
G
0.310
0.80
H
0.033
0.85
J
0.041
1.05
