Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH12N300 IXBT12N300 VCES = 3000V IC110 = 12A VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25C to 150C 3000 V VCGR TJ = 25C to 150C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Transient 30 V IC25 IC110 ICM TC = 25C TC = 110C TC = 25C, 1ms 30 12 100 A A A SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 30 Clamped Inductive Load ICM = 30 VCES 2400 A V PC TC = 25C 160 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 C C 1.13/10 Nm/lb.in. 6 4 g g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 G Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 3000 VGE(th) IC = 250A, VCE = VGE 3.0 G ICES VCE = 0.8 * VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 12A, VGE = 15V, Note 1 2.8 TJ = 125C V 25 A 1 mA TJ = 125C 3.5 C (TAB) G = Gate E = Emitter C = Collector TAB = Collector Features z z z 100 nA 3.2 V V z z High Blocking Voltage International Standard Packages Anti-Parallel Diode Low Conduction Losses Low Gate Drive Requirement High Power Density Applications: z z z z z (c) 2009 IXYS CORPORATION, All Rights Reserved E Advantages V 5.0 C (TAB) E TO-268 (IXBT) z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) C Switched-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches DS100120(03/09) IXBH12N300 IXBT12N300 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS 6.5 IC = 12A, VCE = 10V, Note 1 TO-247 (IXBH) Outline 10.8 S 1290 pF 56 pF Cres 19 pF Qg 62 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz 13 nC Qgc 8.5 nC td(on) 64 ns 140 ns 180 ns 540 ns 65 ns 395 ns 175 ns 530 ns tr td(off) tf td(on) tr td(off) tf IC = 12A, VGE = 15V, VCE = 1000V Resistive Switching Times, TJ = 25C IC = 12A, VGE = 15V VCE = 1250V, RG = 10 Resistive Switching Times, TJ = 125C IC = 12A, VGE = 15V VCE = 1250V, RG = 10 RthJC RthCS 0.78 (TO-247) 0.21 C/W C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXBT) Outline Reverse Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 12A, VGE = 0V 2.1 V trr IF = 6A, VGE = 0V, -diF/dt = 100A/s 1.4 s IRM VR = 100V, VGE = 0V 21 A Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBH12N300 IXBT12N300 Fig. 1. Output Characteristics @ 25C 24 Fig. 2. Extended Output Characteristics @ 25C 240 VGE = 25V 20V 15V 22 20 200 20V 180 16 10V 14 IC - Amperes IC - Amperes 18 12 10 8 6 160 140 15V 120 100 80 10V 60 4 40 2 20 5V 0 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20 22 24 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125C Fig. 4. Dependence of VCE(sat) on Junction Temperature 24 20 1.8 I 1.6 VCE(sat) - Normalized 16 14 10V 10 28 VGE = 15V 1.7 18 12 26 1.9 VGE = 25V 20V 15V 22 IC - Amperes VGE = 25V 220 8 6 C = 24A 1.5 1.4 I C = 12A 1.3 1.2 1.1 1.0 I C = 6A 0.9 4 0.8 5V 2 0.7 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 40 6.0 36 TJ = 25C 5.5 32 28 IC - Amperes VCE - Volts 5.0 4.5 4.0 I C = 24A 3.5 24 20 16 TJ = 125C 25C - 40C 12 3.0 12A 8 2.5 4 6A 0 2.0 5 7 9 11 13 15 17 19 VGE - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved 21 23 25 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts IXYS REF: B_12N300(4P)03-05-09 IXBH12N300 IXBT12N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 18 36 TJ = - 40C 16 32 14 28 12 24 125C IF - Amperes g f s - Siemens 25C 10 8 6 TJ = 25C 20 12 4 8 2 4 0 0 0 5 10 15 20 25 30 35 40 45 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF - Volts IC - Amperes Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 16 f = 1 MHz VCE = 1kV 14 I C = 12A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts TJ = 125C 16 10 8 6 4 1,000 Cies Coes 100 2 0 Cres 10 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 35 1.00 30 Z(th)JC - C / W IC - Amperes 25 20 15 0.10 10 TJ = 125C 5 0 500 RG = 30 dV / dt < 10V / ns 1000 1500 2000 2500 3000 0.01 0.00001 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBH12N300 IXBT12N300 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 700 700 RG = 10 RG = 10 600 600 VGE = 15V VGE = 15V VCE = 1250V t r - Nanoseconds t r - Nanoseconds VCE = 1250V 500 400 I C = 24A 300 I C = 12A 200 500 TJ = 125C 400 300 200 TJ = 25C 100 100 0 0 25 35 45 55 65 75 85 95 105 115 6 125 8 10 12 14 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 140 550 110 I C = 24A, 12A 100 450 90 400 80 350 70 300 60 250 20 30 40 50 60 70 80 90 t f - Nanoseconds 120 600 180 I C = 12A 500 160 300 200 50 100 25 35 45 55 300 260 800 220 600 180 400 140 TJ = 125C, 25C 200 100 0 60 14 16 95 105 115 140 125 18 20 IC - Amperes (c) 2009 IXYS CORPORATION, All Rights Reserved 22 24 900 650 tf td(off) - - - - 600 VCE = 1250V 800 TJ = 125C, VGE = 15V 700 550 600 I C = 12A 500 500 450 400 400 I C 300 = 24A 350 200 300 100 250 10 20 30 40 50 60 70 80 90 t d(off) - Nanoseconds VCE = 1250V t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 10, VGE = 15V 12 85 700 t f - Nanoseconds tf 10 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 340 8 65 TJ - Degrees Centigrade 1400 6 150 I C = 24A Fig. 17. Resistive Turn-off Switching Times vs. Collector Current 1000 170 400 RG - Ohms 1200 190 VCE = 1250V t d(off) - Nanoseconds 600 10 24 td(off) - - - - RG = 10, VGE = 15V 700 130 VCE = 1250V 500 22 200 tf t d(on) - Nanoseconds t r - Nanoseconds 650 TJ = 125C, VGE = 15V 20 800 150 tr 18 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 750 700 16 IC - Amperes 0 100 RG - Ohms IXYS REF: B_12N300(4P)03-05-09