SD2931-10
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
ADVANCE DATA
νGOLDMETALLIZATION
νEXCELLENTTHERMAL STABILITY
νCOMMONSOURCE CONFIGURATION
νPOUT = 150W MIN. WITH 14 dB gain@175
MHz
νTHERMALLY ENHANCED PACKAGINGFOR
LOWERJUNCTION TEMPERATURES
DESCRIPTION
The SD2931-10 is a gold metallized N-Channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50V dc large
signal applicationsup to 230MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications.
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS (Tcase =25oC)
Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 125 V
VDGR Drain-Gate Voltage (RGS =1MΩ) 125 V
VGS Gate-Source Voltage ±20 V
IDDrain Current 20 A
PDISS Power Dissipation 389 W
TjMax. Operating Junction Temperature 200 oC
TSTG Storage Temperature -65 to 150 oC
THERMAL DATA
Rth(j-c)
Rth(c-s) Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance ∗0.45
0.2
oC/W
oC/W
* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M174
epoxy sealed
ORDER CODE BRANDING
SD2931-10 TSD2931-10
1. Drain 3.Gate
2. Source 4. Source
1/10
ELECTRICAL SPECIFICATION (Tcase =25o
C)
STATIC
Symbol Parameter Min. Typ. Max. Unit
V(BR)DSS VGS =0V I
DS = 100 mA 125 V
IDSS VGS =0V V
DS =50V 5 mA
I
GSS VGS = 20V VDS =0V 5 µA
V
GS(Q) * VDS = 10V ID= 250 mA 2.0 5.0 V
VDS(ON) VGS = 10V ID=10A 3.0 V
G
FS VDS = 10V ID=5A 5 mho
C
ISS VGS =0V V
DS = 50 V f = 1 MHz 480 pF
COSS VGS =0V V
DS = 50 V f = 1 MHz 190 pF
CRSS VGS =0V V
DS =50V f=1MHz 18 pF
*V
GS(Q) sorted with alpha/numeric code marked on unit.
DYNAMIC
Symbol Parameter Min. Typ. Max. Unit
POUT f = 175 MHz VDD =50V I
DQ = 250 mA 150 W
GPS f = 175 MHz VDD =50V P
out =150W I
DQ = 250 mA 14 15 dB
ηDf = 175 MHz VDD =50V P
out =150W I
DQ = 250 mA 55 65 %
Load
Mismatch f = 175 MHz VDD =50V P
out =150W I
DQ =250mA
All Phase Angles 10:1 VSWR
IMPEDANCEDATA
FREQ. ZIN (Ω)Z
DL (Ω)
30 MHz 1.7 - j 5.7 6.8 + j 0.9
175 MHz 1.2 - j 2.0 2.0 + j 2.4
REF. 7165489C
A 2.0 - 2.1 R 3.5 - 3.6
B 2.1 - 2.2 S 3.6 - 3.7
C 2.2 - 2.3 T 3.7 - 3.8
D 2.3 - 2.4 U 3.8 - 3.9
E 2.4 - 2.5 V 3.9 - 4.0
F 2.5 - 2.6 W 4.0 - 4.1
G 2.6 - 2.7 X 4.1 - 4.2
H 2.7 - 2.8 Y 4.2 - 4.3
J 2.8 - 2.9 Z 4.3 - 4.4
K 2.9 - 3.0 2 4.4 - 4.5
L 3.0 - 3.1 3 4.5 - 4.6
M 3.1 - 3.2 4 4.6 - 4.7
N 3.2 - 3.3 5 4.7 - 4.8
P 3.3 - 3.4 6 4.8 - 4.9
Q 3.4 - 3.5 7 4.9 - 5.0
VGS SORTS
SD2931-10
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0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f =1MHz
Capacitancevs Drain-Source Voltage
1 10 100 1000
Vds(V)
1
10
100
Ids(A)
(1) Current in this area may belimitedby Rds(on)
(1)
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20°C
Tc=+25 °C
Tc=+80°C
25 35 45 55 65 75 85
Tc, CASE TEMPERATURE (°C)
0.44
0.48
0.52
0.56
0.6
RTH(j-c) (°C/W)
Drain Current vs Gate Voltage
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.8
0.85
0.9
0.95
1
1.05
1.1
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Id =.25A
Id =.1A
Id =1A
Id =2A
Id =4A
Id =11A
Id =5A
Id =7A
Id =9A
Id =10A
TYPICAL PERFORMANCE
Gate-SourceVoltages vs CaseTemperature Maximum ThermalResistance vs Case
Temperature
DC Safe OperatingArea
SD2931-10
3/10
0 5 10 15 20 25
Pin, INPUT POWER(W)
0
50
100
150
200
250
Pout, OUTPUT POWER(W)
f=175Mhz
Idq=250mA
Pout=40V
Pout=50V
0 5 10 15 20 25
Pin, INPUT POWER(W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
Vdd=50V
Idq=250mA
f=175Mhz
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
Efficencyvs OutputPower
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
30
40
50
60
70
Nc, EFFICIENCY (%)
Vdd=50V
Idq=250mA
f=175Mhz
OutputPower vs Supply Voltage
24 28 32 36 40 44 48 52
Vdd,Drain Voltage(V)
0
50
100
150
200
250
Pout,Output Power(W)
Pin=2.5W
Pin=5W
Pin=10W
Idq=250mA
f=175Mhz
OutputPower vs Gate Voltage
-3 -2 -1 0 1 2 3
VGS, GATE-SOURCE VOLTAGE(V)
0
50
100
150
200
Pout, OUTPUT POWER (W)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
TYPICAL PERFORMANCE (175 MHz)
Power Gain vs Output Power
OutputPower vs Input PowerOutputPower vs InputPower
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
10
11
12
13
14
15
Gp, POWER GAIN (dB)
Vdd=50V
Idq=250mA
f=175Mhz
SD2931-10
4/10
175 MHz TestCircuitSchematic(ProductionTest Circuit)
VG+50V
Note : Alldimensions in inches REF. 1021579C
T1 4:1 Transformer, 25 ohm Flexible Coax .090OD 6 ” Long
T2 1:4 Transformer, 25 ohm Semi-RigidCoax .141 OD 6 ” Long
FB1 Toroid X2, 0.5” OD .312” ID 850u 2 Turns
FB2, FB3 VK200
FB4 Shield Bead, 1” OD 0.5” ID 850u 3 Turns
L1 1/4Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12 ” Long
PCB 0.062” WovenFiberglass, 1 oz. Copper, 2 Sides, er = 2.55
R1, R3 470 ohm 1W Chip Resistor R4 20K ohm 10 Turn Potentiometer
R2 360 ohm 1/2W Resistor R5 560 ohm 1W Resistor
C1, C11 470 pF ATCChip Cap C7 30 pF ATCChip Cap
C2 43 pF ATCChip Cap C10 91 pF ATC Chip Cap
C3, C8, C9 Arco 404, 12-65 pF C12, C15 1200 pF ATC Chip Cap
C4 Arco 423, 16-100 pF C13, C14 0.01 uF / 500V Chip Cap
C5 120 pF ATCChip Cap C16, C17 0.01 uF / 500V Chip Cap
C6 0.01 uF ATCChip Cap C18 10 uF 63V Electrolytic Capacitor
175 MHz TestCircuitComponentPart List
SD2931-10
5/10
175 MHz TestCircuitPhotomaster
175 MHz TestCircuit
SD2931-10
6/10
0.01 0.06 0.11 0.16 0.21 0.25 0.3013 0.35 0.40
Pin, INPUT POWER (W)
0
50
100
150
200
250
Pout, OUTPUT POWER(W)
Vdd = 50V
f = 30 MHz
IDQ = 250 mA
Vdd = 40V
0 50 100 150 200
Pout, OUTPUT POWER (W)
26.5
27
27.5
28
28.5
PG, POWER GAIN (dB)
f= 30 MHz
VDD= 50 V
IDQ= 250 mA
PowerGain vs OutputPower
TYPICALPERFORMANCE (30 MHz)
OutputPower vs InputPower
0 50 100 150 200
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
Efficiency(%)
f= 30 MHz
VDD = 50 V
IDQ = 250 mA
OutputPowervs SupplyVoltage
24 28 32 36 40 44 48 52
VDD, SUPPLY VOLTAGE(V)
0
50
100
150
200
Pout, OUTPUT POWER(W)
f = 30 MHz
IDQ = 250 mA
Pin=.31 W
Pin=.22 W
Pin=.13 W
Efficency vs OutputPower
0123456
VGS GATE-SOURCEVOLTAGE (V)
0
50
100
150
200
Pout, OUTPUT POWER (W)
VDD = 50 V
IDQ = 250 mA
f = 30 MHz
Pin = Constant
T= -20 °C
T= +25 °C
T= +80 °C
OutputPower vs GateVoltage
SD2931-10
7/10
30 MHz TestCircuit Schematic(Engineering TestCircuit)
V+G+50V
30 MHz TestCircuit Component PartList
T1 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15” Long
T2 1:4 Transformer,50 ohm Flexible Coax .225OD 15” Long
FB1 Toroid, 1.7” OD.30” ID 220u4 Turns
FB2 Surface Mount EMI Shield Bead
FB3 Toroid, 1.7” OD.300” ID 220u3 Turns
RFC1 Toroid, 0.5” OD 0.30” ID, 125u4 turns 12 awg wire
PCB 0.062” WovenFiberglass, 1 oz. Copper,2 Sides, er= 2.55
C1, C4, C6, C7, C8, 0.01uF ATC Chip Cap C5 470 pF ATC Chip Cap
C9, C11, C12, C13 0.01 uF ATC Chip Cap C10 10 uF 63V Electrolytic Capacitor
C2, C3 750pF ATC Chip Cap C14 100 uF 63V Electrolytic Capacitor
R1, R3 1K ohm 1W ChipResistor R2 680 ohm 3W Wirewound Resistor
SD2931-10
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.56 5.84 0.219 0.230
B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130
1011000D
M174 (.500 DIA 4L N/HERM W/FLG) MECHANICALDATA
Controlling Dimension in Inches
SD2931-10
9/10
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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SD2931-10
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