electronics inc. MORE HYPERABRUPT TUNING DIODES SERIES MV1401-MV1412 The large capacitance tuning ratio in the hyperabrupts listed here make them suitable for broad band tuning applications. Their large vaiues of nominal capacitance are for AM applications with the lower capacitance types for use at higher frequencies. Closer tolerance values of capacitance colMEDE Md N eee canbe specified as well as matched sets. The hyperabrupts can be ordered _1- Saas t as chips by designating chip after the Type No. for hybrid applications. WM ee to M __ | Oo MAXIMUM RATINGS 507 po1s Rating Symbol Value Units [Dimensions| Min Max Min Max L 0.300 0.300 Reverse Voltage VR 12 Volts M 1.000 1.000 Device Dissipation @ Ta=25C PD 400 mw N 0.019 | 0.021 | 0019 | 0.021 0.092, | 0.104 [ 0.108 | 0.140 Junction Temperature TW +175 C Dimensions innches, toconvert to millimeters, multiply by 25.4 Storage Temperature Range Tstg 65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic All Types Test Conditions Symbol Min Typ Max Unit Reverse Breakdown Voltage IR = 10 M@ADC BYR 12 _ = Vde Reverse Voltage Leakage Current VR=10Vde, TA=25C 'R _ 0.01 Adc Series Inductance f = 250 MHz, lead length 1/16 ts _ 5.0 _ nH Case Capacitance f = 1 MHz, lead length 1/16" Cc -- 0.20 pF Mv1401* MVt MvV1403 Mv1 Mv1 MV1406 1 MV1 MV1 MvV141 MV1411 MvV141 Diode Cap. (CT)** pF @ 2V/1 MHz Nom Max 360 175 1 1 1 10 12 *CT and TR for MV1401 measured at 1V instead of 2V as for other Type Nos. **To order devices with CT Nom +10% add suffix A, 5% add Suffix B MATCHING - To order sets matched to 3%, specify number of diddes per set and add suffix M; i.e. for 3 matched diodes, add Suffix 3M, etc. Tuning Ratio (TR) C2/C10 @ 1 MHz Fig. of Merit (Q) @ 2V/1 MHz Min 200 200 (VIS U MANUFACTURED BY lectranics inc. 59 op m oO om \e) Pa cS