2007-08-09
1
BCV61
NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and VBE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
1
2
3
4
EHA00012
C2 (1)
Tr.2Tr.1
C1 (2)
E1 (3) E2 (4)
Type Marking Pin Configuration Package
BCV61
BCV61B
BCV61C
1Js
1Ks
1Ls
1 = C2
1 = C2
1 = C2
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
SOT143
SOT143
SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
(transistor T1)
VCEO 30 V
Collector-base voltage (open emitter)
(transistor T1)
VCBO 30
Emitter-base voltage VEBS 6
DC collector current IC100 mA
Peak collector current ICM 200
Base peak current (transistor T1) IBM 200
Total power dissipation, TS = 99 °C Ptot 300 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2007-08-09
2
BCV61
Thermal Resistance
Junction - soldering point1) RthJS ≤170 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 30 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 30 V, IE = 0
ICBO - - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO - - 5 µA
DC current gain2)
IC = 0.1 mA, VCE = 5 V
hFE 100 - - -
DC current gain2)
IC = 2 mA, VCE = 5 V
hFE
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
250
600
mV
Base-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
Base-emitter voltage2)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
700
770
BCV61A
BCV61B
BCV61C
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Puls test: t ≤ 300 µs, D = 2%
2007-08-09
3
BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
VBES
0.4
-
-
-
-
1.8
V
Matching of transistor T1 and transistor T2
at IE2 = 0.5mA and VCE1 = 5V
TA = 25 °C
TA = 150 °C
IC1 / IC2
-
0.7
0.7
-
-
-
-
1.3
1.3
-
Thermal coupling of transistor T1 and
transistor T2 1) T1: VCE = 5V
Maximum current of thermal stability of IC1
IE2 - 5 - mA
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 0.95 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 9 -
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 1 kHz, ∆ f = 200 Hz
F- 2 - dB
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e - 4.5 - kΩ
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e - 2 - 10-4
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e 100 - 900 -
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e - 30 - µS
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
2007-08-09
4
BCV61
Test circuit for current matching
EHN00001
T1 T2
...
A
21
43
VCE1
CO
VCO
V
C1
Ι
Ι
E2 = constant
Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV
Characteristic for determination of VCE1 at specified RE range with
IE2 as parameter under condition of IC1/IE2 = 1.3
EHN00002
T1 T2
...
A
21
43
V
CE1
C1
Ι
Ι
E2
= constant
R
E
R
E
Note: BCV61 with emitter resistors
2007-08-09
5
BCV61
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
)
0
1
2
3
4
5
6
7
8
9
10
pF
12
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
mW
350
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00942BCV 61
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
2007-08-09
6
BCV61
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RF s
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8
0.8
0.8 -0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25 MB
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4
±0.15
0.2
10˚ MAX.
A
1.3
±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
2007-08-09
7
BCV61
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
