DSS2x111-008A V RRM = 80 V I FAV = 2x 110 A V F = 0.72 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x111-008A Backside: isolated Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Housing: SOT-227B (minibloc) rIndustry standard outline rCu base plate internal DCB isolated rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current Ratings VF forward voltage min. typ. 80 V 8 mA VR = 80 V TVJ = 125 C 20 mA I F = 100 A TVJ = 25 C 0.84 V 1.04 V 0.72 V 0.94 V TC = 105C 110 A TVJ = 150C 0.49 V TVJ = 125 C I F = 200 A average forward current threshold voltage rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature V VR = I F = 100 A I FAV 80 TVJ = 25 C TVJ = 25 C I F = 200 A VF0 Unit max. rectangular d = 0.5 for power loss calculation only -40 2.1 m 0.40 K/W 150 C Ptot total power dissipation TC = 25 C 310 W I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45C 1400 A CJ junction capacitance VR = 12 V; f = 1 MHz TVJ = 25 C IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 2.1 nF 20110603a DSS2x111-008A Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 150 0.10 -40 Weight A K/W 150 30 C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm V ISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second 3000 t = 1 minute V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSS2x111-008A IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DSS2x111-008A Delivering Mode Tube Base Qty Code Key 10 489271 Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x111-008A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x111-008A 10000 100 200 TVJ = 175C 100 10 IR IF 1 CT 125C 1000 100C [mA] [A] 10 150C 0.1 [pF] 75C TVJ = 150C 125C 25C 0.01 50C 25C 1 0.0 TVJ = 25C 0.001 0.2 0.4 0.6 0.8 1.0 100 0 20 40 60 80 0 20 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 40 60 80 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 160 120 DC 120 100 d = 0.5 80 IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 P(AV) 80 60 [A] [W] 40 40 20 0 0 0 40 80 120 0 160 40 80 120 160 IF(AV) [A] TC [C] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 ZthJC 0.1 D = 0.5 0.33 0.25 0.17 [K/W] 0.08 Single Pulse 0.01 0.001 DSS2x111-008A 0.01 0.1 1 10 Note: All curves are per diode t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a