© 2017 IXYS CORPORATION, All Rights Reserved. DS100838C(11/17)
IXFT150N25X3HV
IXFH150N25X3
VDSS = 250V
ID25 = 150A
RDS(on)
9.0m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 1 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 7.7 9.0 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 250 V
VDGR TJ= 25C to 150C, RGS = 1M250 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 150 A
IDM TC= 25C, Pulse Width Limited by TJM 300 A
IATC= 25C75A
EAS TC= 25C 1.8 J
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C 735 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-247) 1.13 / 10 Nm/lb.in
Weight TO-268HV 4 g
TO-247 6 g
N-Channel Enhancement Mode
Avalanche Rated
X3-Class HiPerFETTM
Power MOSFET
TO-268HV (IXFT)
G
D (Tab)
S
TO-247 (IXFH)
G
S
DD (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT150N25X3HV
IXFH150N25X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 150 A
ISM Repetitive, pulse Width Limited by TJM 600 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 140 ns
QRM 770 nC
IRM 11 A
IF = 75A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 60A, Note 1 60 105 S
RGi Gate Input Resistance 1.5
Ciss 10.4 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1.6 nF
Crss 1.8 pF
Co(er) 650 pF
Co(tr) 2500 pF
td(on) 30 ns
tr 30 ns
td(off) 115 ns
tf 10 ns
Qg(on) 154 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 40 nC
RthJC 0.17 C/W
RthCS TO-247 0.21 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT150N25X3HV
IXFH150N25X3
Fig. 1. Output Characteristics @ TJ = 25
o
C
0
20
40
60
80
100
120
140
160
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
6V
5V
7V
8V
Fig. 3. Output Characteristics @ TJ = 125
o
C
0
20
40
60
80
100
120
140
160
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
4V
7V
6V
5V
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.
Junction Temperature
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 150A
I
D
= 75A
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 50 100 150 200 250 300 350 400 450 500
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ TJ = 25
o
C
0
50
100
150
200
250
300
350
400
450
500
550
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
V
GS(th)
BV
DSS
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT150N25X3HV
IXFH150N25X3
Fig. 7. Maximum Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
40
80
120
160
200
240
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
25
o
C
125
o
C
T
J
= - 40
o
C
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
100
200
300
400
500
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 11. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 125V
I
D
= 75A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1,000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 8. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
© 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_150N25X3 (27-S301) 5-24-17
IXFT150N25X3HV
IXFH150N25X3
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
Fig. 14. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
25μs
Fig. 13. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200 250
V
DS
- Volts
E
OSS
- MicroJoules
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT150N25X3HV
IXFH150N25X3
PINS:
1 - Gate 2 - Source
3 - Drain
TO-268HV Outline
TO-247 Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P O 0K M D B M
+
O J M C A M
+
12 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
