SS RANI BES TRS ne MPSH10 Discrete POWER & Signal Technologies MMBTH10 SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 yA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Abso I ute Maxi m u m Rati n gs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 25 Vv Vcso Collector- Base Voltage 30 Vv VeBo Emitter-Base Voltage 3.0 Vv Io Collector Current - Continuous 50 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPSH10 *MMBTH10 Pp Total Device Dissipation 350 225 mW Derate above 25C 28 1.8 mw/C Resc Thermal Resistance, Junction to Case 125 C/W Roa Thermal Resistance, Junction to Ambient 357 556 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Sem iconductor Corporation OLHLEIWIWN / OLHSdINElectrical Characteristics TA = 25C unless otherwise noted NPN RF Transistor (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Sustaining Voltage lo= 1.0 mA, Ig =0 25 Vv VeerjcBo Collector- Base Breakdown Voltage Ic = 100 pA, Ie = 0 30 Vv Visr)eB0 Emitter-Base Breakdown Voltage le= 10 pA, Ie = 0 3.0 Vv leBo Collector Cutoff Current Vop = 25 V, le = 0 100 nA leBo Emitter Cutoff Current Vep= 2.0 V, Ip =0 100 nA ON CHARACTERISTICS Hee DC Current Gain lo= 4.0 mA, Voce = 10 V 60 Veesaty Collector- Emitter Saturation Voltage lo= 4.0 mA, lp =0.4mA 0.5 Vv Vee(on Base-Emitter On Voltage lo= 4.0 mA, Voce = 10 V 0.95 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product lo= 4.0 mA, Voce = 10 V, 650 MHz f = 100 MHz Cob Collector-Base Capacitance Vog = 10 V, le = 0, f = 1.0 MHz 0.7 pF Crb Common-Base Feedback Capacitance | Vog = 10 V, le= 0, f = 1.0 MHz 0.35 0.65 pF rbC, Collector Base Time Constant lo= 4.0 mA, Vog = 10 V, 90 ps f = 31.8 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% Spice Model NPN (|s=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 No=2 Isc=0 Ikr=0 Ro=4 Cjo=1.042p Mijc=.2468 Vjc=.75 Fo=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p ltf=.27 Vtf=10 Xtf=30 Rb=10) OLHLEIWIWN / OLHSdINNPN RF Transistor (continued) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 100 Vce = 5V 80 60 40 20 0 01 02 05 1 2 5 10 20 50 I - COLLECTOR CURRENT (mA) hre- TYPICAL PULSED CURRENT GAIN Base-Emitter Saturation Voltage vs Collector Current B =10 ASE-EMITTER VOLTAGE (V) 2290 a Oo N B a SAT BE 2 o 1 10 20 I> - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature op = 30V logo COLLECTOR CURRENT (nA) 25 50 75 100 125 150 T,- AMBIENT TEMPERATURE () Collector-Emitter Saturation Voltage vs Collector Current o nD B =10 a o 2 a 1 10 20 I, - COLLECTOR CURRENT (mA) Versa COLLECTOR-EMITTER VOLTAGE (V) Base-Emitter ON Voltage vs Collector Current =5V 9 oo 2 nS o ot o 041 1 10 100 I, - COLLECTOR CURRENT (mA) Veeony BASE-EMITTER ON VOLTAGE (V) a Power Dissipation vs Ambient Temperature wo oa oO wo Qo oa 250 a a ho Qo ao Qo oa oO oa Pp, - POWER DISSIPATION (mW) a o oO 0 25 50 75 100 125 150 TEMPERATURE (C) OLHLEIWIWN / OLHSdINNPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Input Admittance a Nm Oo 40 |,p |- INPUT ADMITTANCE (mmhos) oo -40 -80 b ib -120 100 200 500 1000 { - FREQUENCY (MHz) Forward Transfer Admittance 120 bi 80 40 0 -40 cnet -80 lc=5mA sl- FORWARD ADMITTANCE (mmhos) -120 100 200 500 1000 f - FREQUENCY (MHz) Output Admittance a hm cee Ic =5mA a Oo oo & hm [Yop | OUTPUT ADMITTANCE (mmhos) oO u& oS Oo 200 500 1000 { - FREQUENCY (MHz) Reverse Transfer Admittance oo Voe= 10V Io=5mA oOo hm Gib \Y-o| - REVERSE ADMITTANCE (mmhos) ff a0 oS Oo 200 500 1000 { - FREQUENCY (MHz) OLHLEIWIWN / OLHSdINNPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance Nh & ce = Io=2mA a a ho oo hm Qo Oo [Y ie|- INPUT ADMITTANCE (mmhos) & a oS Oo 200 500 1000 { - FREQUENCY (MHz) Forward Transfer Admittance oO oO Vee =1 Ic=2mA Nm oO Oo nm a bie [Yte|- FORWARD ADMITTANCE (mmhos) oOo u& oS Oo 200 500 1000 f - FREQUENCY (MHz) lYoe |- OUTPUT ADMITTANCE (mmhos) = I) wo & ov o u& oS Oo 2 m a (es) = to Oo |Y-e| - REVERSE ADMITTANCE (mmhos) io os oS Oo Output Admittance Vog= 10V lo=2mA 200 500 1000 f - FREQUENCY (MHz) Reverse Transfer Admittance cea Io=2mA 200 500 1000 1 - FREQUENCY (MHz) OLHLEIWIWN / OLHSdINNPN RF Transistor (continued) Test Circuits Vog = 12 V ( 1000 pF ( 1000 pF T 0.8-10 pF 100 pF 0.8-10 pF Input 50 2 5.0-18 pF L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID ( 1000 pF tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side 680 2 T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) 175 pF | Oo 500 mHz Output l into 50Q (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF RFC cc cc FIGURE 2: 500 MHz Oscillator Circuit OLHLEIWIWN / OLHSdIN