TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices Qualified Level
2N1479 2N1480 2N1481 2N1482
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N1479
2N1481 2N1480
2N1482
Unit
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Emitter-Base Voltage VEBO 12 Vdc
Collector Current IC 1.5 Adc
Base-Current IB 1.0 Adc
Total Power Dissipation @ TA = 250C PT 1.0 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 35 0C/W
TO-5*
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc 2N1479, 2N1481
2N1480, 2N1482
V(BR)CEO
40
55
Vdc
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc 2N1479, 2N1481
VEB = 1.5 Vdc, IC = 0.25 mAdc 2N1480, 2N1482
V(BR)CEX
60
100
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc 2N1479, 2N1481
VCB = 50 Vdc 2N1480, 2N1482
ICBO
5.0
5.0
µAdc
Emitter-Base Cutoff Current
VEB = 12 Vdc IEBO 10 µAdc
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