Preview Products File Number 2291 Avalanche-Energy-Rated N-Channel Power MOSFETs 20 A and 17 A, 500 V fostom = 0.27 OA and 0.35 0 Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited Nanosecond switching speeds m Linear transfer characteristics a High input impedance The IRFP460 and IRFP462 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera- IRFP460, IRFP462 N-CHANNEL ENHANCEMENT MODE D Ss g2cs- 42658 TERMINAL DIAGRAM . - TERMINAL DESIGNATION tion. These are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, SOURCE relay drivers, and drivers for high-power bipolar switching CY J transistors requiring high speed and low gate-drive power. ee, ain These types can be operated directly from integrated 1" g circuits. TTAB) O The IRFP-types are supplied in the JEDEC TO-247 plastic ro to) ackage. 9 TOP VIEW \onre JEDEC TO-247 ABSOLUTE MAXIMUM RATINGS Parameter IRFP460 IRFP462 Units Ip @ Te = C Continuous Drain Current 20 v7 A Ip @ Tc = 100C Continuous Drain Current 12 n A ipM Pulsed Drain Current 80 68 A Pp @ Tc = 25C Max. Power Dissipation 250 w Linear Derating Factor 2.0 wre Ves Gate-to-Source Voltage +20 v Eas Single Pulse Avalanche Energy @ 960 mJ (See Fig. 14) lar Avalanche Current 20 A Ty Operating Junction 55 to 150 c TsTG Storage Temperature Range lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 11-21Preview Products IRFP460, IRFP462 ELECTRICAL CHARACTERISTICS At Case Temperature (T,) = 25C Unless Otherwise Specified Parameter Type Min. Typ. Max. | Units Test Conditions ~ BVpss__Drain-to-Source Breakdown Voltage ALL 500 ~ - v Veg = OV. Ip = 250 pA Ri Static Drain-to-Source IRFP460 - 0.24 0.27 DSion) G7, State Resistance @) f | Veg = 10V Ip = 1A IRFP462} 0.27 0.35 'plon) --On-State Drain Current @ IRFP460 | 20 _ _ A Vos > Ipton) * Rpston) Max. IRFP462| 17 Veg = 10V Vesith) Gate Threshold Voltage ALL | 2.0 - 40 V1 Vps = Ves Ip = 250 pA Ofs Forward Transconductance @ ALL 13 19 ~ SW) | Vog = 2 50V Ipg = 114 loss Zero Gate Voltage Drain Current ALL - => 250 yA Vps = Max. Rating, Vgg = OV - - 1000 Vos = 0.8 x Max. Rating Veg = OV. Ty = 125C less Gate-to-Source Leakage Forward ALL ~ - 500 nA Ves = 20V lass Gate-to-Source Leakage Reverse ALL = - 500 nA Ves = 20V Qg Total Gate Charge ALL - 120 190 nc Veg = 10V. Ip = 21A Vps = 0.8 x Max. Rating Qgs Gate-to-Source Charge ALL _ 18 27 ac See Fig. 16 Qq Gate-to-Drain ("Miller") Charge ALL - 62 93 ac (Independent of operating temperature) tdion) Furn-On Delay Time ALL - 23 35 ns Vpp = 250V, In = 214, Rg = 4.32 t Rise Time ALL - 81 120 ns Rp = 122 tdioff Turn-Off Delay Time ALL _ 8 130 ns See Fig. 15 te Fall Time ALL _ 65 98 ns (Independent of operating temperature) Lp Internal Drain tnductance ALL 5.0 =~ nH Measured from the drain Modified MOSFET symbol lead, 6mm (0.25 in.) from showing the internal package to center of die inductances ls internal Source Inductance ALL _ 13 - nH Measured from the source i lead, 6mm (0.25 in.} from 4 package to source bonding, pad 7 Ciss input Capacitance ALL _ 4100 = pF Ves = 0V. Vpg = 25V Coss Output Capacitance ALL _ 480 = pF f = 1.0 MHz Crsg Reverse Transfer Capacitance ALL = 84 - pF See Fig. 10 Ringc Junctionto-Case ar | | - | 050 | ecw Rincs Case-to-Sink ALL - 0.166 =~ C/w | Mounting surface flat, smooth, and greased Rihya Junction-to-Ambient ALL - _ 40 C/W | Typical socket mount Mounting Torque ALL - - 10 jin. elbs.| Standard 6-32 screw Repetitive Rating; Pulse width limited by maximum junction temperature (see figure 5) Refer to current HEXFET reliability report @Vpop = 50V, Starting Ty = 25C, L = 4.3 mH, Rg = 259, Peak | = 20A SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS @ Pulse width < 300 us; Duty Cycle < 2% Parameter Type Min. Typ. Max. Units Test Conditions Ig Continuous Source Current ALL - - 20 A Modified MOSFET symboi showing the integrat (Body Diode} Reverse p-n junction rectifier . Isa Pulsed Source Current ALL - - 80 A ( | j (Body Diode) s Vsp Diode Forward Voltage @ ALL _ _ 1.8 v Ty = 28C, Ig = 21A, Vag = OV ter Reverse Recovery Time ALL 280 580 1200 ns Ty = 29C, ip = 214, dikit = 100 Ajys Ora Reverse Recovery Charge ALL 3.8 81 18 ue ton Forward Turn-On Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lp 11-22Preview Products 40 10V BOvs PULSE ST o tw w o & ro Ip. DRAIN CURRENT (AMPERES) @ 0 0 Ip. ORAIN CURRENT (AMPERES) 50 100 150 200 2 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. 4 a 12 16 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 - Typical saturation characteristics. THERMAL RESPONSE (Zp Jc) 4075 1074 IRFP460, iIRFP462 10 Vos 2 SOV PILSE TEST 5 On uo Ip. ORAIN CURRENT (AMPERES) 1078 0 2 4 6 8 10 Veg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 - Typical transfer characteristics. 103 OPERATION IN THIS AREA LIMITED BY Ros (ON) 2 402 LJ iRFP460 5 F-JIRFP462 2 on ny Ip. ORAIN CURRENT (AMPERES) = 3 5 To =25C Ty = 150C 2 SINGLE PULSE 0.1 1 2 5 19 2 5 we 2 5 103 Vpg-: DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-44232 Fig. 4 - Maximum safe operating area. 1 1 ol [oF NOTES: 4. DUTY FACTOR, D=ty/t2 2. PEAK Ty=Pom X Ztnuc + Te 1072 0.4 1 10 t4. RECTANGULAR PULSE DURATION (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration. 11-23Preview Products IRFP460, IRFP 462 40 VYog 2 SOV 60ps SE TEST 3B a & wo 2 32 a a = 4 2 b 5 = Ty2150 Wo24 ry =150C z 5 < a oO 2 Zz 2 Pe 5 16 = Oo oO wn z uw << a ax xc - ly > a 8 @ + t on a a a 0 4 0 8 16 24 32 40 0.0 0.4 0.8 1.2 1.6 2.0 Ip, DRAIN CURRENT (AMPERES) Vgp. SQUACE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward voltage. 1.25 3.0 a re o a no ORAIN-TO-SOURCE ON RESISTANCE (NORMAL IZED) BVpgg. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.85 = 06 2 no oO x Veg = 10V 0.75 0.0 =60 -40 -20 0 20 40 60 80 100 120 140 160 60 -40 -2e0 0 20 40 60 80 100 120 140 160 T, JUNCTION TEMPERATURE { C) Ty, JUNCTION TEMPERATURE ( C) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. 10000 - =, Cog: Cgg SHORTED = . a + Cgg Sas a Vong = 400 ~ "9d 3 Vog = 250V~ 8000 2 os * = = fgg + Cys Cgg / (yg + Cg) 2 Ypg = 100V zc Cys + C w . & 5 * Sag 8 a w 6000 a 3 > < us 5 2 2 3 a 4000 & a 1 e 2 g w w <x 2000 6 8 > FOR TEST CIRCUIT 0 SEE FIGURE 16 t 2 5 10 2 5 102 0 40 80 120 160 200 Vpg. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg. TOTAL GATE CHARGE (nC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 11-24Preview Products Vgg = 20 Aps (on) ORAIN-TO-SOURCE ON RESISTANCE 0 20 40 60 80 100 Ip. DRAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. Vos VARY lp TO OBTAIN REQUIRED PEAK | p 0010 Fig. 14a - Unclamped inductive test circuit. Ves = 10V | PULSE WIDTH < 1 us DUTY FACTOR <0 1% Fig. 15a - Switching time test circuit. 1V R- - - - ee I Ve GATE VOLTAGE CHARGE Fig. 16a - Basic gate charge waveform. IRFP460, IRFP462 Ip, DAAIN CURRENT (AMPERES) 9 25 50 75 100 125 1 Te. CASE TEMPERATURE ( C) Fig. 13 - Maximum drain current vs. case temperature. 8Vpss ( ' ( ' 1 + 1 i 10% _/ 1 tdron) bo +f {dott} Fig. 15b - Switching time waveforms. +Vps ISOLATED UPPLY) TYPE UT o -Yps 'G > 1D CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 16b - Gate charge test circuit. 11-25