BCR08PN NPN/PNP Silicon Digital Transistor Array * Switching circuit, inverter, interface circuit, driver circuit 4 5 6 * Two (galvanic) internal isolated NPN/PNP 1 Transistors in one package 2 3 * Built in bias resistor NPN and PNP (R1=2.2 k, R2=47 k) * Pb-free (RoHS compliant) package C1 B2 E2 6 5 4 * Qualified according AEC Q101 R2 R1 TR2 TR1 R1 R2 1 2 3 E1 B1 C2 Tape loading orientation EHA07176 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device Top View 654 W1s Position in tape: pin 1 opposite of feed hole side 123 Direction of Unreeling EHA07193 Type BCR08PN Marking WFs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings for NPN and PNP Types Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 20 Input reverse voltage Vi(rev) 5 DC collector current IC 100 mA Total power dissipation, TS = 115 C Ptot 250 mW Junction temperature Tj 150 C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point1) 1For calculation of R RthJS 140 K/W thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-07-28 BCR08PN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 164 A hFE 70 - - - - - 0.3 V Vi(off) 0.4 - 0.8 Vi(on) 0.5 - 1.1 Input resistor R1 1.5 2.2 2.9 Resistor ratio R1/R2 DC Characteristics for NPN and PNP Types Collector-emitter breakdown voltage V IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V 0.042 0.047 k 0.052 - AC Characteristics for NPN and PNP Types Transition frequency fT - 170 - MHz Ccb - 2 - pF IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 2011-07-28 BCR08PN NPN Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), IC /IB = 20 10 3 0.5 V VCEsat hFE 0.4 10 2 0.35 0.3 -40 C -25 C 25 C 85 C 125 C 0.25 0.2 10 1 -40 C -25 C 25 C 85 C 125 C 0.15 0.1 0.05 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 10 1 V V Vi(off) Vi(on) -40 C -25 C 25 C 85 C 125 C 10 0 10 -1 -5 10 -1 -40 C -25 C 25 C 85 C 125 C 10 0 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 3 2011-07-28 -1 BCR08PN PNP Type DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC ), IC /IB = 20 10 3 0.5 0.35 10 2 hFE hFE 0.4 0.3 0.25 -40 C -25 C 25 C 85 C 125 C 0.2 10 1 -40 C -25 C 25 C 85 C 125 C 0.15 0.1 0.05 10 0 -4 10 10 -3 10 -2 A 10 0 -3 10 -1 10 -2 A 10 IC IC Input on Voltage Vi(on) = f (IC) VCE = 0.3V (common emitter configuration) Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 1 10 1 -40 C -25 C 25 C 85 C 125 C V Vi(off) Vi(on) V 10 0 10 -1 -5 10 -1 -40 C -25 C 25 C 85 C 125 C 10 0 10 -4 10 -3 10 -2 A 10 10 -1 -5 10 -1 IC 10 -4 10 -3 10 -2 A 10 IC 4 2011-07-28 -1 BCR08PN Total power dissipation P tot = f (TS ) 300 mW 250 Ptot 225 200 175 150 125 100 75 50 25 0 0 15 30 45 60 90 105 120 C 75 150 TS Permissible Pulse Load RthJS = f (t p) Permissible Pulse Load Ptotmax / PtotDC = f (tp ) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 tp 5 2011-07-28 0 Package SOT363 BCR08PN Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 6 2011-07-28 BCR08PN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 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