2011-07-28
1
BCR08PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor NPN and PNP
(R1=2.2 k, R2=47 k)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
1
623
54
EHA07176
654
321
C1 B2 E2
C2B1E1
1
R
R2
R1
R2
TR1 TR2
Tape loading orientation
EHA07193
123
456
W1s
Direction of Unreeling
Top View Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Type Marking Pin Configuration Package
BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings for NPN and PNP Types
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Input forward voltage Vi(fwd) 20
Input reverse voltage Vi(rev) 5
DC collector current IC100 mA
Total power dissipation, TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS 140 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BCR08PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V(BR)CEO 50 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 50 - -
Collector cutoff current
VCB = 40 V, IE = 0
ICBO - - 100 nA
Emitter cutoff current
VEB = 5 V, IC = 0
IEBO - - 164 µA
DC current gain 1)
IC = 5 mA, VCE = 5 V
hFE 70 - - -
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3 V
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.4 - 0.8
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Vi(on) 0.5 - 1.1
Input resistor R11.5 2.2 2.9 k
Resistor ratio R1/R20.042 0.047 0.052 -
AC Characteristics for NPN and PNP Types
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 2 - pF
1) Pulse test: t < 300µs; D < 2%
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BCR08PN
NPN Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), IC/IB = 20
10 -3 10 -2 10 -1
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
V
0.5
VCEsat
-40 °C
-25 °C
25 °C
85 °C
125 °C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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BCR08PN
PNP Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), IC/IB = 20
10 -3 10 -2 10 -1
A
IC
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.5
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -4 10 -3 10 -2 10 -1
A
IC
0
10
1
10
2
10
3
10
hFE
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(off)
-40 °C
-25 °C
25 °C
85 °C
125 °C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -5 10 -4 10 -3 10 -2 10 -1
A
IC
-1
10
0
10
1
10
V
Vi(on)
-40 °C
-25 °C
25 °C
85 °C
125 °C
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BCR08PN
Total power dissipation Ptot = f (TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
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BCR08PN
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
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BCR08PN
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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