SDP8405 Silicon Phototransistor FEATURES * 7-1 plastic package * 20 (nominal) acceptance ande Consistent optical properies * Wide sensilivly ranges * Mechanically and spectrally matched ta SEPS505 and SEP87OS infrared emitting diades DESCRIPTION The SOP 8466 ie an NPM siloon phototransistor transfer moked ina T-1 clear plastic package. Transfer mokling of this device assures supenor optical centedine pefomance compared to other molding processes. Lead lenglhs are slaggered to previce a simple method of polarity identiication. fr & 5 if wi B ub ae fijiit: wow. apel lesz, cam INF ARS TE OUTLINE DIMENSIONS in inches (mm Tderame 3pledecimale 20.006(0.12\ 2pledecimale =20.0@0/0.51) 20 Oey Tea ST : u7B ISD SO.LEAore Dey IT] ET a COLLECTOR ea 3 par ERATTER. | o 15%: [3 1Ey ad } epee z= Lin cae oy 127] fan | La Daa 1Ddded im Ill Th Fe oZ 78 FB FG OR Z@ ol Hhit: FER PRIA AB 1006-1018 BMif: O755-89779118/89278699/ 83278860 Aaa: 518033 $B: 0755-85279284 Higa: Sensor@apol losz. comSDP8405 Silicon Phototransistor ELECTRICAL CHARACTERISTICS QRS UnHihn ORM WREG Fob PARAMETER SYMBOL] MIN TYP MAX | UNITS TEST CONDITIONS Light rent kh Pre. Vom SOPH 10 Pe ATE | Peo Too 4. BOR G-ica 120 mao Ligh Curent kh rr, You SOPH 1 0.18 ee eee SOP HMGHH2 O18 O48 FOP O13 ae LaF SOPH bn 1 SOP Maha 1a Golector Gark Gurren how 1 re Vor 16 Vi, He Collec Emitter Greeiiown Yottege =| Vieetens | 3 [mm OD Brnither obec! Shamim Voth Vee | 2.5 ee idd pA Golecsto-Emiiter Satureian Vollece Veet) of ie BOP RAGEO01 to cea Hel miter SOPE40601 1 10-16 Hel] 25 avon Anguie Puasporea | a me ey. | pemreeeL Fle Aun Fall Tiree bE 1E = Vous Vv, buat ot Famii o ee mxdlaton i mt poor FA 2 Thu vadhation souncn in Taha pk weer a SL Age ieee Mm epic ie tha Ricca Reece ier epee Ep Het ey pe ABSOLUTE MAXIMUM RATIHGS SCHEMATIC (26C Free-Air Tamperature unees otherwise noted Gamicatcr Collector-Ermitter Voltage a0 Emitter-Collector Voltage 5 Power Dissipation FO rey 1 Operating Temperature Range 40C to a5 Storage Temperature Range -40C to go Ze Soldering Temperature (5 sec] agri cane Nabce: 1. Derate lincardty trom 25C [rec-air tampersiure at the rate al O48 rive c. u Emnlitor fe eS i oe) ub ap im Uh #2 Me +t BRS Sl hit: BTS Pda A 1006-1018 te: 518033 Blin: OFT55-892791 18/832 79699,832 78660 42: 0755-839279284 fijdtit: www. apollosz. cam Higa: Sensor@apal lasz. comSDP8405 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT ce Oicir Ve: iV O+ Giles = B i Ef -- } Fig. 1 Aesponsivity vs Angular Cis placement aA cht 1.0 LILLE ttt trrres- Relative reaps 2tatlLLLE LL Lrrrrerrn 4 Fttititteit 40 3-20 -10 OF 410 420 +2) +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature aS ott ie z m_ we = 16 : 7 a 4 ez 4a Fo OUDClCUa Cae fe & ff wi B ul BB Hhit: FER PRIA AB 1006-1018 BMif: O755-89779118/89278699/ 83278860 fijiit: wow. apel lesz, cam SWITCHING WAVEFORM om_M, coh Fig. 2 Gollector Current we Ambient Temperature awa OB ed 220 TTT 5s gefl-LtI_tt_tot th @ | | tT rt t t tid S8- q2pl_bLt_t_t - ae | 1 i tod 3 ost ery pay E | | Trt t tt = Serr acre tie raick | | FE rt dt td o.0 T T T T T T T T a 10 2 3 do 80 gO 70 aD Ambient tampearature - C Fig. 4 Non-Saturated Switching Time vs Load Resistance xu bd SHWE = SHE Sa Resniee ine - us 1 Ua 10 160 1000 10000 Load resistance - Ohms im Ill Th Fe oZ 78 FB FG OR Z@ ol Aaa: 518033 fH: 0755-89279283 Absa: Sensor@apeal lasz. comSDP8405 Silicon Photetransistor Fig. 5 9 Spectral Responsivity Fig 6 = Coupling Characteristics a del with SEPSso5 qe Ehibel n TTT E= aL | TITLE = a opt od ,E= 5 orf CO TOCCC JF oe. LLLLi ; 2 os4LII ti-LLI4 1 i on Lift LLL 5 0 O34] +FLHIA nd el AT4+eee EE 63 ESrormm=a3s os At t+ EFF a PE Piieil I a 4 800 BOO 1o00 1200 Tn ee Wavelength - nm Lens-icHens separation - inches All Performance Curves Show Typical Values fe & Sw a) ok BB im Dl th YE 2 7 FG OR 2 ol Hitt: FEV PHILA AB 1006-1018 Bisa: 518033 Big: O755-892979118/83278699/832 78860 EH: 0756-83279284 faltit: www, apollosz. com Hiza: Sensor@apoal losz. com