DS30269 Rev. 2 - 2 1 of 3 MMBT2907AT
MMBT2907AT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT2222AT)
·Ultra-Small Surface Mount Package
Characteristic Symbol MMBT2907AT Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC-600 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
D
BC
H
K
G
TOP VIEW
C
E
B
Mechanical Data
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
·Case: SOT-523, Molded Plastic
·Case material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking (See Page 2): 2F
·Ordering & Date Code Information, See Page 2
·Weight: 0.002 grams (approx.)
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
DS30269 Rev. 2 - 2 2 of 3 MMBT2907AT
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -60 ¾VIC= -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾VIC= -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICBO ¾-10 nA
mA
VCB = -50V, IE= 0
VCB = -50V, IE= 0, TA = 125°C
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC = -100µA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.4
-1.6 VIC= -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base- Emitter Saturation Voltage VBE(SAT) ¾-1.3
-2.6 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8.0 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo —30pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time toff ¾45 ns
Delay Time td¾10 ns VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time tr¾40 ns
Turn-Off Time toff ¾100 ns
Storage Time ts¾80 ns VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Notes: 2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Device Packaging Shipping
MMBT2907AT-7 SOT-523 3000/Tape & Reel
(Note 3)
Ordering Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
2F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2FYM
Marking Information
DS30269 Rev. 2 - 2 3 of 3 MMBT2907AT
I , BASE CURRENT (mA)
B
Fig. 3 Typical Collector Saturation Region
V,C
O
LLECT
O
R-EMITTER V
O
LTAGE (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I=10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
C, CAPACITANCE (pF)
REVERSE VOLTAGE (V)
Fi
g
. 2 Capacitances
(
T
y
pical
)
Cobo
Cibo
0
100
150
50
200
2
5
0
0100200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
g
. 1, Power Deratin
g
Curve
(see Note 1)
