© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 3000 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 3000 V
VGES Continuous ± 25 V
VGEM Transient ± 35 V
IC25 TC = 25°C 60 A
IC110 TC = 110°C 24 A
ICM TC = 25°C, 1ms 380 A
SSOA VGE = 15V, TVJ = 125°C, RG = 20Ω ICM = 84 A
(RBSOA) Clamped Inductive Load VCE ≤ 0.8 • VCES
TSC VGE = 15V, TJ = 125°C, 10 μs
(SCSOA) RG = 82Ω, VCE = 1500V, Non-Repetitive
PCTC = 25°C 240 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10 seconds 260 °C
FCMounting Force 20..120 / 4.5..27 Nm/lb.in.
VISOL 50/60Hz, 1 Minute 3000 V~
Weight 5 g
DS100325A(06/11)
IXBF42N300
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 1mA, VGE = 0V 3000 V
VGE(th) IC = 1mA, VCE = VGE 3.0 5.0 V
ICES VCE = 0.8 • VCES, VGE = 0V 50 μA
Note 2, TJ = 125°C 250 μA
IGES VCE = 0V, VGE = ± 25V ±200 nA
VCE(sat) IC = 42A, VGE = 15V, Note 1 2.5 3.0 V
TJ = 125°C 3.1 V
VCES = 3000V
IC110 = 24A
VCE(sat) ≤≤
≤≤
≤ 3.0V
High Voltage, BiMOSFETTM
Monolithic Bipolar MOS
Transistor
(Electrically Isolated Tab)
1 = Gate 5 = Collector
2 = Emitter
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
z3000V~ Electrical Isolation
zHigh Blocking Voltage
zHigh Peak Current Capability
zLow Saturation Voltage
zFBSOA Rated
zSCSOA Rated
Advantages
zLow Gate Drive Requirement
zHigh Power Density
Applications
zLaser Generators
zCapacitor Discharge Circuits
zAC Switches
zProtection Circuits
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF42N300
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 42A, VCE = 10V, Note 1 28 45 S
Cies 4780 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 170 pF
Cres 56 pF
RGi Gate Input Resistance 3.0 Ω
Qg 200 nC
Qge IC = 42A, VGE = 15V, VCE = 1000V 28 nC
Qgc 75 nC
td(on) 72 ns
tr 330 ns
td(off) 445 ns
tf 610 ns
td(on) 72 ns
tr 580 ns
td(off) 460 ns
tf 490 ns
RthJC 0.52 °C/W
RthCS 0.15 °C/W
Resistive Switching Times, TJ = 125°C
IC = 42, VGE = 15V
VCE = 1500V, RG = 20Ω
Resistive Switching Times, TJ = 25°C
IC = 42, VGE = 15V
VCE = 1500V, RG = 20Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max
VF IF = 42A, VGE = 0V, Note 1 2.5 V
trr 1.7 μs
IRM 43 A
IF = 21A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
Notes:
1. Pulse test, t < 300μs, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2011 IXYS CORPORATION, All Rights Reserved
IXBF42N300
Fi g . 1. Outpu t C h ar acteristi cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fi g . 2. Exten d ed O u tp u t Char a cter i stics @ T
J
= 25ºC
0
40
80
120
160
200
240
280
320
012345678910
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
10V
15V
5V
Fi g . 3. Outpu t C h ar acteristi cs @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 25V
20V
15V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 84A
I
C
= 42A
I
C
= 21A
Fi g . 5. C o l l ecto r-to- Emi tter Vo l t ag e
vs. Gate-to -Emi tter Vo lt age
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 7 9 1113151719212325
V
GE
- Volts
V
CE
- Volts
I
C
= 84A
T
J
= 25ºC
21A
42A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5
V
GE
- Volts
I
C
- Amperes
T
J
= - 40ºC
25ºC
125ºC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF42N300
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
VGE - Volts
V
CE
= 1000V
I
C
= 42A
I
G
= 10mA
Fi g . 11. R ever se-B i as Safe Op er ati n g Area
0
10
20
30
40
50
60
70
80
90
250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 20Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fi g . 12. Maxi mu m Tran si en t Ther mal I mp ed an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
00.511.522.533.5
VF - Volts
IF - Amperes
T
J
= 125ºC
T
J
= 25ºC
© 2011 IXYS CORPORATION, All Rights Reserved
IXBF42N300
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
250
300
350
400
450
500
550
600
650
40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
r
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resi sta nce
200
400
600
800
1000
1200
1400
1600
1800
20 40 60 80 100 120 140 160 180
R
G
- Ohms
t
r
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
Fig. 16. Resistive T urn-off Switching Times vs.
Jun ct i o n Temp er atur e
200
300
400
500
600
700
800
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
380
400
420
440
460
480
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 20Ω, V
GE
= 15V
V
CE
= 1500V
I
C
= 42A
I
C
= 84A
Fig . 17. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Collector Current
200
300
400
500
600
700
800
40 45 50 55 60 65 70 75 80 85
I
C
- Amperes
t
f
- Nanoseconds
380
400
420
440
460
480
500
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 20Ω, V
GE
= 15V
V
CE
= 1500V
T
J
= 125ºC
T
J
= 25ºC
Fig . 13. Resi st ive Turn- o n Rise Ti me vs .
Junction T emperature
250
300
350
400
450
500
550
600
650
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 20Ω , V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
Fig . 18. R esi st i ve Turn -o ff Switch i n g Ti mes vs .
Gate Resistance
200
300
400
500
600
700
800
900
1000
1100
20 40 60 80 100 120 140 160 180
R
G
- Ohms
t
f i
- Nanoseconds
0
400
800
1200
1600
2000
2400
2800
3200
3600
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1500V
I
C
= 84A
I
C
= 42A
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF42N300
IXYS REF: B_42N300(8M)04-14-11
Fig. 19. Forward-Bias Safe Operating Area @ T
C
= 25ºC
0.001
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100ms
DC
25µs
Fig. 20. Forward-Bias Safe Operating Area @ T
C
= 115ºC
0.001
0.01
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 115ºC
Single Pulse
100ms
DC
25µs
