©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
FJP5021
NPN Silicon Transistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classifi cation
Symbol Parameter Value Units
VCBO Collector-Base Voltage 800 V
VCEO Collector-Emitter Voltage 500 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current (DC) 5 A
ICP Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Unit s
BVCBO Collector-Base Breakdown V oltage IC = 1mA, IE = 0 800 V
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V
BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
VCEX(sus) Collector-Emitter Sustaining V olt age IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped 500 V
ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 µA
IEBO Em itter Cut-off Current VEB = 5V, IC = 0 10 µA
hFE1
hFE2
DC Current Gain VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A 15
8 50
VCE(sat) Collector-Emitter Saturation Vo ltage IC = 3A, IB = 0.6A 1 V
VBE(sat) Base-Emitter Satura tion Volt age IC = 3A, IB = 0.6A 1.5 V
Cob Output Capacitance VCB = 10V, IE = 0, f=1MHz 80 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.6A 18 MHz
tON Turn On Time VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50Ω
0.5 µs
tSTG St orage Time 3 µs
tF Fall Time 0.1 0.3 µs
Classification R O Y
hFE1 15 ~ 30 20 ~ 40 30 ~ 50
FJP5021
High Voltage and High Reliability
• High Speed Switching : tF = 0.1µs (Typ . )
• Wide SOA
1.Base 2.Collector 3.Emitter
1TO-220
©2003 Fairchild Semiconductor Corporation
FJP5021
Rev. A, May 2003
Typical Characteristics
Figure 1. Static Characteristic F i gure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Switching Time Figure 6. Forward Bias Safe Operating Area
0246810
0
1
2
3
4
5
IB = 1.2 A
IB = 1A
IB = 800mA IB = 600mA
IB = 400mA
IB = 200mA
IB = 100mA
IB = 50mA
IB = 20mA
IB = 0
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
1
10
100
VCE = 5V
hFE, DC CURRENT G AIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 5 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
1
2
3
4
5
6
VCE = 5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
0.1 1 10
0.01
0.1
1
10
tF
tON
tSTG
tON, tSTG, tF [µs], TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
50µs
500µs
1ms
10ms
DC
ICP(max)
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
©2003 Fairchild Semiconductor Corporation
FJP5021
Rev. A, May 2003
Typical Characteristics (Continued)
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
10 100 1000 10000
0.01
0.1
1
10
100 Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
IC[A], COLLECTOR CURRENT
VCE[V], COLLE C T OR - EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], POWE R DISSI PATIO N
TC[oC], CASE TEMPERATURE
Package Dimensions
FJP5021
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation Rev. A, May 2003
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
©2003 Fairchild Semiconductor Corporation Rev. I2
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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