Silicon Power Transistor TO-220 Features: * Very Low Collector Saturation Voltage * Excellent Linearity * Fast Switching Millimetres Dimensions Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.96 J 1.14 1.38 K 2.2 2.97 L 0.33 0.55 M 2.48 2.98 O 3.7 3.9 Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1 MHz; series, shunt and switching regulators; low and high frequency inverters / converters and many others Maximum Ratings Characteristics Symbol D44H8 Unit Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCES 60 V Emitter-Base Voltage VEBO 5 V IC ICM 10 20 A Base Current IB 2 A Total Power Dissipation at Tc = 25C Derate above 25C PD 50 0.4 W W/C TJ, TSTG -55 to +150 C Collector Current - Continuous Peak Operating and Storage Junction Temperature Range www.element14.com www.farnell.com www.newark.com Page <1> 17/02/12 V1.1 Silicon Power Transistor Maximum Ratings Characteristics Thermal Resistance Junction to Case Symbol Maximum Unit Rjc 2.5 C/W PD, Power Dissipation (Watts) Figure 1 Power Derating TC, Temperature (C) Electrical Characteristics (Tc = 25C Unless Otherwise Noted) Characteristics Symbol Minimum VCEO(SUS) 60 Maximum Unit OFF Characteristics Collector-Emitter Sustaining Voltage (IC = 300 mA, IB = 0) D44H, 8 V Collector-Emitter Cutoff Current (VCE = 60 V, VBE = 0) D44H, 8 ICES 10 uA Emitter-Base Cutoff Current (VBE = 5 V, IC = 0) IEBO 100 uA D44H, 8 ON Characteristics (1) DC Current Gain (IC = 2 A, VCE = 1 V) (IC = 4 A, VCE = 1 V) D44H, 8 hFE 60 Collector-Emitter Saturation Voltage (IC = 8 A, IB = 800 mA) D44H, 8 (IC = 8 A, IB = 400 mA) VCE(Sat) 1 V Base-Emitter Saturation Voltage (IC = 8 A, IB = 800 mA) All Devices VBE(sat) 1.5 V Dynamic Characteristics Current-Gain Bandwidth Product (2) (Ic = 500 mA, VCE = 10 V, f = 0.5 MHz) D44H Series Output Capacitance (VCE = 10 V, IE = 0, f = 1 MHz) fT 15 MHz Cob 220 PF (1) Pulse Test : Pulse Width = 300 us, Duty Cycle 2% (2) fT = | hfe | ftest www.element14.com www.farnell.com www.newark.com Page <2> 17/02/12 V1.1 Silicon Power Transistor Electrical Characteristics (Tc = 25C Unless Otherwise Noted) Switching Characteristics Rise Time Storage Time Fall Time Ic = 5 A IB1 = -IB2 = 500 mA D44H Series tr 0.5 us D44H Series ts 1 us D44H Series tf 0.4 us DC Current Gain DC Current Gain "ON" Voltages www.element14.com www.farnell.com www.newark.com Page <3> 17/02/12 V1.1 Silicon Power Transistor Forward BIAS Safe Operating Area Part Number Table Description Part Number Silicon Power Transistor D44H8 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <4> 17/02/12 V1.1