DSB 1 I 60 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number (Marking on product) DSB 1 I 60 SA (S1HB) 60 V 1A 0.50 V Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses Low Irm-values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Decoupling diode Industry standard outline Epoxy meets UL 94V-0 RoHS compliant SMA (DO-214AC) Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 C 60 V VR = 60 V TVJ = 25 C 0.1 mA VR = 60 V TVJ = 125 C 15 mA IF = IF = 1A 2A TVJ = 25 C 0.58 0.72 V V IF = IF = 1A 2A T VJ = 125 C 0.50 0.64 V V rectangular, d = 0.5 T L = 125 C 1 A Conditions forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJL thermal resistance junction to lead* TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current tp = 10 ms (50 Hz), sine CJ junction capacitance VR = EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5*VR typ.; f = 10 kHz T L = 150 C for power loss calculation only V m 40 K/W 150 C TL = 25 C 3 W TVJ = 45 C 45 A 25 C 65 pF TVJ = 25 C tbd mJ tbd A -55 5 V; f = 1 MHz A; typ. L = 100 H TVJ = * mounted on 1 inch square PCB (c) 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0615 IXYS reserves the right to change limits, conditions and dimensions. DSB 1 I 60 SA advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thJA thermal resistance junction to ambient MD mounting torque FC mounting force with clip T stg storage temperature min. typ. Unit max. A 80 K/W Nm N 150 -55 Weight C 0.07 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines SMA (DO-214AC) E D H Dim. F Inches min max min max A 3.99 4.50 0.157 0.177 B 2.54 2.79 0.100 0.110 C 1.25 1.65 0.049 0.065 D 1.98 2.29 0.078 0.090 E 4.93 5.28 0.194 0.208 F 0.76 1.52 0.030 0.060 G 0.15 0.31 0.006 0.012 H 2.00 2.20 0.079 0.087 B C G Millimeters A (c) 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0615 IXYS reserves the right to change limits, conditions and dimensions.