ZXMP6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary BVDSS -60V Features and Benefits RDS(on) ID TA = +25C 125m @ VGS= -10V -4.3A 190m @ VGS= -4.5V -3.5A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply Fast Switching Speed Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT223 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (Approximate) SOT223 D G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZXMP6A17GTA ZXMP6A17GTC Note: Case SOT223 SOT223 Packaging 1,000/Tape & Reel 4,000/ Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 ZXMP6A17 = Product Type Marking Code YWW = Date Code Marking Y or Y= Year (ex: 5 = 2015) WW or WW = Week (01 - 53) ZXMP6A17G Document Number DS33375 Rev. 7 - 2 1 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS 20 V (Note 6) Continuous Drain Current VGS = 10V -4.3 TA = +70C (Note 6) ID (Note 5) Pulsed Drain Current -3.5 A -3.0 VGS = 10V (Note 7) IDM -13.7 A Continuous Source Current (Body Diode) (Note 6) IS -4.8 A Pulsed Source Current (Body Diode) (Note 7) ISM -13.7 A Symbol Value Unit PD 2.0 16 3.9 31 W mW/C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor (Note 5) (Note 6) Thermal Resistance, Junction to Ambient (Note 5) (Note 6) RJA 62.5 32.0 Thermal Resistance, Junction to Lead (Note 8) RJL 9.8 TJ, TSTG -55 to +150 Operating and Storage Temperature Range Notes: C/W C 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 10sec. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMP6A17G Document Number DS33375 Rev. 7 - 2 2 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G RDS(on) Limited 1 DC 1s 100ms 10ms Single Pulse T amb=25C 10m 1 1ms 100s 10 -VDS Drain-Source Voltage (V) 100 Max Power Dissipation (W) -ID Drain Current (A) 10 100m 2.0 25mm x 25mm 1oz FR4 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 Temperature (C) Safe Operating Area Derating Curve 70 Maximum Power (W) Thermal Resistance (C/W) ADVANCE INFORMATION Thermal Characteristics T amb=25C 60 100 50 40 D=0.5 30 20 Single Pulse T amb=25C Single Pulse D=0.2 D=0.05 10 0 100 10 D=0.1 1m 10m 100m 1 Pulse Width (s) 10 100 1k 1 100 Document Number DS33375 Rev. 7 - 2 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation Transient Thermal Impedance ZXMP6A17G 1m 3 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -60 V ID = -250A, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 A VDS = -60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) -1.0 V ID = -250A, VDS = VGS ON CHARACTERISTICS Gate Threshold Voltage 0.096 0.125 0.120 0.190 RDS(ON) Forward Transconductance (Notes 9 & 10) gfs 4.7 Diode Forward Voltage (Note 9) VSD -0.85 Reverse Recovery Time (Note 10) trr Reverse Recovery Charge (Note 10) Qrr Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge (Note 11) Static Drain-Source On-Resistance (Note 9) VGS = -10V, ID = -2.2A VGS = -4.5V, ID = -1.8A S VDS = -15V, ID = -2.2A -0.95 V IS = -2.0A, VGS = 0V, TJ = +25C 25.1 ns 27.2 nC IS = -1.7A, di/dt = 100A/s, TJ = +25C 637 pF 70.0 pF Crss 53.0 pF Qg 9.0 nC Total Gate Charge (Note 11) Qg 17.7 nC Gate-Source Charge (Note 11) Qgs 1.6 nC Gate-Drain Charge (Note 11) Qgd 4.4 nC tD(on) 2.6 ns Turn-On Rise Time (Note 11) tr 3.4 ns Turn-Off Delay Time (Note 11) tD(off) 26.2 ns tf 11.3 ns DYNAMIC CHARACTERISTICS (Note 10) Turn-On Delay Time (Note 11) Turn-Off Fall Time (Note 11) Notes: VDS = -30V, VGS = 0V f = 1MHz VGS = -4.5V VGS = -10V VDS = -30V ID = -2.2A VDD = -30V, VGS = -10V ID = -1A, RG 6.0 9. Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. ZXMP6A17G Document Number DS33375 Rev. 7 - 2 4 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G 10V 4V 3.5V 3V 1 2.5V 2V 0.1 -VGS 0.01 0.1 1 4.5V 3.5V 3V 2.5V 10 1 2V -VGS 0.1 1.5V 0.01 10 5V 10V T = 150C 5V 10 -ID Drain Current (A) -ID Drain Current (A) T = 25C 0.1 1 10 -VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics -ID Drain Current (A) T = 150C 1 T = 25C 0.1 -VDS = 10V 1 2 3 4 Normalised RDS(on) and VGS(th) 1.8 10 -VGS Gate-Source Voltage (V) Typical Transfer Characteristics 100 2V -VGS 2.5V 10 3V 3.5V 4V 1 5V 0.1 10V T = 25C 0.01 0.1 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMP6A17G Document Number DS33375 Rev. 7 - 2 VGS = -10V 1.6 ID = - 2.3A RDS(on) 1.4 1.2 1.0 VGS(th) VGS = VDS 0.8 ID = -250uA 0.6 -50 0 50 100 150 Tj Junction Temperature (C) Normalised Curves v Temperature -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance ADVANCE INFORMATION Typical Characteristics 10 T = 150C 1 T = 25C 0.1 VGS= 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G VGS = 0V f = 1MHz 800 600 CISS COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -VGS Gate-Source Voltage (V) 1000 C Capacitance (pF) ADVANCE INFORMATION Typical Characteristics (cont.) 10 8 6 4 ID = -2.3A 2 VDS = -30V 0 0 2 4 6 8 10 12 Q - Charge (nC) 14 16 18 Gate-Source Voltage v Gate Charge Test Circuits ZXMP6A17G Document Number DS33375 Rev. 7 - 2 6 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 10 0 e A1 7 7 A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Y2 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X ZXMP6A17G Document Number DS33375 Rev. 7 - 2 C 7 of 8 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZXMP6A17G Document Number DS33375 Rev. 7 - 2 8 of 8 www.diodes.com February 2015 (c) Diodes Incorporated