ZXMP6A17G
Document Number DS33375 Rev. 7 - 2
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February 2015
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ZXMP6A17G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
ID
TA = +25°C
-60V
-4.3A
-3.5A
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Applications
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
ZXMP6A17GTA
SOT223
1,000/Tape & Reel
ZXMP6A17GTC
SOT223
4,000/ Tape & Reel
Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Out - Top View
Top View
SOT223
Equivalent Circuit
D
S
G
e3
Green
ZXMP6A17 = Product Type Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 5 = 2015)
WW or WW = Week (01 - 53)
SOT223
ZXMP6A17G
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ZXMP6A17G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
20
V
Continuous Drain Current
VGS = 10V
(Note 6)
ID
-4.3
A
TA = +70°C (Note 6)
-3.5
(Note 5)
-3.0
Pulsed Drain Current
VGS = 10V
(Note 7)
IDM
-13.7
A
Continuous Source Current (Body Diode)
(Note 6)
IS
-4.8
A
Pulsed Source Current (Body Diode)
(Note 7)
ISM
-13.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
2.0
16
W
mW/°C
(Note 6)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
62.5
°C/W
(Note 6)
32.0
Thermal Resistance, Junction to Lead
(Note 8)
RθJL
9.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t 10sec.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17G
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ZXMP6A17G
Thermal Characteristics
110 100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-ID Drain Current (A)
-VDS Drain-Source Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0 25mm x 25mm
1oz FR4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMP6A17G
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ZXMP6A17G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
V
ID = -250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS(ON)
0.096
0.125
Ω
VGS = -10V, ID = -2.2A
0.120
0.190
VGS = -4.5V, ID = -1.8A
Forward Transconductance (Notes 9 & 10)
gfs
4.7
S
VDS = -15V, ID = -2.2A
Diode Forward Voltage (Note 9)
VSD
-0.85
-0.95
V
IS = -2.0A, VGS = 0V, TJ = +25°C
Reverse Recovery Time (Note 10)
trr
25.1
ns
IS = -1.7A, di/dt = 100A/µs,
TJ = +25°C
Reverse Recovery Charge (Note 10)
Qrr
27.2
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
637
pF
VDS = -30V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
70.0
pF
Reverse Transfer Capacitance
Crss
53.0
pF
Total Gate Charge (Note 11)
Qg

9.0

nC
VGS = -4.5V
VDS = -30V
ID = -2.2A
Total Gate Charge (Note 11)
Qg
17.7
nC
VGS = -10V
Gate-Source Charge (Note 11)
Qgs
1.6
nC
Gate-Drain Charge (Note 11)
Qgd
4.4
nC
Turn-On Delay Time (Note 11)
tD(on)
2.6
ns
VDD = -30V, VGS = -10V
ID = -1A, RG 6.0Ω
Turn-On Rise Time (Note 11)
tr
3.4
ns
Turn-Off Delay Time (Note 11)
tD(off)
26.2
ns
Turn-Off Fall Time (Note 11)
tf
11.3
ns
Notes: 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17G
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Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
1 2 3 4
0.1
1
10
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10
0.01
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
10V
2V
3.5V
-VGS
2.5V
4V
3V
Output Characteristics
T = 25°C
-VGS
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
1.5V
3.5V
3V
2V
4.5V
10V
2.5V
Output Characteristics
T = 150°C
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V
Typical Transfer Characteristics
-VDS = 10V
T = 25°C
T = 150°C
-ID Drain Current (A)
-VGS Gate-Source Voltage (V)
Normalised Curves v Temperature
RDS(on)
VGS = -10V
ID = - 2.3A
VGS(th)
VGS = VDS
ID = -250uA
Normalised R
DS(on) and VGS(th)
Tj Junction Temperature (°C)
VGS= 0V
4V
10V
3V
2V
3.5V
2.5V
On-Resistance v Drain Current
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance

-ID Drain Current (A)
5V
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
ZXMP6A17G
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Typical Characteristics (cont.)
0.1 1 10
0
200
400
600
800
1000
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
-VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 16 18
0
2
4
6
8
10
ID = -2.3A
VDS = -30V
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
ZXMP6A17G
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ZXMP6A17G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
X1
Y1
Y
XC
C1 Y2
X1
Y1
Y
XC
C1 Y2
ZXMP6A17G
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ZXMP6A17G
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