BSS84DW
Document number: DS30204 Rev. 19 - 2
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BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(on) max
ID max
TA = +25°C
-50V
10 @ VGS = -5V
-130mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
BSS84DW-7-F
Standard
SOT363
3,000/Tape & Reel
BSS84DWQ-13
Automotive
SOT363
10,000/Tape & Reel
BSS84DWQ-7
Automotive
SOT363
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K84 YM
K84 YM
e3
K84 YM
K84 YM
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
K84 YM
K84 YM
K84 YM
K84 YM
BSS84DW
Document number: DS30204 Rev. 19 - 2
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BSS84DW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage (Note 5)
VDGR
-50
V
Gate-Source Voltage Continuous
VGSS
20
V
Drain Current (Note 6) Continuous
ID
-130
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
PD
300
mW
Thermal Resistance, Junction to Ambient
RθJA
417
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-50
-75
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage
IGSS
10
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
-0.8
-1.6
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS(ON)
6
10
Ω
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
0.05
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
45
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
ns
VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time
tD(OFF)
18
ns
Notes: 5. RGS 20kΩ.
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
BSS84DW
Document number: DS30204 Rev. 19 - 2
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0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (
癈
)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2
-1 -5
-4-3
I , DRAIN-SOURCE CURRENT (mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
T = 25 C
A°
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4-1 -8-7
-6
-5
I , DRAIN-CURRENT (A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE-SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
T = 25 C
A °
T = 125 C
A°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
3
6
9
12
15
-50 -25 0 25 50 125
100
75 150
T , JUNCTION TEMPERATURE (
癈
)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
0.0
5.0
10.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V = -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
R , ON-RESISTANCE ( )
DS(ON)
(°C )
(°C )
BSS84DW
Document number: DS30204 Rev. 19 - 2
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BSS84DW
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Dim
Min
Max
Typ
A
0.10
0.30
0.25
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65 Typ
F
0.40
0.45
0.425
H
1.80
2.20
2.15
J
0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.22
0.11

0°
8°
-
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
BSS84DW
Document number: DS30204 Rev. 19 - 2
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BSS84DW
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