Silizium-PIN-Fotodiode mit erhohter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Lead (Pb) Free Product - RoHS Compliant BPW 34 B BPW 34 BS BPW 34 B BPW 34 BS Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm * Kurze Schaltzeit (typ. 25 ns) * DIL-Plastikbauform mit hoher Packungsdichte * Especially suitable for applications from 350 nm to 1100 nm * Short switching time (typ. 25 ns) * DIL plastic package with high packing density Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb im sichtbaren Lichtbereich * Industrieelektronik * Messen/Steuern/Regeln" * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code BPW 34 B Q65110A3126 BPW 34 BS Q65110A2625 2007-04-03 1 BPW 34 B, BPW 34 BS Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 75 nA/Ix Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 350 ... 1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 7.45 mm2 2.73 x 2.73 mm x mm Abmessung der bestrahlungsempfindlichen Flache L x B Dimensions of radiant sensitive area LxW Halbwinkel Half angle 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 ( 30) nA Spektrale Fotoempfindlichkeit, = 400 nm Spectral sensitivity S 0.2 A/W Quantenausbeute, = 400 nm Quantum yield 0.62 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 390 mV 2007-04-03 2 BPW 34 B, BPW 34 BS Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlussstrom Short-circuit current Ee = 0.5 mW/cm2, = 400 nm ISC 7.4 ( 5.4) A Anstiegs- und Abfallzeit des Fotostroms Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A tr, tf 25 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV - 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 400 nm NEP 1.3 x 10- 13 Nachweisgrenze, VR = 10 V, = 400 nm Detection limit D* 2.1 x 1012 2007-04-03 3 W -----------Hz cm x Hz -------------------------W BPW 34 B, BPW 34 B Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f () OHF01001 100 P S rel % 80 OHF01066 10 3 A 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 Total Power Dissipation Ptot = f (TA) 10 2 P 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 600 10 0 1000 nm 1200 800 Dark Current IR = f (VR), E = 0 10 10 3 lx 10 4 EV 10 2 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00080 4000 R 10 1 C pA 0 20 40 60 80 C 100 TA Dark Current IR = f (TA), VR = 5 V, E = 0 OHF00081 100 0 OHF00082 10 3 R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f () 40 30 20 10 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2007-04-03 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 C 100 TA BPW 34 B, BPW 34 BS Mazeichnung Package Outlines BPW 34 B 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 BS 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) 0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Mae in mm (inch) / Dimensions in mm (inch). 2007-04-03 5 BPW 34 B, BPW 34 BS Lotbedingungen BPW 34 BS Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 min. condition for Reflow Soldering: solder point temperature 235 C for at least 10 sec. Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering BPW 34 B OHLY0598 300 C T (nach CECC 00802) (acc. to CECC 00802) 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2007-04-03 6 s 250 BPW 34 B, BPW 34 BS Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-04-03 7