1994. 3. 2 1/2
SEMICONDUCTOR
TECHNICAL DATA
BC237/8/9
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
·High Voltage : BC237 VCEO=45V.
·Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)
(VCE=6V, IC=0.1mA, f=1kHz).
·For Complementary With PNP type BC307/308/309.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
BC237
VCBO
50
VBC238 30
BC239 30
Collector-Emitter Voltage
BC237
VCEO
45
VBC238 20
BC239 20
Emitter-Base Voltage
BC237
VEBO
6
VBC238 5
BC239 5
Collector Current
BC237
IC
100
mABC238 100
BC239 50
Emitter Current
BC237
IE
-100
mABC238 -50
BC239 -50
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
1994. 3. 2 2/2
BC237/8/9
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 --15nA
DC Current Gain
(Note)
BC237
hFE VCE=5V, IC=2mA
120 - 460
BC238 120 - 800
BC239 180 - 800
Collector-Emitter
Saturation Voltage
BC237
VCE(sat)
IC=100mA, IB=5mA - - 0.6
VBC238 - - 0.6
BC239 IC=10mA, IB=0.5mA - - 0.2
Base-Emitter
Saturation Voltage
BC237
VBE(sat)
IC=100mA, IC=5mA - - 1.05
VBC238 - - 1.05
BC239 IC=10mA, IB=0.5mA - - 0.83
Base-Emitter Voltage VBE(ON) VCE=5V, IC=2mA 0.55 - 0.7 V
Transition Frequency fTVCE=5V, IC=10mA, f=100MHz 150 250 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - - 4.5 pF
Noise Figure
BC237
NF
VCE=6V, IC=0.1mA
Rg=10kΩ, f=1kHz
- 1.0 10
dB
BC238 - 1.0 10
BC239 - 0.2 3.0
NOTE : According to the Value of hFE the BC237, BC238, BC239 are classified as follows.
CLASSIFICATION A B C
hFE
BC237 120～220 180～460 -
BC238 120～220 180～460 380～800
BC239 - 180～460 380～800
