BCP56
NPN General Purpose Amplifier
These devices are designed for general purpose medium power amplifiers and switches requiring collector
currents to 1A. Sourced from Process 39.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
°C-55 to +150Operating and Storage Junction Temperature Range
TJ, Tstg
A1.2Collector Current - Continuous
IC
V5Emitter-Base Voltage
VEBO
V100Collector-Base Voltage
VCBO
V80Collector-Emitter Voltage
VCEO
Units
BCP56
ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
°C/W125Thermal Resistance, Junction to Ambient
RθJA
W
mW/°C
1
8
Total Device Dissipation
Derate above 25°C
PD
BCP56
Units
Max
Characteristic
Symbol
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
BCP56
1998 Fairchild Semiconductor Corporation
SOT-223
C
E
C
B
Pr3947_REV A
V1
IC = 500 m A, VCE = 2 V
Base-Emitter On Voltage
VBE(on)
V0.5
IC = 500 m A, IB = 50 mA
Collector-Emitter Saturation Voltage
VCE(sat)
-
250
25
40
25
IC = 5 mA, VCE = 2V
IC = 150 mA, VCE = 2V
IC = 500mA, VCE = 2 V
DC Current Gain
hFE
ON
CHARACTERISTICS
*
µA
10
VEB = 5V
Emitter Cutoff Current
IEBO
nA
uA
100
10
VCB = 30 V
VCB = 30 V, Tj= +125°C
Collector Cutoff Current
ICBO
V5
IE = 10 µA
Emitter-Base Breakdown Voltage
BVEBO
V100
IC = 100 µA
Collector-Base Breakdown Voltage
BVCBO
V80
IC = 10 mA
Collector-Emitter Breakdown Voltage
BVCEO
OFF CHARACTERISTICS
UnitsMaxMinTest ConditionsParameterSymbol
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
BCP56
Pr3947_REV A
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Definition of Terms
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Advance Information
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Obsolete
This datasheet contains the design specifications for
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