PRELIMINARY PTF 102003* GOLDMOS (R) Field Effect Transistor 120 Watts, 2110-2170 MHz Description The PTF 102003 is an internally matched, laterally double-diffused, push-pull, GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. It is rated at 120 watts output power with 11.5 dB linear gain. Nitride surface passivation and full gold metallization ensure extended lifetime and reliability. * (Channel Bandwidth 3.84 MHz, adjacent channels 5 MHz, Peak/Avg 9.0:1 at 0.01% CCD) Typical CW Output Power and Efficiency Vs Input Power * 140 48 100 40 80 32 V DD = 28 V IDQ = 1.2 A Total f = 2140 MHz 60 24 40 16 Pow er Output 20 Efficiency (%)x Power Output (Watts) 120 8 0 Typical CW Performance - Output Power at P1-dB = 120 Watts - Gain = 11.5 dB - Efficiency = 49 % 56 Efficiency Typical WCDMA Performance - Average Output Power = 15 Watts - Gain = 12.5 dB - Efficiency = 18 % * Full Gold Metallization * Integrated ESD Protection * Excellent Thermal Stability * Broadband Internal Matching * Low HCI Drift * Will Handle 10:1 VSWR at 28 V, 120 W e 0 0 2 4 6 8 10 102 Input Power (Watts) 003 Package 20250 Guaranteed Performance Two-Tone Measurements Unless otherwise indicated: VDD = 28 V, POUT = 60 W(AVG), IDQ = 1.2 A Total, f = 2.11 GHz, 2.17 GHz, Tone Spacing = 100 kHz Characteristic Symbol Min Typ Max Units Gain Gps 11.5 -- -- dB Drain Efficiency hD 33 38 -- % Intermodulation Distortion IMD -- -32 -28 dBc WCDMA Measurements Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 5 MHz Peak to Avg 9.0: 1, Pout = 15 W, f = 2.14 GHz Characteristic Symbol Min Typ Max Units ACPR -- -46 -42 dB Gain Gps 11.5 12.5 -- dB Drain Efficiency hD 13 18 -- % Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated. * Note: Specification is preliminary and subject to change. Order this product or obtain additional information from your Ericsson Sales Representative. e 1 e PRELIMINARY PTF 102003 Guaranteed Performance (cont.) Characteristic (1) Conditions Drain-Source Breakdown Voltage VGS = 0 V, IDS = 1 A Symbol Min Typ Max Units V(BR)DSS 65 -- -- Volts IDSS -- -- 1.0 A VGS(th) 3.0 -- 5.0 Volts Drain Leakage Current VDS = 28 V, VGS = 0 V Gate Threshold Voltage VDS = 10 V, ID = 150 mA Forward Transconductance VDS = 10 V, IDS = 4 A gfs -- 4.0 -- Siemens On-State Resistance Per Side VGS = 10 V, IDS = 1 A RDS(on) -- .13 -- Ohms Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage (1) VDSS 65 Volts Gate-Source Voltage (1) VGS +20 Volts Operating Junction Temperature TJ 200 C Total Device Dissipation PD Above 25C derate by 292 Watts 1.66 W/C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C) RqJC 0.6 C/W (1)per side 20 -30 Efficiency V DD = 28 V IDQ = 1.15 A Total f = 2140 MHz 25 -35 -40 ACPR Low 15 -45 Gain 10 -50 ACPR Up 5 -55 0 -60 0 8 16 Linear Gain & Drain Efficency 30 24 ACPR, Up and Low (dB) Gain (dB), Efficiency (%) WCDMA ACPR, Power Gain, and Drain Efficiency vs. Output Power 32 Output Power (Avg. Watts WCDMA) Linear Gain, Efficiency, IMD & IRL vs. Frequency 22 IRL Efficiency (%) 18 14 10 6 2 2100 Gain (dB) 2140 2160 Frequency (MHz) 2 -30 -35 -40 -45 IMD3 -50 -55 2180 2200 V DD = 28 V, IDQ = 1.2 A Total POUT = 15 W Avg Tw o-Tone Spacing = 100 kHz 2120 -5 -10 -15 -20 -25 IMD (dB), IRL (dB)x Typical Performance e PRELIMINARY PTF 102003 Typical Performance (cont.) Power Gain vs. Output Power Power Gain vs. Output Power 15 14 IDQ = 1.4 A IDQ = 1.2 A Power Gain (dB) Power Gain (dB) 14 IDQ = 1.0 A 13 IDQ = 0.8 12 11 V DD = 28 V f = 2140 MHz 10 13 IDQ = 1.4 I = 1.2 I = 1.0 12 IDQ = 0.8 VDD = 28 V f = 2140 MHz 11 10 1 10 100 1000 1 10 Average CW Output Power (Watts ) IMD vs. Output Power (PEP) IMD vs Pout (PEP) -20 V DD = 28 V, f = 2140 MHz Tw o-Tone Spacing = 100 kHz -20 -30 IDQ = 1.6 A IDQ = 1.4 A IDQ = 1.2 A -40 -50 Up Low -30 IMD (dBc) IMD (dBc) 1000 Average Output Power (Watts PEP) -10 IDQ = 1.0 A IM3 -40 IM5 -50 IM7 -60 VDD = 28 V, IDQ = 1.15 A Two-Tone IMD = 100 kHz -70 -60 -80 -70 1 10 100 0 1000 1.02 24 16 8 0 2100 IRL -15 IMD3 -25 Gain (dB) V DD = 28 V, IDQ = 1.2 A Total POUT = 120 W PEP 2120 2140 2160 2180 -35 -45 Bias Voltage (V) Efficiency (%) 150 1.03 -5 IMD (dB) & IRL (dB) x 32 100 Gate-Source Voltage vs. Case Temperature Broadband Linearity Performance 40 50 Output Power (Watts) Average Output Power (Watts PEP) Linear Gain & Drain Efficency 100 1.01 Voltage normalized to 1.0 V Series show current (A) 1.00 0.6 1.74 2.88 4.02 5.16 6.3 0.99 0.98 0.97 0.96 -55 2200 0.95 -20 Frequency (MHz) x 30 80 Case Temperature (C) 3 130 e PTF 102003 Typical Performance (cont.) Capacitance vs. Supply Voltage* 12 200 Cgs VGS = 0 V f = 1 MHz 10 8 150 6 100 Cds 4 50 Cdg (pF)x Cds and Cgs (pF) 250 2 Cdg 0 0 0 10 20 30 40 Supply Voltage (Volts) * This part is internally matched. Measurements of the finished product will not yield these results. Case Outline Specifications Package 20250 Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower 4 Specifications subject to change without notice. LP (c) 2000, 2001 Ericsson Inc. EUS/KR 1522-PTF 102003 Uen Rev. PA15 09-20-01