e
1
PRELIMINARY PTF 102003*
GOLDMOS® Field Effect Transistor
120 Watts, 21 10-2170 MHz
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102003
• Typical WCDMA Performance
- Average Output Power = 15 Watts
- Gain = 12.5 dB
- Efficiency = 18 %
(Channel Bandwidth 3.84 MHz,
adjacent channels ±5 MHz,
Peak/Avg 9.0:1 at 0.01%
CCD)
• Typical CW Performance
- Output Power at P1-dB = 120 W atts
- Gain = 11.5 dB
- Efficiency = 49 %
• Full Gold Metallization
• Integrated ESD Protection
• Excellent Thermal Stability
• Broadband Internal Matching
• Low HCI Drift
• Will Handle 10:1 VSWR at 28 V, 120 W
Description
The PTF 102003 is an internally matched, laterally double-dif-
fused, push-pull, GOLDMOS FET intended for WCDMA applica-
tions from 2110 to 2170 MHz. It is rated at 120 watts output power
with 11.5 dB linear gain. Nitride surface passivation and full gold
metallization ensure extended lifetime and reliability.
T
ypica l CW Output Powe r and
Effi ci ency Vs In p ut P o wer
0
20
40
60
80
100
120
140
0246810
Input Power (Watts)
Power Output
(Watts)
0
8
16
24
32
40
48
56
Efficiency (%) x
Efficiency
Pow er Output
VDD = 28 V
IDQ = 1.2 A Total
f = 2140 MHz
Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz Peak to Avg 9.0: 1, Pout = 15 W, f = 2.14 GHz
Characteristic Symbol Min Typ Max Units
Adjacent Channel Power Ratio ACPR — -46 -42 dB
Gain Gps 11.5 12.5 — dB
Drain Efficiency hD13 18 — %
All published data at TCASE = 25°C unless otherwise indicated.
* Note: Specification is preliminary and subject to change. Order this product or obtain additional information from your Ericsson
Sales Representative.
WCDMA Measurements
Characteristic Symbol Min Typ Max Units
Gain Gps 11.5 — — dB
Drain Efficiency hD33 38 — %
Intermodulation Distortion IMD — -32 -28 dBc
Unless otherwise indicated: VDD = 28 V, POUT = 60 W(AVG), IDQ = 1.2 A Total, f = 2.11 GHz, 2.17 GHz, Tone Spacing = 100 kHz
Two-Tone Measurements Guaranteed Performance Package 20250
2
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PRELIMINARY PTF 102003
Guaranteed Performance (cont.)
Characteristic (1) Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 1 µA V(BR)DSS 65 ——Volts
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS ——1.0 µA
Gate Threshold Voltage VDS = 10 V, ID = 150 mA VGS(th) 3.0 —5.0 Volts
Forward Transconductance VDS = 10 V, IDS = 4 A gfs —4.0 —Siemens
On-State Resistance Per Side VGS = 10 V, IDS = 1 A RDS(on) —.13 —Ohms
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage (1) VDSS 65 Volts
Gate-Source Voltage (1) VGS +20 Volts
Operating Junction Temperature TJ200 °C
Total Device Dissipation PD292 Watts
Above 25°C derate by 1.66 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RqJC 0.6 °C/W
(1)per side
Typical Performance
WCDM A ACPR, Power G ai n, an d
Dra i n Efficiency vs. Output Powe r
0
5
10
15
20
25
30
0 8 16 24 32
Outpu t Po wer (A vg. Watts WC DMA )
-60
-55
-50
-45
-40
-35
-30
Efficiency
G
ain
ACPR Up
VDD = 28 V
IDQ = 1.1 5 A T o ta l
f = 21 40 MHz
ACPR Low
ACPR, Up and Low (dB)
G
ain (dB), Efficiency (%)
2
6
10
14
18
22
2100 2120 2140 2160 2180 2200
Frequency (MHz)
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
IMD (dB), IRL (dB) x
IRL
Efficiency (%)
Gain (dB)
Line a r Ga in, Efficie ncy, IMD & IRL
vs. Fre quency
IMD3
Linear Gain & Drain Efficency
VDD = 28 V, IDQ = 1.2 A Total
POUT = 15 W Avg
Two-Tone Spaci ng = 1 00 kHz
PTF 102003
3
ePRELIMINARY
Pow e r Ga in vs. Output Powe r
10
11
12
13
14
1 10 100 1000
Av erage Outpu t Po wer (Watts PEP)
Power Gain (dB)
VDD = 28 V
f = 21 40 MHz
IDQ = 1.4
I = 1.2
I = 1.0
IDQ = 0.8
Pow e r Ga in vs. Output Powe r
10
11
12
13
14
15
1 10 100 1000
Av erage CW Ou tp ut Power (Watts )
Power Gain (dB)
VDD = 28 V
f = 2140 MHz
IDQ = 1.4 A
IDQ = 1.2 A
IDQ = 1.0 A
IDQ = 0.8
IMD vs Pout (PEP)
-80
-70
-60
-50
-40
-30
-20
050100150
O u tp u t Po wer (Watts)
IMD (dBc)
IM3
IM5
IM7
Up
Low
VDD = 28 V, IDQ = 1. 15 A
Two-Tone IMD = 100 k Hz
IMD vs. Output Pow e r (PEP)
-70
-60
-50
-40
-30
-20
-10
1 10 100 1000
Average O utpu t Power (Wat t s P EP)
IMD (dBc)
VDD = 28 V, f = 2140 MHz
Two-Tone Spacing = 100 kHz
IDQ = 1.2 A
IDQ = 1.0 A
IDQ = 1.6 A
IDQ = 1.4 A
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 30 80 130
Case T emperature (°C)
Bias Voltage (V)
0.6
1.74
2.88
4.02
5.16
6.3
Volt age n or malized to 1. 0 V
S er ies show c ur r e nt (A)
Gate-Source Voltage vs. Case Temperature
0
8
16
24
32
40
2100 2120 2140 2160 2180 2200
Frequency (MHz) x
-55
-45
-35
-25
-15
-5
IMD (dB) & IRL (dB) x
IRL
Efficiency ( %)
G
ain (dB)
Broa dband Li neari ty Pe rform a n ce
IMD3
Linear Gain & Drain Efficency
VDD = 28 V, IDQ = 1.2 A Total
POUT = 120 W PEP
Typical Performance (cont.)
PTF 102003
4
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Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
Specifications subject to change without notice.
LP
© 2000, 2001 Ericsson Inc.
EUS/KR 1522-PTF 102003 Uen Rev. PA15 09-20-01
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Case Outline Specifications
Package 20250
Ca pacita nce vs. Suppl y Vol ta ge*
0
50
100
150
200
250
010203040
Supply Voltage (Volts)
0
2
4
6
8
10
12
Cdg (pF) x
V GS = 0 V
f = 1 M Hz
Cgs
C
ds
Cdg
Cds and Cgs (pF)
Typical Performance (cont.)
* This part is internally matched. Measurements of the finished product
will not yield these results.
