PAGE . 1
March 22,2011-REV.04
BC807-16W SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE 45 V olts 300 mWatts
FEATURES
• General purpose amplifier applications
• PNP epitaxial silicon, planar design
• Collector current IC = 500mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DA T A
• Case: SOT -323, Plastic
• Termin als: Soldera ble per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Device Marking : BC807-16W : 7S
BC807-25W : 7V
BC807-40W : 7W
POWER
THERMAL CHARACTERISTICS
MECHANICAL DA TA
PARAMETER SYMBOL Value UNIT
Collector-Emitter Voltage V
CEO
-45 V
Collector-Base Voltage V
CBO
-50 V
E mitter-Bas e Voltage V
EBO
-5.0 V
Col lect or Cur r ent - Co ntinuous I
C
-500 mA
Total Power D issipation (Note 1) P
TOT
300 mW
Junction and Storage Temperature Range T
J
, T
STG
-55 to 150
o
C
PARAMETER SYMBOL Value UNIT
Thermal Resistance Juncti on to Ambient (Note 1) R
θJA
420
o
C/W
Note 1 : Transistor mounted on FR-5 board minimum pad mounting conditions.
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.004(0.10)MAX.
0.004(0.10)MIN.
0.087(2.20)
0.078(2.00)
0.006(0.15)
0.002(0.05)
0.016(0.40)
0.008(0.20)
0.044(1.10)
0.035(0.90)
PAGE . 2
March 22,2011-REV.04
BC807-16W SERIES
ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage (I
C
=-10mA, I
B
=0) V
(BR)
CEO -45 - - V
Collector-Base Breakdown Voltage (V
EB
=0V, I
C
=-10μA) V
(BR)
CBO -50 - - V
Emitter-Base Breakdown Voltage (I
E
=-1μA,Ic=0) V
(BR)
EBO -5.0 - - V
Emitte r-Base Cutoff Current (V
EB
=-5V) I
EBO
- - -100 nA
Collector-Base Cutoff Current (V
CB
=-20V,I
E
=0) T
J
=2 5
O
C
T
J
=150
O
CI
CBO
-
---100
-5.0
nA
μA
DC Current Gain
(Ic=-100mA,V
CE
=-1V)
(Ic=-500mA,V
CE
=-1V)
BC807-16W
BC807-25W
BC807-40W h
FE
100
160
250
40
-
-
-
-
250
400
600
-
-
Collector-Emitter Saturation Voltage (Ic=-500mA ,I
B
=-50mA) V
CE(SAT)
---0.7V
Base-Emitte Voltage (Ic=-500mA,V
CE
=-1.0V) V
BE(ON)
---1.2V
Collector-Base Capacitance (V
CB
=-10V,I
E
=0,f=1MHz) C
CBO
-7.0-pF
Current Gain-Bandwidth P roduct (Ic=-10mA,V
CE
=-5V,f=100MHz) f
T
100 - - MHz
PAGE . 3
March 22,2011-REV.04
BC807-16W SERIES
-0.1
-1
-10
-0.1 -1 -10 -100 -1000
IC, Collector Current (mA)
VBE(SAT) (V)
TJ = 150°C
T
J
= 25°C
Fig.1 Base-Emitter Saturation Voltage
-0.01
-0.1
-1
-0.1 -1 -10 -100 -1000
IC, Collector Current (mA)
VCE(SAT) (V)
TJ = 150°C
TJ = 25°C
Fig.2 Collector-Emitter Saturation Voltage
0
200
400
600
-0.1 -1 -10 -100 -1000
IC, Collector Current (mA)
HFE
TJ = 150°C
TJ = 25°C
TJ = 75°C
VCE = -1V
Fig.3 BC807-16W: Typical DC Current Gain
0
200
400
600
-0.1 -1 -10 -100 -1000
IC, Collector Current (mA)
HFE
TJ = 150°C
TJ = 25°C
TJ = 75°C VCE = -1V
Fig.4 BC807-25W: Typical DC Current Gain
1
10
100
-0.1 -1 -10 -100
VCB, VEB (V)
CCB, CCB (pF)
CEB
CCB
f =1MHz
TJ=25°C
Fig.6 Typical Capacitance
0
200
400
600
800
-0.1 -1 -10 -100 -1000
IC, Collector Current (mA)
HFE
TJ = 150°C
TJ = 25°C TJ = 75°C
VCE = -1V
Fig.5 BC807-40W: DC Current Gain
IC/IB = 10 IC/IB = 10
PAGE . 4
March 22,2011-REV.04
MOUNTING P AD LA YOUT
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
ORDER INFORMA TION
LEGAL ST ATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
BC807-16W SERIES