BB 833
Apr-30-19981
Silicon Tuning Diode
• Extended frequency range up to 2.5 GHz;
special design for use in TV-sat indoor units
• High capacitance ratio
VPS05176
1
2
Type Marking Pin Configuration Package
BB 833 white X 1 = C 2 = A SOD-323
Maximum Ratings
Parameter ValueSymbol Unit
VVR30Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)VRM 35
20 mAForward current IF
Operating temperature range -55 ... 150Top °C
Tst
g
-55 ... 150Storage temperature
BB 833
Apr-30-19982
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
typ. max.min.
DC characteristics
nA20Reverse current
VR = 30 V
-IR-
Reverse current
VR = 30 V, TA = 85 °C
- -IR500
AC characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 28 V, f = 1 MHz
CT
8.5
0.6
pF
10
0.9
9.3
0.75
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
12.4 --CT1/CT28 11
- 3 %-∆CT/CT
Capacitance matching
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
VR = 1 V, f = 100 MHz
rs-Ω-1.8
- nHSeries inductance Ls- 1.8
1) In-line matching. For details please refer to Application Note 047
BB 833
Apr-30-19983
Diode capacitance CT = f (VR)
f = 1MHz
10
0
EHD07121BB 833
C
V
R
T
01
10
2
10V
2
4
6
8
10
pF
12
Temperature coefficient of the diode
capacitance TCc = f (VR)
10 -1 10 0 10 1 10 2
V
VR
-5
10
-4
10
-3
10
1/°C
T
Cc
