BDW93C
BDW94B/BDW94C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMic roelectronics PREFE RRE D
SALESTYPES
■COM PLEMENTARY PNP - NPN DEVI CES
■INTEGRATED ANTIPARALL EL
COLLECTOR-EMITTER DIODE
APPLIC A TION S
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIP TION
The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is B DW94C.
Also BDW94B is a PN P t ype.
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW93C
PNP BDW94B BDW94C
VCBO Collector-Base Voltage (IE = 0) 80 100 V
VCEO Collector-Emitter Voltage (IB = 0) 80 100 V
ICCollector Current 12 A
ICM Collector Peak Current 15 A
IBBase Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25 oC80 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case 1.56 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IE = 0) for BDW94B VCB = 80 V
for BDW93C/94C VCB = 100 V
Tcase = 150 oC
for BDW94B VCB = 80 V
for BDW93C/94C VCB = 100 V
100
100
5
5
µA
µA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for BDW94B VCE = 80 V
for BDW93C/94C VCE = 100 V 1
1mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V
2mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
for BDW94B
for BDW93C/94C 80
100 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 5 A IB = 20 mA
IC = 10 A IB = 100 mA 2
3V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 5 A IB = 20 mA
IC = 10 A IB = 100 mA 2.5
4V
V
hFE∗DC Current Gain IC = 3 A VCE = 3 V
IC = 5 A VCE = 3 V
IC = 10 A VCE = 3 V
1000
750
100 20K
VF* Parallel-diode Forward
Voltage IF = 5 A
IF = 10 A 1.3
1.8 2
4V
V
hfe Small Signal Current
Gain IC = 1 A VCE = 10 V
f = 1 MHz 20
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW93C/BDW94B/BDW94C
2/6
Safe Operating Area
Collector Emitter Saturation Voltage (NPN types)
Collector Emitter Saturation Voltage (NPN types)
DC Current Gain (NP N types)
DC Transconductance (NPN types)
Collector Emitter Saturation Voltage (PNP types)
BDW93C/BDW94B/BDW94C
3/6
Saturated S wit ching Characteristics (NPN types)
Collector Emitter Saturation Voltage (PNP types)
Saturated S wit ching Characteristics (PNP types)
DC Current Gain (P NP types)
DC Transconductance (PNP types)
BDW93C/BDW94B/BDW94C
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHA NICAL D ATA
BDW93C/BDW94B/BDW94C
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BDW93C/BDW94B/BDW94C
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