TIP35 TIP35A TIP35B TIP35C TIP36 TIP36A TIP36B TIP36C NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TIP35 SYMBOL TIP36 VCBO 40 VCEO 40 VEBO IC ICM IB TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 60 80 100 60 80 100 UNITS V V 5.0 V 25 A 40 A 5.0 A PD TJ, Tstg 125 W -65 to +150 C JC 1.0 C/W ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=30V (TIP35, TIP35A, TIP36, TIP36A) ICEO VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C) MAX 1.0 UNITS mA 1.0 mA 0.7 mA 1.0 mA ICES IEBO VCE=Rated VCEO VEB=5.0V BVCEO BVCEO IC=30mA (TIP35, TIP36) IC=30mA (TIP35A, TIP36A) BVCEO BVCEO IC=30mA (TIP35B, TIP36B) IC=30mA (TIP35C, TIP36C) VCE(SAT) VCE(SAT) IC=15A, IB=1.5A IC=25A, IB=5.0A 1.8 V 4.0 V VBE(ON) VBE(ON) hFE VCE=4.0V, IC=15A VCE=4.0V, IC=25A VCE=4.0V, IC=1.5A 2.0 V 4.5 V hFE hfe VCE=4.0V, IC=15A VCE=10V, IC=1.0A, f=1.0kHz 10 fT VCE=10V, IC=1.0A, f=1.0MHz 3.0 40 V 60 V 80 V 100 V 25 100 25 MHz R2 (18-July 2013) TIP35 TIP35A TIP35B TIP35C TIP36 TIP36A TIP36B TIP36C NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R2 (18-July 2013) w w w. c e n t r a l s e m i . c o m