MURS120HE3_A/H - Vishay Semiconductors

MURS120

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Revision: 22-Mar-18 1Document Number: 88687

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Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated pellet chip junction

• Ideal for automated placement

• Ultrafast reverse recovery time

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 200 V

IFSM 40 A

trr 25 ns

VF0.71 V

TJ max. 175 °C

Package DO-214AA (SMB)

Circuit configurations Single

SMB (DO-214AA)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Device marking code MD

Maximum repetitive peak reverse voltage VRRM 200 V

Working peak reverse voltage VRWM 200 V

Maximum DC blocking voltage VDC 200 V

Maximum average forward rectified current at (fig. 1) TL = 155 °C IF(AV)

1.0 A

TL = 145 °C 2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 40 A

Operating junction and storage temperature range TJ, TSTG -65 to +175 °C

MURS120

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 2Document Number: 88687

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: tp = 300 μs, duty cycle 2 %

Note

(1) AEC-Q101 qualified

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT

Maximum instantaneous forward voltage IF = 1.0 A TJ = 25 °C VF (1) 0.875 V

TJ = 150 °C 0.71

Maximum instantaneous reverse current

at rated DC blocking voltage

TJ = 25 °C IR (1) 2.0 μA

TJ = 150 °C 50

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns

Maximum reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs,

VR = 30 V, Irr = 10 % IRM trr 35 ns

Maximum forward recovery time IF = 1.0 A, dI/dt = 100 A/μs,

recovery to 1.0 V tfr 25 ns

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Typical thermal resistance, junction to lead RJL 13 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

MURS120-E3/52T 0.096 52T 750 7" diameter plastic tape and reel

MURS120-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel

MURS120HE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel

MURS120HE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel

MURS120

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 3Document Number: 88687

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance



2.0

3.0

4.0

5.0

6.0

025 50 75 100 125 150 175

1.0

Average Forward Rectified Current (A)

Lead Temperature (°C)

1 10010

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

0.01

0.1

100

0.4 0.6 0.81.0 1.2 1.4 1.6

0.2

= 100 °C

= 125 °C

= 25 °C

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

6040200 10080

0.001

0.01

0.1

100

= 100 °C

= 175 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

0.1 1

100

1000

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

MURS120

www.vishay.com Vishay General Semiconductor

Revision: 22-Mar-18 4Document Number: 88687

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Cathode Band

SMB (DO-214AA)

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

0.180 (4.57)

0.160 (4.06)

0.012 (0.305)

0.006 (0.152)

0.008 (0.2)

0 (0)

0.220 (5.59)

0.205 (5.21)

0.060 (1.52)

0.030 (0.76)

0.096 (2.44)

0.084 (2.13)

Mounting Pad Layout

0.086 (2.18) MIN.

0.060 (1.52) MIN.

0.085 (2.159) MAX.

0.220 (5.59) REF.

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

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

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particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

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including but not limited to the warranty expressed therein.

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