PROFET® Data Sheet BTS555
Infineon Technologies AG 1 of 16 2010-June-01
Smart Highside High Current Power Switch
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green Product (RoHS compliant)
• AEC qualified
Application
• Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
IN
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
Overvoltage
protection
+ Vbb
PROFET
OUT
3 & Tab
1, 5
Load GND
Load
Output
Voltage
detection
RIS
IS
4
IIS
IL
VIS
IIN
Logic GND
Voltage
sensor
Voltage
source
Current
Sense
Logic
ESD
Temperature
sensor
Rbb
VIN
1 ) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Product Summary
Overvoltage protection Vbb(AZ) 62 V
Output clamp VON(CL) 44 V
Operating voltage Vbb(on) 5.0 ... 34 V
On-state resistance RON 2.5 mΩ
Load current (ISO) IL(ISO) 165 A
Short circuit current limitation IL(SCp) 520 A
Current sense ratio I
L : IIS 30 000
PG-TO218-5-146
5
1
Straight leads
Data Sheet BTS555
Infineon Technologies AG 2 2010-June-01
Pin Symbol Function
1 OUT
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
2 IN Input, activates the power switch in case of short to ground
3 Vbb Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
instead of this pin4).
4 IS
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
5 OUT
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (see page 4 and 5) Vbb 40 V
Supply voltage for full short circuit protection,
(EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C:
Vbb 34 V
Load current (short circuit current, see page 5) IL self-limited A
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI5) = 2 Ω, RL = 0.1 Ω, td = 200 ms,
IN, IS = open or grounded
VLoad dump6) 80 V
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC ≤ 25 °C Ptot 360 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, T
j,start = 150°C, T
C = 150°C const.,
IL = 20 A, ZL = 15 mH, 0 Ω, see diagram on page 10
EAS 3J
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
VESD 4.0 kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
IIN
IIS
+15 , -250
+15 , -250
mA
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Data Sheet BTS555
Infineon Technologies AG 3 2010-June-01
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC7) -- -- 0.35 K/W
junction - ambient (free air): RthJA -- 30 --
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 7) IL = 30 A, T
j = 25 °C:
VIN = 0, IL = 30 A, T
j = 150 °C:
RON
--
--
1.9
3.3
2.5
4.0
mΩ
IL = 120 A, T
j = 150 °C: -- -- 4.0
Vbb = 6 V8), IL = 20 A, T
j = 150 °C: RON(Static) -- 4.6 9.0
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, T
c = 85 °C 10)
IL(ISO) 128 165 -- A
Maximum load current in resistive range
(Tab to pins 1,5) VON = 1.8 V, T
c = 25 °C:
see diagram on page 13 VON = 1.8 V, T
c = 150 °C:
IL(Max)
520
360
--
--
--
-- A
Turn-on time11) IIN to 90% VOUT:
Turn-off time IIN to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
ton
toff
120
50
--
--
600
200
µs
Slew rate on 11) (10 to 30% VOUT )
RL = 1 Ω
dV/dton 0.3 0.5 0.8 V/µs
Slew rate off 11) (70 to 40% VOUT )
RL = 1 Ω
-dV/dtoff 0.3 0.7 1 V/µs
7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) not subject to production test, specified by design
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 14.
Data Sheet BTS555
Infineon Technologies AG 4 2010-June-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - 30 A T
j = 25 °C:
see description on page 10 T
j = 150 °C:
RON(inv)
--
1.9
3.3
2.5
4.0
mΩ
Nominal inverse load current (Pins 1,5 to Tab)
VON = -0.5 V, T
c = 85 °C10
IL(inv) 128 165 -- A
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
-VON -- 0.6 0.7 V
Operating Parameters
Operating voltage (VIN = 0) 12) Vbb(on) 5.0 -- 34 V
Undervoltage shutdown 13) VbIN(u) 1.5 3.0 4.5 V
Undervoltage start of charge pump
see diagram page 15
VbIN(ucp)
3.0
4.5 6.0 V
Overvoltage protection14) Tj =-40°C:
Ibb = 15 mA Tj = 25...+150°C:
VbIN(Z) 60
62
--
66
--
--
V
Standby current Tj =-40...+25°C:
IIN = 0 T
j = 150°C:
Ibb(off) --
--
15
25
25
50
µA
12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and
short circuit.
13) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
14) See also VON(CL) in circuit diagram on page 8.
Data Sheet BTS555
Infineon Technologies AG 5 2010-June-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions15)
Short circuit current limit (Tab to pins 1,5)16)
VON = 12 V, time until shutdown max. 300 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
IL(SCp) 200
200
300
320
400
480
550
620
650
A
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
td(SC)
80
-- 300 µs
Output clamp 17) IL= 40 mA:
(inductive load switch off)
-VOUT(CL) 14
17
20 V
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
VON(CL)
40
44 47 V
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
VON(SC)
--
6 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis
∆
Tjt -- 10 -- K
Reverse Battery
Reverse battery voltage 18) -Vbb -- -- 16 V
On-state resistance (Pins 1,5 to pin 3) T
j = 25 °C:
Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 kΩ T
j = 150 °C:
RON(rev) -- 2.3
3.9
3.0
4.7 mΩ
Integrated resistor in Vbb line Tj = 25 °C:
Tj = 150 °C:
Rbb 90
105
110
125
135
150
Ω
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Data Sheet BTS555
Infineon Technologies AG 6 2010-June-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max
Diagnostic Characteristics
Current sense ratio, IL = 120 A,Tj =-40°C:
static on-condition, Tj =25°C:
kILIS = IL : IIS, Tj =150°C:
VON < 1.5 V19), IL = 30 A,Tj =-40°C:
VIS <VOUT - 5 v, Tj =25°C:
VbIN > 4.0 V Tj =150°C:
(see diagram on page 12) IL = 16 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 12 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
kILIS 25 000
26 000
24 000
25 000
25 000
23 000
24 000
24 000
23 000
23 000
23 000
23 000
29 000
28 500
26 500
31 200
30 200
27 200
33 500
31 500
27 500
40 500
40 500
29 000
34 000
32 000
29 000
40 000
35 000
31 500
48 000
40 000
32 000
61 000
45 000
34 000
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation IIS,lim 6.5 -- -- mA
Current sense leakage current
IIN = 0, VIS = 0:
V
IN = 0, VIS = 0, IL ≤ 0:
IIS(LL)
IIS(LH)
--
--
--
2
0.5
--
µA
Current sense settling time20)
ts(IS)
--
-- 500 µs
Overvoltage protection Tj =-40°C:
Ibb = 15 mA Tj = 25...+150°C:
VbIS(Z) 60
62
--
66
--
--
V
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
IIN(on) -- 0.8 1.5 mA
Input current for turn-off21) IIN(off) -- -- 40 µA
19) If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20) not subject to production test, specified by design
21) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Data Sheet BTS555
Infineon Technologies AG 7 2010-June-01
Truth Table
Input
current
Output Current
Sense
Remark
level level IIS
Normal
operation
L
H
L
H
0
nominal
=IL / kilis, up to IIS=IIS,lim
Very high
load current H H IIS, lim up to VON=VON(Fold back)
IIS no longer proportional to IL
Current-
limitation H H 0 VON > VON(Fold back)
if VON>VON(SC), shutdown will occure
Short circuit to
GND
L
H
L
L
0
0
Over-
temperature
L
H
L
L
0
0
Short circuit to
Vbb
L
H
H
H
0
<nominal 22)
Open load L
H
Z23)
H
0
0
Negative output
voltage clamp
L L 0
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
22) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
23) Power Transistor "OFF", potential defined by external impedance.
Terms
PROFET
V
IN
IS
OUT
bb
VIN IIS
IIN
Vbb
Ibb
IL
VOUT
VON
2
4
3
1,5
RIS
VIS
VbIN
RIN
DS
VbIS
Two or more devices can easily be connected in
parallel to increase load current capability.
RON measurement layout (straight leads)
Sense
V force contacts Out Force
bb contacts
5.5 mm
contacts
(both out
pins parallel)
≤
Data Sheet BTS555
Infineon Technologies AG 8 2010-June-01
Input circuit (ESD protection)
IN
ZD
IN
I
Vbb
Rbb
VZ,IN
VbIN
VIN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as Vout - VIS >
5V. If you want to measure load currents up to IL(M),
RIS should be less than
ilisML
bb
KI
VV
/
5
)(
−.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs).
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
Inductive and overvoltage output clamp
+ Vbb
OUT
PROFET
VZ1
VON
DS
IS VOUT
VZG
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-17 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Overvoltage protection of logic part
+ Vbb
VOUT
IN
bb
R
Signal GND
Logic
PROFET
VZ,IS
RIS
IN
R
IS
VZ,IN
RVVZ,VIS
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Data Sheet BTS555
Infineon Technologies AG 9 2010-June-01
Reverse battery protection
Logic
IS
IN
IS
RV
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above
16 V18); recommended value: 1
RIN + 1
RIS + 1
RV =
0.1A
|Vbb| - 12V if DS is not used (or 1
RIN = 0.1A
|Vbb| - 12V if DS is
used).
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Vbb disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
PROFET
V
IN OUT
IS
bb
Vbb
VZL
Version b:
PROFET
V
IN OUT
IS
bb
Vbb
VZb
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
PROFET
V
IN OUT
IS
bb
Vbb RL
Data Sheet BTS555
Infineon Technologies AG 10 2010-June-01
Inverse load current operation
PROFET
V
IN OUT
IS
bb
Vbb
VOUT
- IL
RIS
VIS
VIN
+
-+
-
IIS
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
PROFET
V
IN OUT
IS
bb
E
E
E
EAS
bb
L
R
ELoad
L
R
L
{
Z
L
R
IS
I
IN
V
bb
i (t)
L
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= IL· L
2·RL
(Vbb + |VOUT(CL)|) ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [µH]
I
L [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
PROFET
IS
IN
IS
R
V
R
Powe
r
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1 T2
IN
Signal
Vbb
1
10
100
1000
10000
100000
1000000
1 10 100 1000
Data Sheet BTS555
Infineon Technologies AG 11 2010-June-01
Options Overview
Type BTS
555
Overtemperature protection with hysteresis X
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
X
Short circuit to GND protection
with overtemperature shutdown
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
X
Overvoltage shutdown -
Output negative voltage transient limit
to Vbb - VON(CL) X
to VOUT = -15 V typ X25)
24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Data Sheet BTS555
Infineon Technologies AG 12 2010-June-01
Characteristics
Current sense versus load current:
IIS = f(IL)
IIS [mA]
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = -40 °C
kilis
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = 25 °C
kilis
IL [A]
Current sense ratio:
KILIS = f(IL), TJ = 150 °C
kilis
IL [A]
0
1
2
3
4
5
6
7
0 50 100 150
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min
20000
25000
30000
35000
40000
45000
50000
55000
60000
65000
0 50 100 150
typ
max
min
Data Sheet BTS555
Infineon Technologies AG 13 2010-June-01
Typ. current limitation characteristic
IL = f (VON, Tj)
IL [A]
0
100
200
300
400
500
600
700
800
900
1000
0 101520
T
j
= -40°C
25°C
85°C
150°C
VON(FB)
VON>VON(SC) only for t < td(SC)
(otherwise immediate shutdown)
V
ON [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
RON = f (Vbb, Tj); IL = 30 A; VIN = 0
RON [mOhm]
0
1
2
3
4
5
6
0 5 10 15 20
static
dynamic
T
j
= 150°C
85°C
25°C
-40°C
40
Vbb [V]
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 20406080
VbIN [V]
Data Sheet BTS555
Infineon Technologies AG 14 2010-June-01
Timing diagrams
Figure 1: Switching a resistive load,
change of load current in on-condition:
IIN
t
VOUT
IL
IIS tson(IS)
tt
slc(IS)
Load 1 Load 2
soff(IS)
t
t
t
on
off
slc(IS)
90%
dV/dton
dV/dtoff
10%
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 2a: Switching motors and lamps:
IIN
t
VOUT
IIL
IIS
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page 6).
Figure 2b: Switching an inductive load:
IIN
t
VOUT
IL
IIS
Figure 3: Short circuit:
shut down by short circuit detection, reset by IIN = 0.
IIN
IL
IL(SCp)
IIS
t
td(SC)
VOUT=0
VOUT>>0
Shut down remains latched until next reset via input.
Data Sheet BTS555
Infineon Technologies AG 15 2010-June-01
Figure 4: Overtemperature,
Reset if (IIN=low) and (Tj<Tjt)
IN
S
OUT
J
t
V
T
I
I
Figure 5: Undervoltage restart of charge pump,
overvoltage clamp
0
2
4
6
0
VOUT
VbIN(ucp)
VIN = 0
IIN = 0
VON(CL)
VbIN(u)
V
bIN(u)
dynamic, short
Undervoltage
not below
VON(CL)
Data Sheet BTS555
Infineon Technologies AG 16 2010-June-01
Package Dimensions
All dimensions in mm
PG-TO218-5-146
BTS555 E3146
1)
10.16=x4
2.54
1.1
4.9
4
2.54
20.3 ±0.2
±0.3
+0.15
4
10.8
±0.2
14.8
±0.2
15
-0.02
2
+0.1
1) Punch direction, burr max. 0.04
General tolerances ± 0.1
12.5
+0.2
0.5
0...0.1
2.5
+0.15
P-TO218-5-146-PO V01
0.5
A
B
A0.25 MCB
0.06
±0.5
14
1.7
C
Green Product
To meet the world-wide customer requirements for
environmentally friendly products and to be compliant
with government regulations the device is available as
a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads).
Revision History
Version Changes
2010-June-01 RoHS-compliant version of BTS555
Page 1, page 16: RoHS compliance
statement and Green product
feature added, package variant with
staggered leads removed
Page 2: pin marking removed.
Page 11: Options overview reduced.
2008-June-24 Package drawings updated
Revision history added
Legal disclaimer updated
Edition 2010-06-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
