PROFET(R) Data Sheet BTS555 Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Reversave * Reverse battery protection by self turn on of power MOSFET Features * Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 1) * Low ohmic inverse current operation * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection2) * Electrostatic discharge (ESD) protection * Green Product (RoHS compliant) * AEC qualified Vbb(AZ) 62 VON(CL) 44 Vbb(on) 5.0 ... 34 RON IL(ISO) IL(SCp) IL : IIS V V V 2.5 m 165 A 520 A 30 000 PG-TO218-5-146 5 1 Straight leads Application * Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab R Voltage source Voltage sensor Overvoltage Current Gate protection limit protection Charge pump Level shifter Rectifier 2 IN Logic ESD I IN Limit for unclamped ind. loads Output Voltage detection + V bb bb OUT 1, 5 IL Current Sense Load Temperature sensor IS PROFET I IS Load GND 4 VIN V IS R IS Logic GND 1 2) ) With additional external diode. Additional external diode required for energized inductive loads (see page 9). Infineon Technologies AG 1 of 16 2010-June-01 Data Sheet BTS555 Pin Symbol 1 OUT 2 IN 3 Vbb 4 IS 5 OUT Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (see page 4 and 5) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 10) Tj,start=-40C...+150C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI5) = 2 , RL = 0.1 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 15 mH, 0 , see diagram on page 10 Electrostatic discharge capability (ESD) Symbol Vbb Vbb Values 40 34 Unit V V self-limited A 80 V Tj Tstg Ptot -40 ...+150 -55 ...+150 360 C EAS 3 J 4.0 kV +15 , -250 +15 , -250 mA IL VLoad dump6) VESD W Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k Current through input pin (DC) Current through current sense status pin (DC) IIN IIS see internal circuit diagrams on page 8 and 9 3) 4) 5) 6) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.5 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Infineon Technologies AG 2 2010-June-01 Data Sheet BTS555 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC7) junction - ambient (free air): RthJA min --- Values typ max -- 0.35 30 -- Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 C: RON VIN = 0, IL = 30 A, Tj = 150 C: IL = 120 A, Tj = 150 C: Vbb = 6 IL = 20 A, Tj = 150 C: RON(Static) Nominal load current9) (Tab to pins 1,5) IL(ISO) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C 10) Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 C: IL(Max) see diagram on page 13 VON = 1.8 V, Tc = 150 C: 11 ) Turn-on time IIN to 90% VOUT: ton Turn-off time IIN to 10% VOUT: toff RL = 1 , Tj =-40...+150C dV/dton Slew rate on 11) (10 to 30% VOUT ) RL = 1 -dV/dtoff Slew rate off 11) (70 to 40% VOUT ) RL = 1 V8), Values min typ max Unit ----128 1.9 3.3 -4.6 165 2.5 4.0 4.0 9.0 -- m 520 360 120 50 ----- --600 200 0.3 0.5 0.8 V/s 0.3 0.7 1 V/s A A s 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. 9) not subject to production test, specified by design 10) T is about 105C under these conditions. J 11) See timing diagram on page 14. 8) Infineon Technologies AG 3 2010-June-01 Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 30 A Values min typ max 2.5 4.0 -- m 128 1.9 3.3 165 -- 0.6 0.7 V Vbb(on) VbIN(u) 5.0 1.5 -3.0 34 4.5 V V VbIN(ucp) VbIN(Z) 3.0 60 62 --- 4.5 -66 15 25 6.0 --25 50 V V Tj = 25 C: RON(inv) see description on page 10 Tj = 150 C: IL(inv) Nominal inverse load current (Pins 1,5 to Tab) 10 VON = -0.5 V, Tc = 85 C -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150C -- Unit A Operating Parameters Operating voltage (VIN = 0) 12) Undervoltage shutdown 13) Undervoltage start of charge pump see diagram page 15 Overvoltage protection14) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: Ibb(off) A 12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and short circuit. 13) V bIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 14) See also VON(CL) in circuit diagram on page 8. Infineon Technologies AG 4 2010-June-01 Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Protection Functions15) Short circuit current limit (Tab to pins 1,5)16) VON = 12 V, time until shutdown max. 300 s Tc =-40C: IL(SCp) Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC) min. value valid only if input "off-signal" time exceeds 30 s Output clamp 17) IL= 40 mA: -VOUT(CL) (inductive load switch off) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) (e.g. overvoltage) VON(CL) IL= 40 mA Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) Thermal overload trip temperature Tjt Thermal hysteresis Tjt Reverse Battery Reverse battery voltage 18) -Vbb On-state resistance (Pins 1,5 to pin 3) Tj = 25 C: RON(rev) Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Tj = 25 C: Tj = 150 C: Rbb Values min typ max Unit 200 200 300 320 400 480 550 620 650 A 80 -- 300 s 14 17 20 V 40 44 47 V -150 -- 6 -10 ---- V C K -- -- 16 V -- 2.3 3.9 3.0 4.7 m 90 110 135 105 125 150 15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions. 17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9. Infineon Technologies AG 5 2010-June-01 Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40C: kILIS static on-condition, Tj =25C: kILIS = IL : IIS, Tj =150C: VON < 1.5 V19), IL = 30 A,Tj =-40C: VIS <VOUT - 5 v, Tj =25C: VbIN > 4.0 V Tj =150C: (see diagram on page 12) IL = 16 A,Tj =-40C: Tj =25C: Tj =150C: IL = 12 A,Tj =-40C: Tj =25C: Tj =150C: Values min typ max Unit 25 000 26 000 24 000 25 000 25 000 23 000 24 000 24 000 23 000 23 000 23 000 23 000 29 000 28 500 26 500 31 200 30 200 27 200 33 500 31 500 27 500 40 500 40 500 29 000 34 000 32 000 29 000 40 000 35 000 31 500 48 000 40 000 32 000 61 000 45 000 34 000 IIS,lim 6.5 -- -- mA IIN = 0, VIS = 0: IIS(LL) -- -- 0.5 A VIN = 0, VIS = 0, IL 0: IIS(LH) -- 2 -- -60 62 --66 500 --- s V -- 0.8 1.5 mA -- -- 40 A IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads): Sense current saturation Current sense leakage current Current sense settling time20) Overvoltage protection Ibb = 15 mA ts(IS) Tj =-40C: VbIS(Z) Tj = 25...+150C: Input Input and operating current (see diagram page 13) IIN(on) IN grounded (VIN = 0) Input current for turn-off21) IIN(off) 19) If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 20) not subject to production test, specified by design 21) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Infineon Technologies AG 6 2010-June-01 Data Sheet BTS555 Truth Table Remark Input current Output Current Sense level level L H L H IIS 0 nominal H H IIS, lim H H 0 L H L H L H L H L L L L L H H Z23) H L 0 0 0 0 0 <nominal 22) 0 0 0 L H H H 0 0 Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current =IL / kilis, up to IIS=IIS,lim up to VON=VON(Fold back) IIS no longer proportional to IL VON > VON(Fold back) if VON>VON(SC), shutdown will occure L = "Low" Level H = "High" Level Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14) Terms RON measurement layout (straight leads) I bb 3 VbIN 5.5 mm VON Vbb IL V 2 bb IN RIN V IN I IN OUT PROFET 1,5 IS VbIS 4 DS VIS Vbb force contacts I IS V OUT Out Force Sense contacts contacts (both out pins parallel) R IS Two or more devices can easily be connected in parallel to increase load current capability. 22) 23) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance. Infineon Technologies AG 7 2010-June-01 Data Sheet BTS555 Input circuit (ESD protection) Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 s). V bb + Vbb R bb ZD V Z,IN V bIN VON IN I IN OUT Short circuit detection Logic unit V IN Inductive and overvoltage output clamp When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ). + Vbb VZ1 VON Current sense status output Vbb VZG OUT PROFET R bb V ZD DS Z,IS IS VOUT IS IIS R VIS IS VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), RIS should be less than V bb - 5V . I L ( M ) / K ilis Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -17 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT - potential the device will switch on, if diode DS is not used. Overvoltage protection of logic part + Vbb V R IN Z,IN IN V R bb Z,IS Logic PROFET IS R IS V OUT RV V Z,VIS Signal GND Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used. Infineon Technologies AG 8 2010-June-01 Data Sheet BTS555 Version b: Reverse battery protection - Vbb R bb V IN IN OUT R IN Power Transistor Logic D R IS PROFET OUT IS IS DS Vbb bb V Zb RL RV Signal GND Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Power GND Version c: Sometimes a neccessary voltage clamp is RV 1 k, RIS = 1 k nominal. Add RIN for reverse given by non inductive loads RL connected to the same battery protection in applications with Vbb above switch and eliminates the need of clamping circuit: 1 1 1 + + = 16 V18); recommended value: RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS is |Vbb| - 12V RIN |Vbb| - 12V V Vbb bb used). RL To minimize power dissipation at reverse battery OUT IN PROFET operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to IS the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV. Vbb disconnect with energized inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a: V bb V IN bb PROFET OUT IS V ZL Infineon Technologies AG 9 2010-June-01 Data Sheet BTS555 Inverse load current operation Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 Vbb V bb 1000000 - IL IN + PROFET OUT 100000 V OUT + IS - IIS V IN V IS - R IS 10000 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible! 100 10 1 1 10 100 1000 L [H] IL [A] Inductive load switch-off energy dissipation E bb Externally adjustable current limit E AS V ELoad bb i L(t) V bb IN PROFET OUT IS I IN ZL RIS L { RL EL ER If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function. Vbb Energy stored in load inductance: V bb 2 EL = 1/2*L*I L IN While demagnetizing load inductance, the energy dissipated in PROFET is Rload IN Signal with an approximate solution for RL > 0 : Infineon Technologies AG ln (1+ |V IL*RL OUT(CL)| OUT IS RV EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, IL* L EAS= (V + |VOUT(CL)|) 2*RL bb PROFET T1 Signal GND ) 10 CV T2 R IS Power GND 2010-June-01 Data Sheet BTS555 Options Overview Type BTS Overtemperature protection with hysteresis Tj >150 C, latch function24) Tj >150 C, with auto-restart on cooling Short circuit to GND protection 555 X X with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 s) X Overvoltage shutdown - Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ X X25) 24) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 25) Can be "switched off" by using a diode D (see page 8) or leaving open the current sense output. S Infineon Technologies AG 11 2010-June-01 Data Sheet BTS555 Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] Current sense ratio: KILIS = f(IL), TJ = 25 C kilis 65000 7 60000 6 55000 5 max 50000 4 45000 40000 3 min max 35000 2 typ 30000 1 25000 min 0 20000 0 50 100 150 0 50 100 150 IL [A] IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 C kilis Current sense ratio: KILIS = f(IL), TJ = 150 C kilis 65000 65000 60000 60000 55000 55000 50000 50000 45000 45000 40000 40000 max 35000 35000 typ max 30000 30000 25000 typ 25000 min min 20000 20000 0 50 100 150 0 IL [A] Infineon Technologies AG 12 50 100 150 IL [A] 2010-June-01 Data Sheet BTS555 Typ. current limitation characteristic IL = f (VON, Tj) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] IL [A] 1000 1.6 900 1.4 800 1.2 700 VON >VON(SC) only for t < t d(SC) 600 (otherwise immediate shutdown) 1.0 0.8 500 Tj = -40C 400 25C 0.6 150C 0.4 85C 300 200 0.2 100 0 0 0 VON(FB) 10 15 20 VON [V] 0 20 40 60 80 VbIN [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj); IL = 30 A; VIN = 0 RON [mOhm] 6 static 5 dynamic 4 Tj = 150C 85C 3 25C 2 -40C 1 0 0 5 10 15 40 20 Vbb [V] Infineon Technologies AG 13 2010-June-01 Data Sheet BTS555 Timing diagrams Figure 1: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% dV/dtoff VOUT t on dV/dton t off 10% IL tslc(IS) Load 1 IIS t slc(IS) IL Load 2 IIS tson(IS) t t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps: IIN IIN IL IL(SCp) VOUT td(SC) IIL IIS VOUT>>0 VOUT=0 IIS t t Shut down remains latched until next reset via input. Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6). Infineon Technologies AG 14 2010-June-01 Data Sheet BTS555 Figure 4: Overtemperature, Reset if (IIN=low) and (Tj<Tjt) I IN IS V OUT T J t Figure 5: Undervoltage restart of charge pump, overvoltage clamp VOUT VIN = 0 VON(CL) dynamic, short Undervoltage not below VbIN(u) 6 4 IIN = 0 2 V ON(CL) 0 0 VbIN(u) VbIN(ucp) Infineon Technologies AG 15 2010-June-01 Data Sheet BTS555 Package Dimensions All dimensions in mm PG-TO218-5-146 BTS555 E3146 Green Product 15 0.2 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads). 14.8 10.8 0.2 4.9 2 +0.1 -0.02 B 0.06 A 14 0.5 1.7 1) Revision History 12.5 0.3 20.3 0.2 4 4 +0.15 C Version Changes 2010-June-01 RoHS-compliant version of BTS555 Page 1, page 16: RoHS compliance statement and Green product feature added, package variant with staggered leads removed Page 2: pin marking removed. Page 11: Options overview reduced. Package drawings updated Revision history added Legal disclaimer updated 0...0.1 1.1 2.54 0.5 +0.15 0.5 +0.2 0.25 M A B C 2.5 2008-June-24 4 x 2.54 = 10.16 1) Punch direction, burr max. 0.04 General tolerances 0.1 P-TO218-5-146-PO V01 Edition 2010-06-01 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG 16 2010-June-01