SD103A - SD103C SCHOTTKY BARRIER DIODES
FEATURES :
• For general purpose applications
• The SD103 series is a Metal-on-silicon Schottky
barrier device which is protected by a PN junction
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
• These diodes are also available in the MiniMELF case
with type designations LL103A thru LL103C.
• Pb / RoHS Free
Case: DO-35 Glass Case
Weight: approx. 0.13g
Maximum Ratings and Thermal Characteristics
C ambient temperature unless otherwise specified
Symbol Value Unit
SD103A 40
SD103B 30
SD103C 20
Single Cycle Surge 60 Hz Sine Wave IFSM 15 A
Power Dissipation (Infinite Heatsink) PD400(1) mW
Thermal Resistance Junction to Ambient Air RθJA 0.3(1) °C/mW
Junction Temperature TJ125(1) °C
Storage temperature range TS-55 to + 150 (1) °C
Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
Electrical Characteristics
(T
= 25°C unless otherwise noted)
Parameter Symbol Min Typ Max Unit
SD103A VR = 30 V - - 5
SD103B VR = 20 V - - 5
SD103C VR = 10 V - - 5
IF = 20mA - - 0.37
IF = 200mA - - 0.6
Junction Capacitance Ctot - 50 - pF
IF = IR = 50mA to 200mA
recover to 0.1IR
Page 1 of 2 Rev. 02 : March 24, 2005
V
ns
µA
-
V
Reverse Recovery Time
VF
Trr
Forward Voltage Drop
VR = 0 V, f = 1MHz
10-
Parameter
VRRM
Reverse Current IR
Test Condition
Repetitive Peak Reverse Voltage
DO - 35 Glass
(DO-204AH)
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Cathode
Mark