MUN2211T1G - ON Semiconductor

January, 2012 − Rev. 19

Publication Order Number:

MUN2111T1/D

MUN2111T1 Series,

SMUN2111T1 Series

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The

Bias Resistor Transistor (BRT) contains a single transistor with a

monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. The BRT eliminates these

individual components by integrating them into a single device. The

use of a BRT can reduce both system cost and board space. The device

is housed in the SC−59 package which is designed for low power

surface mount applications.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Moisture Sensitivity Level: 1

•ESD Rating − Human Body Model: Class 1

− Machine Model: Class B

•The SC−59 Package Can be Soldered Using Wave or Reflow

•The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector − Base Voltage VCBO 50 Vdc

Collector − Emitter Voltage VCEO 50 Vdc

Collector Current IC100 mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SC−59

CASE 318D

PLASTIC

MARKING DIAGRAM

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

EMITTER

(GROUND)

PIN 2

BASE

(INPUT)

See detailed ordering and shipping information on page 5 of

this data sheet.

ORDERING INFORMATION

See device marking table on page 5 of this data sheet.

DEVICE MARKING INFORMATION

http://onsemi.com

6x M G

6x = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

°C/W

Thermal Resistance, Junction−to−Ambient RqJA 540 (Note 1)

370 (Note 2)

°C/W

Thermal Resistance, Junction−to−Lead RqJL 264 (Note 1)

287 (Note 2)

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. FR−4 @ Minimum Pad.

2. FR−4 @ 1.0 x 1.0 inch Pad.

Figure 1. Derating Curve

350

200

150

100

−50 0 50 100 150

TA, AMBIENT TEMPERATURE (5°C)

PD, POWER DISSIPATION (mW)

RqJA= 370°C/W

250

300

LOAD

+12 V

Figure 2. Inexpensive, Unregulated Current Source

Typical Application

for PNP BRTs

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc

Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2113T1, SMUN2113T1

MUN2114T1, SMUN2114T1

MUN2115T1

MUN2116T1

MUN2130T1

MUN2131T1

MUN2132T1

MUN2133T1

MUN2134T1

MUN2136T1

MUN2137T1

MUN2140T1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.05

0.13

0.20

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO 50 − −

Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO 50 − −

Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2113T1, SMUN2113T1

MUN2114T1, SMUN2114T1

MUN2115T1

MUN2116T1

MUN2130T1

MUN2131T1

MUN2132T1

MUN2133T1

MUN2134T1

MUN2136T1

MUN2137T1

MUN2140T1

hFE

160

3.0

8.0

120

100

140

250

5.0

140

130

150

140

250

−

Collector−Emitter Saturation Voltage

(IC = 10 mA, IB = 0.3 mA)

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2113T1, SMUN2113T1

MUN2114T1, SMUN2114T1

MUN2115T1

MUN2130T1

MUN2136T1

MUN2137T1

(IC = 10 mA, IB = 5.0 mA)

MUN2131T1

(IC = 10 mA, IB = 1.0 mA)

MUN2116T1

MUN2132T1

MUN2133T1

MUN2134T1

MUN2140T1

VCE(sat)

−

0.25

Vdc

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic UnitMaxTypMinSymbol

ON CHARACTERISTICS (Note 3)

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2114T1, SMUN2114T1

MUN2115T1

MUN2116T1

MUN2130T1

MUN2131T1

MUN2132T1

MUN2133T1

MUN2134T1

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

MUN2113T1

MUN2140T1

(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)

MUN2136T1

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

MUN2137T1

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2113T1, SMUN2113T1

MUN2114T1

MUN2133T1

MUN2134T1

MUN2136T1

MUN2137T1

(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)

MUN2130T1

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

MUN2115T1

MUN2116T1

MUN2131T1

MUN2132T1

MUN2140T1

VOH

4.9

−

Vdc

Input Resistor

MUN2111T1, SMUN2111T1

MUN2112T1, SMUN2112T1

MUN2113T1, SMUN2113T1

MUN2114T1

MUN2115T1

MUN2116T1

MUN2130T1

MUN2131T1

MUN2132T1

MUN2133T1

MUN2134T1

MUN2136T1

MUN2137T1

MUN2140T1

7.0

15.4

32.9

7.0

3.3

0.7

1.5

3.3

15.4

32.9

4.7

1.0

2.2

4.7

100

28.6

61.1

6.1

1.3

2.9

6.1

28.6

130

61.1

Resistor Ratio

MUN2111T1/MUN2112T1/MUN2113T1/SMUN2111T1/

SMUN2112T1/SMUN2113T1/MUN2136T1

MUN2114T1, SMUN2114T1

MUN2115T1/MUN2116T1/MUN2140T1

MUN2130T1/MUN2131T1/MUN2132T1

MUN2133T1

MUN2134T1

MUN2137T1

R1/R2

0.8

0.17

−

0.8

0.055

0.38

1.7

1.0

0.21

−

1.0

0.1

0.47

2.1

1.2

0.25

−

1.2

0.185

0.56

2.6

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

DEVICE MARKING AND RESISTOR VALUES

Device Package Marking R1 (K) R2 (K) Shipping†

MUN2111T1 SC−59 6A 10 10

3,000 / Tape & Reel

MUN2111T1G, SMUN2111T1G SC−59

(Pb−Free)

6A 10 10

MUN2111T3G, SMUN2111T3G SC−59

(Pb−Free)

6A 10 10 10,000 / Tape & Reel

MUN2112T1 SC−59 6B 22 22

3,000 / Tape & Reel

MUN2112T1G, SMUN2112T1G SC−59

(Pb−Free)

6B 22 22

MUN2113T1 SC−59 6C 47 47

MUN2113T1G, SMUN2113T1G SC−59

(Pb−Free)

6C 47 47

MUN2114T1 SC−59 6D 10 47

MUN2114T1G, SMUN2114T1G SC−59

(Pb−Free)

6D 10 47

MUN2115T1 (Note 4) SC−59 6E 10 ∞

MUN2115T1G (Note 4) SC−59

(Pb−Free)

6E 10 ∞

MUN2116T1 (Note 4) SC−59 6F 4.7 ∞

MUN2116T1G (Note 4) SC−59

(Pb−Free)

6F 4.7 ∞

MUN2130T1 (Note 4) SC−59 6G 1.0 1.0

MUN2130T1G (Note 4) SC−59

(Pb−Free)

6G 1.0 1.0

MUN2131T1 (Note 4) SC−59 6H 2.2 2.2

MUN2131T1G (Note 4) SC−59

(Pb−Free)

6H 2.2 2.2

MUN2132T1 (Note 4) SC−59 6J 4.7 4.7

MUN2132T1G (Note 4) SC−59

(Pb−Free)

6J 4.7 4.7

MUN2133T1 (Note 4) SC−59 6K 4.7 47

MUN2133T1G (Note 4) SC−59

(Pb−Free)

6K 4.7 47

MUN2134T1 (Note 4) SC−59 6L 22 47

MUN2134T1G (Note 4) SC−59

(Pb−Free)

6L 22 47

MUN2136T1 SC−59 6N 100 100

MUN2136T1G SC−59

(Pb−Free)

6N 100 100

MUN2137T1 SC−59 6P 47 22

MUN2137T1G SC−59

(Pb−Free)

6P 47 22

MUN2140T1 (Note 4) SC−59 6T 47 ∞

MUN2140T1G (Note 4) SC−59

(Pb−Free)

6T 47 ∞

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

4. New resistor combinations. Updated curves to follow in subsequent data sheets.

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1, SMUN2111T1

IC, COLLECTOR CURRENT (mA)

100

0.1

0.01

0.001

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN

Figure 3. VCE(sat) vs. IC

TA=−25°C

25°C

12345678 910

Figure 4. DC Current Gain

Figure 5. Output Capacitance Figure 6. Output Current vs. Input Voltage

Figure 7. Input Voltage vs. Output Current

0.01

0.1

0406080

1000

1 10 100

IC, COLLECTOR CURRENT (mA)

100

IC, COLLECTOR CURRENT (mA)

0.1

100

10 20 30 40 50

TA=−25°C

75°C

50010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

TA=−2°5C 25°C

75°C

25°C

VCE = 10 V

VO = 5 V

Vin, INPUT VOLTAGE (VOLTS)

f = 1 MHz

lE = 0 V

TA = 25°C

−25°C

VCE(sat), MAXIMUM COLLECTOR VOLTAGE

(VOLTS)

Cob, CAPACITANCE (pF)

TA=75°C

IC/IB = 10

25°C

VO = 0.2 V

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1, SMUN2112T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Cob, CAPACITANCE (pF)

hFE, DC CURRENT GAIN

VCE(sat), MAXIMUM COLLECTOR VOLTAGE

(VOLTS)

TA=−25°C

Figure 8. VCE(sat) vs. ICFigure 9. DC Current Gain

1000

IC, COLLECTOR CURRENT (mA)

100

110

TA=75°C

Figure 10. Output Capacitance

IC, COLLECTOR CURRENT (mA)

010 2030

75°C

100

0.1 40 50

Figure 11. Output Current vs. Input Voltage

100

0.1

0.01

0.001 01234

Vin, INPUT VOLTAGE (VOLTS)

25°C

5678910

Figure 12. Input Voltage vs. Output Current

0.01

0.1

IC, COLLECTOR CURRENT (mA)

020 6080

75°C

25°C

TA=−25°C

010203040

VR, REVERSE BIAS VOLTAGE (VOLTS)

25°C

VCE = 10 V

IC/IB = 10

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

25°C

75°C

−25°C

TA=−25°C

VO = 0.2 V

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1, SMUN2113T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Cob, CAPACITANCE (pF)

hFE, DC CURRENT GAIN

25°C

Figure 13. VCE(sat) vs. IC

1000

100

101 10 100

IC, COLLECTOR CURRENT (mA)

Figure 14. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.1

0.01 010203040

Figure 15. Output Capacitance Figure 16. Output Current vs. Input Voltage

100

0.1

0.01

0.001010

Vin, INPUT VOLTAGE (VOLTS)

010203040

0.8

0.6

0.4

0.2

VR, REVERSE BIAS VOLTAGE (VOLTS)

1234 5 6 78 9

Figure 17. Input Voltage vs. Output Current

100

0.1 0 10 203040

IC, COLLECTOR CURRENT (mA)

TA=−25°C

75°C

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

TA=75°C

VO = 0.2 V

TA=75°C

25°C

−25°C

25°C

−25°C

IC/IB=10

25°C

75°C

TA=−25°C

VCE(sat), MAXIMUM COLLECTOR VOLTAGE

(VOLTS)

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1, SMUN2114T1

Vin, INPUT VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Cob, CAPACITANCE (pF) VCE(sat), MAXIMUM COLLECTOR VOLTAGE

(VOLTS)

0.1 01020304050

100

10246810

4.5

3.5

2.5

1.5

0.5

002468101520253035404550

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 18. VCE(sat) vs. IC

IC, COLLECTOR CURRENT (mA)

020406080

Figure 19. DC Current Gain

Figure 20. Output Capacitance Figure 21. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

Figure 22. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

0.1

0.01

0.00

f = 1 MHz

lE = 0 V

TA = 25°C

TA=−25°C

25°C

TA=75°C25°C

VO = 5 V

VO = 0.2 V

TA=−25°C

25°C

75°C

IC/IB=10

110

IC, COLLECTOR CURRENT (mA)

−25°C

25°C

TA=75°C

VCE = 10 V

180

160

140

120

100

02 4 6 8 15 20 40 50 60 70 80 90 100

75°C

−25°C

hFE, DC CURRENT GAIN

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1

Figure 23. VCE(sat) vs. IC

75°C

IC/IB =10

0.1

0.01

155020

IC, COLLECTOR CURRENT (mA)

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)

25 35

−25°C

25°C

Figure 24. DC Current Gain

IC/IB = 10

1000

100

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

75°C

−25°C

25°C

Figure 25. Output Capacitance

VR, REVERSE BIAS VOLTAGE (V)

Cob, CAPACITANCE (pF)

10 55504030

453525155

f = 1 MHz

IE = 0 A

TA = 25°C

Figure 26. Output Current vs. Input Voltage

100

246

0.01

Vin, INPUT VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

VO = 5 V

75°C

TA = 25°C

−25°C

1357

Figure 27. Input Voltage vs. Output Current

VO = 0.2 V

10 20 25

0.1

IC, COLLECTOR CURRENT (mA)

TA = −25°C

75°C

25°C

515

Vin, INPUT VOLTAGE (VOLTS)

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2133T1

75°C

25°C

−25°C

Figure 28. VCE(sat) versus ICFigure 29. DC Current Gain

Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 32. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

0.1

504020

IC, COLLECTOR CURRENT (mA)

100101

100

0.001

1000

VCE(sat), COLLECTOR VOLTAGE (VOLTS)

hFE, DC CURRENT GAIN

45 50403020100

Cob, CAPACITANCE (pF)

8100

6543210

0.001

IC, COLLECTOR CURRENT (mA)

10987

3020100

0.1

40 50

Vin, INPUT VOLTAGE (VOLTS)

75°C

25°C

TA = −25°C

75°C

25°C

TA = −25°C

75°C25°C

TA = −25°C

0.01

3525155

0.01

0.1

IC/IB = 10 VCE = 10 V

f = 1 MHz

lE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1

75°C

25°C

−25°C

Figure 33. Maximum Collector Voltage vs.

Collector Current

Figure 34. DC Current Gain

Figure 35. Output Capacitance Figure 36. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 37. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

0.1

76543210

IC, COLLECTOR CURRENT (mA)

100101

100

0.01

1000

VCE(sat), MAXIMUM COLLECTOR

VOLTAGE (VOLTS)

hFE, DC CURRENT GAIN

1.2

0.6

6050403020100

Cob, CAPACITANCE (pF)

0.2

0.4

0.8

1.0

100

6543210

0.1

IC, COLLECTOR CURRENT (mA)

10987

100

121086420

181614 20

Vin, INPUT VOLTAGE (VOLTS)

IC/IB = 10

75°C

25°C

TA = −25°C

VCE = 10 V

75°C

25°C

TA = −25°C

VO = 5 V

VO = 0.2 V

75°C

25°CTA = −25°C

f = 1 MHz

IE = 0 V

TA = 25°C

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1

Figure 38. Maximum Collector Voltage vs.

Collector Current

Figure 39. DC Current Gain

Figure 40. Output Capacitance Figure 41. Output Current vs. Input Voltage

Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 42. Input Voltage vs. Output Current

IC, COLLECTOR CURRENT (mA)

0.1

35302520151050

IC, COLLECTOR CURRENT (mA)

100101

100

0.01

1000

VCE(sat), MAXIMUM COLLECTOR

VOLTAGE (VOLTS)

hFE, DC CURRENT GAIN

1.4

0.6

6050403020100

Cob, CAPACITANCE (pF)

0.2

0.4

0.8

1.0

100

6543210

0.001

IC, COLLECTOR CURRENT (mA)

11987

100

151050

20 25

Vin, INPUT VOLTAGE (VOLTS)

504540

0.1

0.01

1.2

f = 1 MHz

IE = 0 V

TA = 25°C

75°C

25°C

TA = −25°C

VO = 5 V

75°C

25°C

TA = −25°C

VO = 0.2 V

75°C

25°C

TA = −25°C

IC/IB = 10

VCE = 10 V

75°C

25°C

TA = −25°C

MUN2111T1 Series, SMUN2111T1 Series

http://onsemi.com

PACKAGE DIMENSIONS

SC−59

CASE 318D−04

ISSUE G

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

2.4

0.094

0.95

0.037

0.95

0.037

1.0

0.039

0.8

0.031 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

HEDIM

MIN NOM MAX MIN

MILLIMETERS

1.00 1.15 1.30 0.039

INCHES

A1 0.01 0.06 0.10 0.001

b0.35 0.43 0.50 0.014

c0.09 0.14 0.18 0.003

D2.70 2.90 3.10 0.106

E1.30 1.50 1.70 0.051

e1.70 1.90 2.10 0.067

L0.20 0.40 0.60 0.008

2.50 2.80 3.00 0.099

0.045 0.051

0.002 0.004

0.017 0.020

0.005 0.007

0.114 0.122

0.059 0.067

0.075 0.083

0.016 0.024

0.110 0.118

NOM MAX

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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